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GB/T 6219-1998 English PDF

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GB/T 6219-1998: Semiconductor devices Discrete devices. Part 8: Field-effect transistors. Section One. Blank detail specification for singe-gate field-effect transistors up to 5W and 1GHz

GB/T 6219: Evolution and historical versions

Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusPDF
GB/T 6219-1998English559 Add to Cart 3 days [Need to translate] Semiconductor devices Discrete devices. Part 8: Field-effect transistors. Section One. Blank detail specification for singe-gate field-effect transistors up to 5W and 1GHz   GB/T 6219-1998
GB/T 6219-1986EnglishRFQ ASK 3 days [Need to translate] Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz Obsolete GB/T 6219-1986

PDF similar to GB/T 6219-1998


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Basic data

Standard ID GB/T 6219-1998 (GB/T6219-1998)
Description (Translated English) Semiconductor devices Discrete devices. Part 8: Field-effect transistors. Section One. Blank detail specification for singe-gate field-effect transistors up to 5W and 1GHz
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard L42
Classification of International Standard 31.080.30
Word Count Estimation 16,163
Date of Issue 11/17/1998
Date of Implementation 6/1/1999
Older Standard (superseded by this standard) GB/T 6219-1986
Adopted Standard IEC 60747-8-1-1987, IDT
Issuing agency(ies) State Quality and Technical Supervision
Summary This standard specifies the development of 1GHz, the basic principles of fine specification Ocean single-gate field-effect transistor 5 W or less, to develop all the detailed specifications within this range should be consistent with the blank detail specification.

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