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GB/T 45720-2025: Semiconductor devices - Time dependent dielectric breakdown (TDDB) test for gate dielectric films
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| GB/T 45720-2025 | English | 454 |
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Semiconductor devices - Time dependent dielectric breakdown (TDDB) test for gate dielectric films
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GB/T 45720-2025
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Basic data | Standard ID | GB/T 45720-2025 (GB/T45720-2025) | | Description (Translated English) | Semiconductor devices - Time dependent dielectric breakdown (TDDB) test for gate dielectric films | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L55 | | Classification of International Standard | 31.080.01 | | Word Count Estimation | 22,262 | | Date of Issue | 2025-05-30 | | Date of Implementation | 2025-09-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 45720-2025: Semiconductor devices - Time dependent dielectric breakdown (TDDB) test for gate dielectric films
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31.080.01
CCSL55
National Standard of the People's Republic of China
Time correlation of gate dielectric layer in semiconductor devices
Dielectric breakdown (TDDB) test
(IEC 62374.2007, IDT)
Released on 2025-05-30
2025-09-01 Implementation
State Administration for Market Regulation
The National Standardization Administration issued
Table of contents
Preface III
1 Scope 1
2 Normative references 1
3 Terms and Definitions 1
4 Test equipment 3
5 Test sample 3
5.1 General 3
5.2 Test structure (capacitor structure) 3
5.3 Area 3
6 Step 4
6.1 Overview 4
6.2 Pre-test 4
6.3 Test conditions 5
6.4 Criteria 5
7 Lifetime Estimation 7
7.1 Overview 7
7.2 Acceleration Model 8
7.3 Lifetime Estimation Step 10
8 Relationship between lifetime and gate oxide area 12
Appendix A (Informative) Supplementary determination of test conditions and data analysis 13
References 16
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents"
Drafting.
This document is equivalent to IEC 62374.2007 "Time-dependent dielectric breakdown (TDDB) test for gate dielectric layer of semiconductor devices".
This document adds a chapter on “Normative References”.
Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents.
This document was proposed by the Ministry of Industry and Information Technology of the People's Republic of China.
This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78).
This document was drafted by. The Fifth Electronic Research Institute of the Ministry of Industry and Information Technology, Jilin Huawei Electronics Co., Ltd., Anhui Changmai Intelligent Technology
Technology Co., Ltd., Institute of Semiconductors, Chinese Academy of Sciences, Guangdong Huixin Semiconductor Co., Ltd., Guizhou Zhenhua Fengguang Semiconductor Co., Ltd.
Co., Ltd., Hebei Beixin Semiconductor Technology Co., Ltd., Dongguan Sino-Gold Etching Technology Co., Ltd., SMIC Integrated Circuit Manufacturing (Shanghai) Co., Ltd.
Co., Ltd., the 13th Institute of China Electronics Technology Group Corporation, and Shenzhen Senmeixieer Technology Co., Ltd.
The main drafters of this document are. Chen Yiqiang, Lai Ping, Gao Li, Cai Ronggan, Feng Yuxiang, Wang Liwei, Dong Xianshan, Xiao Qingzhong, Chen Yuan, Chang Jiang,
Liu Yueyang, Liu Ganggang, Pei Xuan, Zhang Liangqi, Feng Junhong, Chi Lei, Xia Zijin, Liu Shiwen.
Time correlation of gate dielectric layer in semiconductor devices
Dielectric breakdown (TDDB) test
1 Scope
This document describes the time-dependent dielectric breakdown (TDDB) test method for the gate dielectric layer of semiconductor devices and the products that fail TDDB.
Life time estimation method.
2 Normative references
This document has no normative references.
3 Terms and definitions
The following terms and definitions apply to this document.
3.1
Eox
The gate oxide voltage is divided by the gate oxide thickness, see formula (1).
Note.
Eox = Vox/tox (1)
Where.
Eox---gate oxide electric field strength, in megavolts per centimeter (MV/cm);
Vox---gate oxide voltage;
tox ---gate oxide thickness.
tox should be determined by uniform, well-documented methods (physical analysis by scanning electron microscopy (SEM), transmission electron microscopy (TEM), or capacitance-voltage (CV) analysis).
It should be noted that the applied voltage is not necessarily the voltage on the gate oxide. Ultra-thin gate oxide has quantum confinement effects and gate electrode consumption.
Due to the exhaust effect, the gate oxide voltage will be lower than the applied voltage.
The method for measuring tox or the standard that specifies the measurement method is referenced in the data report.
3.2
Ig
Leakage current flowing in the gate lead of an insulated gate field effect transistor.
NOTE. Gate leakage current is usually represented by the letter “Ig”.
3.3
Ig0
The leakage current in the gate lead of the insulating gate oxide when the operating voltage is applied before the stress voltage or stress electric field is applied.
3.4
Limit current compliancecurrent
The maximum current that a voltage can drive a device.
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