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YS/T 1167-2016 English PDF

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YS/T 1167-2016: Monocrystalline silicon etched wafers
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YS/T 1167-2016English349 Add to Cart 3 days [Need to translate] Monocrystalline silicon etched wafers   YS/T 1167-2016

PDF similar to YS/T 1167-2016


Standard similar to YS/T 1167-2016

GB/T 12963   GB/T 29055   GB/T 25074   YS/T 1511   YS/T 1512.1   YS/T 1510   

Basic data

Standard ID YS/T 1167-2016 (YS/T1167-2016)
Description (Translated English) Monocrystalline silicon etched wafers
Sector / Industry Nonferrous Metallurgy Industry Standard (Recommended)
Classification of Chinese Standard H82
Classification of International Standard 29.045
Word Count Estimation 10,149
Date of Issue 2016-07-11
Date of Implementation 2017-01-01
Regulation (derived from) Notice of the Ministry of Industry and Information Technology (2016 No. 37)
Issuing agency(ies) Ministry of Industry and Information Technology
Summary This standard specifies the grades and classifications, requirements, test methods, inspection rules, and signs, packaging, transportation, storage, quality certificates and order forms (or contracts) of silicon single crystal corrosion tablets.

YS/T 1167-2016: Monocrystalline silicon etched wafers

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Monocrystalline silicon etched wafers ICS 29.045 H82 People's Republic of China Nonferrous Metals Industry Standard Silicon single crystal etched sheet Released on.2016-07-11 2017-01-01 implementation Ministry of Industry and Information Technology of the People's Republic of China

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard is proposed and managed by the National Nonferrous Metals Standardization Technical Committee (SAC/TC243). This standard was drafted. Tianjin Huanou Semiconductor Materials Technology Co., Ltd., Tianjin Zhonghuan Leading Materials Technology Co., Ltd., Luoyang Hong Thai Semiconductor Co., Ltd., Yanyan Semiconductor Materials Co., Ltd., Hangzhou Haina Semiconductor Co., Ltd. The main drafters of this standard. Yu Ling, Zhang Xueyu, Jiang Jianguo, Sun Yan, Wang Feiqi, Shen Haoping. Silicon single crystal etched sheet

1 Scope

This standard specifies the grades and classifications, requirements, test methods, inspection rules and marking, packaging, transportation, storage, and Quality certificate and order form (or contract) content. This standard is applicable to chemical polishing of silicon single crystal abrasive sheets prepared by Czochralski method, suspension zone melting method (including zone melting neutron enthalpy and gas phase doping). An acid etching sheet and an alkali etching sheet (hereinafter referred to as an etching sheet) prepared by removing the surface damage layer by the etching liquid. The product is mainly used to make transistors and Semiconductor components such as flow tubes, extra-large power thyristors, and optoelectronic devices are further processed into silicon polishing sheets.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only the dated version applies to this article. Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials GB/T 1555 semiconductor single crystal orientation determination method GB/T 2828.1 Counting sampling inspection procedures Part 1 Batch-by-batch sampling plan searched by the acceptance quality limit (AQL) GB/T 6616 Semiconductor silicon wafer resistivity and silicon film sheet resistivity test method Non-contact eddy current method GB/T 6618 silicon wafer thickness and total thickness variation test method GB/T 6620 silicon wafer warpage non-contact test method GB/T 11073 Silicon wafer radial resistivity change measurement method GB/T 12962 silicon single crystal GB/T 12965 silicon single crystal cutting sheet and abrasive sheet GB/T 13387 Silicon and other electronic materials wafer reference surface length measurement method GB/T 13388 silicon wafer reference surface crystallographic orientation X-ray test method GB/T 14140 wafer diameter measurement method GB/T 14264 semiconductor material terminology GB/T 14844 semiconductor material grade representation GB/T 20503 Determination of specular reflectance and specular gloss of anodized anodized films of aluminium and aluminium alloys 20°, 45°, 60°, 85° angle direction GB/T 26067 wafer incision size test method GB/T 29505 Surface roughness measurement method for flat surfaces of silicon wafers GB/T 30453 silicon material native defect map YS/T 26 wafer edge profile inspection method YS/T 28 wafer packaging

3 Terms and definitions

The following terms and definitions as defined in GB/T 14264 and GB/T 30453 apply to this document.

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