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YS/T 1768-2025 English PDF

Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusPDF
YS/T 1768-2025EnglishRFQ ASK 3 days [Need to translate] Determination of Impurities in the Surface of Graphite Products Used in Polysilicon Production - Inductively-Coupled Plasma Spectrometric Method Valid YS/T 1768-2025

Basic data

Standard ID YS/T 1768-2025 (YS/T1768-2025)
Description (Translated English) Determination of Impurities in the Surface of Graphite Products Used in Polysilicon Production - Inductively-Coupled Plasma Spectrometric Method
Sector / Industry Nonferrous Metallurgy Industry Standard (Recommended)
Classification of Chinese Standard H17
Classification of International Standard 77.04
Date of Issue 2025-04-10
Date of Implementation 2025-11-01
Issuing agency(ies) Ministry of Industry and Information Technology
Summary This standard specifies the inductively coupled plasma atomic emission spectrometry (ICP-AES) method for determining the content of elements such as sodium, magnesium, aluminum, potassium, calcium, chromium, iron, nickel, copper, zinc, arsenic, lead, manganese, boron, and phosphorus on the surface of graphite products used in polycrystalline silicon production. This document applies to the determination of the content of surface impurity elements in graphite products used in polycrystalline silicon production.

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