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GB/T 29332-2012: Semiconductor devices -- Discrete devices -- Part 9: Insulated-gate bipolar transistors (IGBT)
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Semiconductor devices -- Discrete devices -- Part 9: Insulated-gate bipolar transistors (IGBT)
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GB/T 29332-2012
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PDF similar to GB/T 29332-2012
Standard similar to GB/T 29332-2012 SJ/T 11281 GB/T 18910.2 Basic data | Standard ID | GB/T 29332-2012 (GB/T29332-2012) | | Description (Translated English) | Semiconductor devices -- Discrete devices -- Part 9: Insulated-gate bipolar transistors (IGBT) | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L42 | | Classification of International Standard | 31.080.01; 31.080.30 | | Word Count Estimation | 55,561 | | Quoted Standard | IEC 60747-1-2006; IEC 60747-2; IEC 60747-6; IEC 61340-2-1; IEC 61340-2-3; IEC 61340-3-1; IEC 61340-3-2; IEC 61340-4-10; IEC 61340-4-1; IEC 61340-4-3; IEC 61340-4-4; IEC 61340-4-5; IEC 61340-4-6; IEC 61340-4-7; IEC 61340-4-8; IEC 61340-4-9; IEC 61340-5-1; | | Adopted Standard | IEC 60747-9-2007, IDT | | Regulation (derived from) | National Standards Bulletin No. 41 of 2012 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the insulated gate bipolar transistor (IGBT) terminology, text symbols, essential ratings and characteristics and test methods, product-specific requirements. | GB/T 29332-2012: Semiconductor devices -- Discrete devices -- Part 9: Insulated-gate bipolar transistors (IGBT)
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Semiconductor devices Discrete devices Part 9. Insulated-gate bipolar transistors (IGB T)
ICS 31.080.01; 31.080.30
L42
National Standards of People's Republic of China
Semiconductor devices Discrete devices
Part 9. insulated gate bipolar transistor (IGB T)
Part 9. Insulated-gatebipolartransistors (IGB T)
(IEC 60747-9.2007, IDT)
Issued on. 2012-12-31
2013-06-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Table of Contents
Introduction Ⅴ
1 Scope 1
2 Normative references 1
3 Terms and definitions
Graphics 3.1 IGB T symbol 1
3.2 General terms 1
3.3 ratings and characteristics of voltage and current terminology 2
Other features 3.4 term ratings and characteristics of 4
4 text symbols 6
4.1 General 6
General 4.2 supplement standard 6
4.3 6 text symbols
5 Essential ratings and characteristics 7
5.1 rating (limit) 7
5.2 Features 8
6 Test Method 10
6.1 General 10
6.2 rating (limit) Test 11
6.3 Measurement 19
7 receives and reliability 34
7.1 General 34
34 7.2 Special Requirements
7.3 type test and routine test 37
Appendix A (normative) collector - emitter breakdown voltage test 39
Appendix B (normative) under specified conditions, inductive load current shut-off Test Method 41
Annex C (normative) forward biased safe operating area FBSOA 43
Annex D (normative) shell is not broken 47
References 48
1 collector - emitter voltage VCES, VCER, VCEX test circuit 11
Figure 2 gate - emitter voltage test circuit 12 ± VGES
Figure 3 collector current of the test circuit 13
Figure 4 Collector peak current test circuit 14
5 reverse bias safe operating area (RBSOA) test circuit 14
Figure 6 gate turn-off period - emitter voltage VGE and the collector current IC waveform 15
Figure 7 load short-circuit (SCSOA1), safety test pulse width circuit 16
Load short-circuit gate 8 (SCSOA1) period - emitter voltage VGE, collector current IC and the collector voltage VCE waveform 16
9 short circuit safe operating area 2 (SCSOA2) test circuit 17
10 SCSOA2 waveforms during 18
11 collector - emitter sustaining voltage VCE * sus measuring circuit 19
Running track 12 of the collector current 20
Figure 13 collector - emitter saturation voltage measuring circuit 21 VCEsat
Figure 14 gate - emitter threshold voltage of the basic measuring circuit 21
15 Collector cutoff current measuring circuit 22
Figure 16 gate leakage current measuring circuit 23
17 input capacitance measuring circuit 24
18 output capacitance measuring circuit 25
19 reverse transfer capacitance measurement circuit 26
Figure 20 gate charge measurement circuit 26
21 gate charge basic waveform 27
22 short-circuit gate resistance measuring circuit 28
Each time interval during the opening 23 and the opening of energy measurement circuit 29
Current, the voltage waveform 24 during the opening 29
25 shut off during each time interval and off the energy measurement circuit 30
Current, the voltage waveform 26 during the OFF period 30
27 small measure under current IC1 VCE varies with temperature and large current IC2 heating device under test DUT measurement circuit 31
Under 28 with small measuring current IC1 VCE case temperature Tc (external heating, i.e. when Tc = Tj) of typical variations 32
29 thermal resistance and transient thermal impedance measurement circuit (Method 2) 33
30 small measure under current IC1 VGE (th) with case temperature Tc (external heating, i.e. when Tc = Tj) of typical variations 33
Diagram 31 IC, VGE and Tc and time 34
32 high-temperature blocking test circuit 35
Figure 33 Test temperature gate bias circuit 36
Figure 34 intermittent life test circuit 36
35 cycles desired relationship with the temperature of 37 ΔTj
Figure A.1 collector - emitter breakdown voltage test circuit 39
Figure B.1 inductive load off current test circuit 41
Figure B.2 During the shutdown, the collector current IC and the collector voltage VCE waveform 41
Figure C.1 FBSOA test circuit (1) 43
Figure C.2 ΔVCE collector - emitter voltage VCE typical characteristic 44
Figure C.3 typical FBSOA 44
Figure C.4 FBSOA test circuit (Method 2) 45
Figure C.5 lock mode waveform 45
Figure C.6 lockout mode voltage characteristic 45
Table 1 Characteristics of 11 received judgment
Table 2 Durability and reliability test reception characteristic determination 35
Table 3 Minimum type test and routine test item (if applicable) 37
Foreword
"Semiconductor devices Discrete devices" national standards are expected structure as follows.
--- Part 1. General (GB/T 17573-1998, idt IEC 60747-1. 1983);
--- Part 2. Rectifier diodes (GB/T 4023-1997, eqv IEC 60747-2. 1983 and its amendments 1.1992 and amendments
Case 2.1993);
--- Part 3. Signal (including switching) and regulator diodes (GB/T 6571-1995, idt IEC 60747-3. 1985);
--- Part 4. Microwave Devices (GB/T 20516-2006, IEC 60747-4.2001, IDT);
--- Part 5-1. Optoelectronic devices - General (IEC 60747-5-1.2002);
--- Part 6. Thyristors (GB/T 15291-1994, eqv IEC 60747-6. 1983 and its amendments 1.1991);
--- Part 7. Bipolar transistors (GB/T 4587-1994, idt IEC 60747-7. 1988);
--- Part 8. Field Effect Transistor (GB/T 4586-1994, idt IEC 60747-8. 1984);
--- Part 9. Insulated Gate Bipolar Transistors (IEC 60747-9.2007);
--- Part 10. Generic specification for discrete devices and integrated circuits (GB/T 4589.1-2006, IEC 60747-10.1991, IDT);
--- Part 11. Sectional specification for discrete devices (GB/T 12560-1999, idt IEC 60747-11. 1985);
--- Part 14-1. Semiconductor sensors - General and classification (GB/T 20521-2006, IEC 60747-14-1.2000, IDT);
--- Part 15. Insulation of power semiconductor devices (IEC 60747-15.2010);
--- Part 17. Basic and reinforced insulation of magnetic and capacitive coupling (IEC /PAS60747-17.2011).
The standard is "Semiconductor devices Discrete devices" Part 9 the national standards.
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
This standard uses the translation method is equivalent to using IEC 60747-9.2007 "Semiconductor devices Discrete devices Part 9. insulated gate bipolar transistor
Transistor. "
Correspondence between the consistency of the standards of international documents and normative references of the following documents.
--- GB/T 4023-1997 discrete devices and integrated circuits of semiconductor devices - Part 2. Rectifier diodes
(Eqv IEC 60747-2. 1983 and its amendments 1.1992 and Amendment 2.1993)
--- GB/T 15291-1994 semiconductor devices Part 6. Thyristors (eqv IEC 60747-6. 1983 and its amendments 1.
1991)
--- GB/T 17573-1998 semiconductor devices - Part 1. General (idt IEC 60747-1. 1983)
This standard made the following editorial changes and corrections.
--- 3.2.5,3.2.6 and 3.2.7 define three terms, when the word "end" after the increase "(electrode)" word;
--- Junction temperature of text symbols Tvj unified Tj;
--- Gate - emitter voltage of the second subscript unified as "E";
--- "Predetermined condition", the position of the temperature conditions of unity for the column item 1;
--- (Test) device Abbreviations DUT in place to highlight the corresponding IGB T measured by the test (test) of the device;
--- 6.3.1.7, the supplemental voltage of the missing text symbols VCEXsus;
--- Increase in the following description in 6.3.6.3.
"One, yie --- small signal common emitter short-circuit input admittance;
yoe --- small signal common emitter short-circuit output admittance ";
--- 6.3.6.5,6.3.7.5 and 6.3.8.5, the supplemental measurement frequency of text symbols f;
--- 6.3.10.3 in, "| yie | »ωC1" corrected to "ωC1» | yie |", "| yos | »ωC2" corrected to "ωC2» | yoe |";
--- 30 in the figure caption "IC2" corrected to "IC1";
--- A.4, the column item 2 of the following three items listed by two column item processing.
The standard proposed by the Ministry of Industry and Information Technology of the People's Republic of China.
This standard by the National Standardization Technical Committee of the semiconductor device (SAC/TC78) centralized.
Ltd., Weihai new best Electronics Co., Ltd., Jiangsu-Hong-Technology Co., Ltd.
The main drafters of this standard. red Wei, Zhang, Chen Ziying, NIE even wave, Wang Po, Qin Yin full.
Semiconductor devices Discrete devices
Part 9. insulated gate bipolar transistor (IGB T)
1 Scope
This standard gives the terminology insulated gate bipolar transistor (IGB T), text symbols, essential ratings and characteristics and test methods yield
Product specific requirements.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
IEC 60747-1.2006 Semiconductor devices - Part 1. General (Semiconductordevices-Part 1. General)
IEC 60747-2 Semiconductor devices - Discrete devices and integrated circuits - Part 2. Rectifier diodes (Semiconductor
devices-Discretedevicesandintegratedcircuits-Part 2. Rectifierdiodes)
IEC 60747-6 Semiconductor devices Part 6. Thyristors (Semiconductordevices-Part 6. Thyristors)
IEC 61340 (all parts) static (Electrostatics)
3 Terms and Definitions
The following terms and definitions apply to this document.
Graphics 3.1 IGB T symbol
This standard graphic symbols as follows.
Note. This standard uses only N-channel graphics IGB T symbols. This standard also applies to the P-channel device, but must make the appropriate polarity.
3.2 General terms
3.2.1
Insulated Gate Bipolar Transistor insulated-gatebipolartransistor; IGB T
And a conduction channel having a PN junction, and the current flowing through the current channel and the junction voltage is applied between the gate terminal and the emitter terminal of the resulting
Field control transistor.
NOTE. applying a collector - emitter voltage, PN forward bias became.
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