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GB/T 44635-2024 English PDF

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GB/T 44635-2024: Electrostatic discharge sensitivity testing - Transmission line pulse(TLP) - Component level
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Basic data

Standard ID GB/T 44635-2024 (GB/T44635-2024)
Description (Translated English) Electrostatic discharge sensitivity testing - Transmission line pulse(TLP) - Component level
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard L56
Classification of International Standard 31.080
Word Count Estimation 22,256
Date of Issue 2024-09-29
Date of Implementation 2024-09-29
Issuing agency(ies) State Administration for Market Regulation, China National Standardization Administration

GB/T 44635-2024: Electrostatic discharge sensitivity testing - Transmission line pulse(TLP) - Component level


---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31.080 CCSL56 National Standard of the People's Republic of China Electrostatic discharge sensitivity test Transmission Line Pulse Device Level Component level (IEC 62615.2010, IDT) Released on 2024-09-29 2024-09-29 implementation State Administration for Market Regulation The National Standardization Administration issued

Table of Contents

Preface III 1 Scope 1 2 Normative references 1 3 Terms and Definitions 1 4 Test equipment 2 4.1 General 2 4.2 Oscilloscope 2 4.3 Voltage probe 2 4.4 Current probe 2 4.5 Transmission Line 2 4.6 High Voltage Power Supply 3 4.7 High voltage switch 3 4.8 Attenuator 3 4.9 Rise Time Filter 3 5 TLP waveform parameters 3 5.1 Pulse characteristics 3 5.2 Pulse Amplitude 4 5.3 Pulse Width 4 5.4 Rise time 4 5.5 Fall Time 4 5.6 Maximum peak current overshoot 5 5.7 Maximum current ringing duration 5 5.8 Maximum peak voltage overshoot 5 5.9 Maximum voltage ringing duration 5 5.10 Measurement time window 6 6 Test requirements and procedures 6 6.1 Error Correction 6 6.2 Error correction method of TLP test system 6 6.3 Verification method of TLP test system 7 6.4 TLP test procedure 7 7 Failure criteria 9 7.1 General information on failure criteria 9 7.2 Leakage Current Measurement 9 7.3 Leakage current test voltage 9 7.4 Documentation 9 Appendix A (Informative) TLP Design Guide 10 A.1 Transmission Line Cable Based Systems 10 A.2 Systems based on commercial pulse sources10 A.3 TLP Method 10 A.4 Impact of TLP test system 13 Reference 15

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents" Drafting. This document is equivalent to IEC 62615.2010 "Electrostatic discharge sensitivity test transmission line pulse device level". Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents. This document was proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This document is under the jurisdiction of the National Technical Committee for Integrated Circuit Standardization (SAC/TC599). This document was drafted by. Suzhou Test Electronic Technology Co., Ltd., Shenzhen Beice Standard Technology Service Co., Ltd., Shanghai Leimao Electronics Zi Technology Co., Ltd., China Electronics Technology Standardization Institute, Ministry of Industry and Information Technology Electronics Fifth Research Institute, Beijing Zhixin Microelectronics Technology Co., Ltd., Tianjin Advanced Technology Research Institute, China Academy of Information and Communications Technology, Guangzhou Chengzhen Electronic Technology Co., Ltd., Yangxin Technology (Shenzhen) Co., Ltd., Dongguan Vocational and Technical College, Beijing Radio Measurement and Testing Institute, Chongqing University of Posts and Telecommunications, China University of Metrology, Shanghai Metrology Testing Technology Research Institute, Jiangsu Institute of Metrology, State Grid Electric Power Research Institute Co., Ltd., Chongqing Shiyi Product Quality Testing Co., Ltd. Responsible company, Xiamen Product Quality Supervision and Inspection Institute. The main drafters of this document are. Hu Xiaojun, Cui Qiang, Xiao Qingzhong, Fang Wenxiao, Wu Jianfei, Qiao Yanbin, Chen Yixu, Hu Guangliang, Tang Haibo, Fu Jun, Zhou Yi, Li Nan, Yang Hongbo, Bian Jianyong, Liu Xingxun, Liu Ting, Li Yan, Li Jinlong, Zhou Lei, Ju Wenjing, Xiong Pu, Cheng Jianghe. Electrostatic discharge sensitivity test Transmission Line Pulse Device Level

1 Scope

This document defines a Transmission Line Pulse (TLP) test method for evaluating the voltage and current response of a semiconductor device under test, taking into account Design parameters for electrostatic discharge (ESD) human body model (HBM) protection. This document establishes a methodology for testing and reporting information related to TLP. The scope and focus of this document pertains to semiconductor devices TLP test technology. This document is not a replacement for HBM test standards (e.g. IEC 60749-26). The purpose of this document is to establish the TLP method. This document provides guidelines for correctly extracting HBMESD parameters using TLP. Standard measurements and procedures.

2 Normative references

This document has no normative references.

3 Terms and definitions

The following terms and definitions apply to this document. 3.1 Current source method currentsourcemethod The TLP method (sometimes called a 500Ω resistor) is a method that uses a 500Ω resistor in series with the device under test (DUT) and measures the voltage and current at the DUT. called constant current method). 3.2 Destructive damage Damage that causes changes in operating electrical characteristics or parameters and cannot be restored to the initial state before the stress was applied. 3.3 safe operation area safe operation area; SOA The current and voltage conditions under which a device operates normally without degradation. 3.4 Second breakdown A condition in which a negative resistance state occurs in a device due to thermal processes. NOTE. This is specified as the voltage trigger point Vt2 and current It2, which are usually observed after electrical breakdown (e.g., Vt1, It1). 3.5 Thermal instability A condition where the device is in a negative resistance state due to thermal processes. 3.6 The TLP method uses an oscilloscope to measure the incident and reflected waves of the DUT.

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