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Database: 189760 (25 Oct 2025)
SJ 20059-1992 English PDF
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SJ 20059-1992
: Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111
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SJ 20059-1992
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Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111
SJ 20059-1992
PDF similar to SJ 20059-1992
Standard similar to SJ 20059-1992
SJ/T 11141
SJ/T 11281
GB/T 18910.2
SJ 50033/178
SJ 50033/177
SJ/T 11586
Basic data
Standard ID
SJ 20059-1992 (SJ20059-1992)
Description (Translated English)
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111
Sector / Industry
Electronics Industry Standard
Classification of Chinese Standard
L40
Word Count Estimation
10,155
Date of Issue
11/19/1992
Date of Implementation
5/1/1993
Quoted Standard
GB 4587-1984; GB 7581-1987; GJB 33-1985; GJB 128-1986
Summary
This standard specifies the detailed requirements 3DG111 high frequency low power silicon NPN transistor (hereinafter referred to as the device), the kinds of devices by GJB 33 "total discrete semiconductor devices" requirement to provide three levels of product assurance (GP, GT and GCT level).