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GB/T 8756-2018: Collection of metallographs on defects of germanium crystal
Status: Valid GB/T 8756: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 8756-2018 | English | 839 |
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Collection of metallographs on defects of germanium crystal
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GB/T 8756-2018
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| GB/T 8756-1988 | English | RFQ |
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Collection of metallographs on defects of crystalline germanium
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GB/T 8756-1988
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PDF similar to GB/T 8756-2018
Basic data | Standard ID | GB/T 8756-2018 (GB/T8756-2018) | | Description (Translated English) | Collection of metallographs on defects of germanium crystal | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H80 | | Classification of International Standard | 29.045 | | Word Count Estimation | 42,496 | | Date of Issue | 2018-12-28 | | Date of Implementation | 2019-07-01 | | Older Standard (superseded by this standard) | GB/T 8756-1988 | | Regulation (derived from) | National Standard Announcement No. 17 of 2018 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 8756-2018: Collection of metallographs on defects of germanium crystal---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Collection of metallographs on defects of germanium crystal
ICS 29.045
H80
National Standards of People's Republic of China
Replace GB/T 8756-1988
锗 crystal defect map
Published on.2018-12-28
2019-07-01 implementation
State market supervision and administration
China National Standardization Administration issued
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard replaces GB/T 8756-1988 "锗 crystal defect map". This standard is compared with GB/T 8756-1988, the main technical changes
The following is as follows.
--- Deleted 34 original defect maps, respectively, Figure 1, Figure 2, Figure 3, Figure 4, Figure 6, Figure 8, Figure 9, Figure 15, Figure 16, Figure 20,
21, 23, 24, 28, 29, 30, 32, 33, 78, 87, 88, 90, 91, 95,
Figure 96, Figure 102, Figure 106, Figure 113, Figure 114, Figure 115, Figure 116, Figure 124, Figure 125, Figure 132 (see the 1st edition of the 1988 edition)
Chapters, Chapter 2, Chapter 3);
--- Added terms and definitions (see Chapter 3);
--- Added 44 maps, respectively, Figure 1, Figure 2, Figure 3, Figure 4, Figure 6, Figure 8, Figure 9, Figure 13, Figure 14, Figure 15, Figure 16, Figure 22,
23, 24, 29, 30, 31, 33, 34, 80, 89, 90, 92, 93, 96, 97,
98, 99, 105, 106, 116, 117, 118, 119, 120, 128, 129, and 130,
Figure 131, Figure 132, Figure 133, Figure 135, Figure 141, Figure 142 (see Chapter 4);
--- Improve the characteristics and causes of various types of defects (see Chapter 4);
--- Added informative Appendix A "Crystal Defect Elimination Method", and gave a method for eliminating some crystal defects (see Appendix A);
--- Removed the "Appendix B Transmission Electron Microscopy (TEM) (Supplement)" in the original standard (see Appendix B of the 1988 edition).
This standard was proposed by the China Nonferrous Metals Industry Association.
This standard is under the jurisdiction of the National Nonferrous Metals Standardization Technical Committee (SAC/TC243).
This standard was drafted. Yunnan Linyi Xinyuan Industrial Co., Ltd., Youyan Optoelectronic New Materials Co., Ltd., Yunnan Zhongke Xinyuan
Crystal Materials Co., Ltd., Zhonghao Technology Co., Ltd., Guangdong Pioneer Materials Co., Ltd., Yunnan Dongchang Metal Processing Co., Ltd., colored
Institute of Metal Technology Economics.
The main drafters of this standard. Pu Shikun, Hui Feng, Dong Yukun, Feng Deshen, Ke Zunbin, Yin Shiping, Zhu Liu, Li Suqing.
The previous versions of the standards replaced by this standard are.
---GB/T 8756-1988.
锗 crystal defect map
1 Scope
This standard stipulates the defects caused by the preparation and processing of polycrystalline and germanium single crystals, and gives the characteristics and origin of various defects.
Because of the elimination method.
This standard is applicable to defects in the production process of zone melting ingots, tantalum single crystals, tantalum abrasive sheets and tantalum polishing sheets.
2 Normative references
The following documents are indispensable for the application of this document. For dated references, only the dated version applies to this article.
Pieces. For undated references, the latest edition (including all amendments) applies to this document.
GB/T 14264 semiconductor material terminology
3 Terms and definitions
The following terms and definitions as defined in GB/T 14264 apply to this document.
3.1
Impurity pipeline
In the ruthenium single crystal, a duct-like impurity-rich region formed along the longitudinal direction of the crystal.
4 锗 crystal defects
4.1 锗 polycrystalline
4.1.1 Oxide
4.1.1.1 Features
The crystal surface loses the silver-gray metallic luster and presents a different color surface film, as shown in Figure 1.
4.1.1.2 Cause
Oxide is due to the high temperature of the crystal or long-term exposure to the air, and the organic matter introduced during the operation at high temperatures
After decomposition, oxygen reacts with hydrazine to form.
4.1.2 Dross
4.1.2.1 Features
A thin layer of metallic luster that appears on the surface of the crystal, as shown in Figure 2.
4.1.2.2 Cause
Scum is a product of oxygen interacting with silicon in bismuth and antimony, or carbon or the like floating on the surface of the crucible melt, and the melt is solidified.
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