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| GB/T 4326-2025 | English | 279 |
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Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
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GB/T 4326-2025
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| GB/T 4326-2006 | English | 419 |
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Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
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GB/T 4326-2006
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| GB/T 4326-1984 | English | 519 |
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Extrinsic semiconductor single crystals--Measurement of Hall mobility and Hall coefficient
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GB/T 4326-1984
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Basic data | Standard ID | GB/T 4326-2025 (GB/T4326-2025) | | Description (Translated English) | Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H17 | | Classification of International Standard | 77.040 | | Word Count Estimation | 14,133 | | Date of Issue | 2025-10-31 | | Date of Implementation | 2026-05-01 | | Older Standard (superseded by this standard) | GB/T 4326-2006 | | Issuing agency(ies) | State Administration for Market Regulation and Standardization Administration of China | GB/T 4326-2025: Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 77.040
CCSH17
National Standards of the People's Republic of China
Replaces GB/T 4326-2006
Intrinsic semiconductor single-crystal Hall mobility and
Hall coefficient measurement method
Published on 2025-10-31
Implemented on May 1, 2026
State Administration for Market Regulation
The State Administration for Standardization issued a statement.
Foreword
This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents".
Drafting.
This document supersedes GB/T 4326-2006 "Methods for Measuring Hall Mobility and Hall Coefficient of Intrinsic Semiconductor Single Crystals" and is consistent with...
Compared with GB/T 4326-2006, apart from structural adjustments and editorial changes, the main technical changes are as follows.
a) The scope has been changed (see Chapter 1, Chapter 1 of the.2006 edition);
b) Terms and definitions have been changed (see Chapter 3, Chapter 2 of the.2006 edition);
c) The methodology has been modified (see Chapter 4, Chapter 3 of the.2006 edition);
d) The interfering factors were changed (see Chapter 5, Chapter 8 of the.2006 edition);
e) Increased experimental conditions (see Chapter 6);
f) Added reagents or materials (see Chapter 7);
g) The requirements for geometric dimensional gauges have been changed (see 8.2, 5.2 of the.2006 edition);
h) The requirements for electrode fabrication equipment have been changed (see 8.3, 5.3 of the.2006 edition);
i) The sample has been modified (see Chapter 9, Chapter 4 of the.2006 edition);
j) The experimental procedures were changed (see Chapter 10, Chapter 6 of the.2006 edition);
k) The experimental data processing was changed (see Chapter 11, Chapter 7 of the.2006 edition);
l) The precision has been changed (see Chapter 12, Chapter 9 of the.2006 edition).
Please note that some content in this document may involve patents, and the issuing organization of this document assumes no responsibility for identifying patents.
This document was jointly prepared by the National Technical Committee on Standardization of Semiconductor Equipment and Materials (SAC/TC203) and the National Technical Committee on Standardization of Nonferrous Metals.
It was jointly proposed and is under the jurisdiction of the committee (SAC/TC243).
This document was drafted by. GRINM Advanced Materials Co., Ltd., China Nonferrous Metals Technology and Economic Research Institute Co., Ltd., and China Electronics Corporation.
The 13th Research Institute of China Electronics Technology Group Corporation, the 46th Research Institute of China Electronics Technology Group Corporation, and Guangdong Pioneer Microelectronics Technology Co., Ltd.
Institute of Semiconductors, Chinese Academy of Sciences; JA Solar Technology Co., Ltd.; Daqing Yitai Semiconductor Materials Co., Ltd.; Shenzhen University.
The main drafters of this document are. Lin Quan, Wang Bo, Ma Yuanfei, Li Suqing, Wang Yang, Liu Guolong, Zhou Tiejun, Wang Yu, Huang Wenwen, Wang Jinling, and Liu Jingming.
Han Qinghui, Zhao Zhongyang, Hu Shipeng, Mo Jie, Zhu Chenyang.
This document was first published in 1984, revised for the first time in.2006, and this is the second revision.
Intrinsic semiconductor single-crystal Hall mobility and
Hall coefficient measurement method
1 Scope
This document describes a method for measuring the Hall mobility and Hall coefficient of intrinsic semiconductor single-crystal materials.
This document applies to single crystals of silicon, germanium, gallium arsenide, gallium phosphide, indium phosphide, gallium antimonide, indium antimonide, cadmium sulfide, gallium oxide, silicon carbide, and gallium nitride.
The measurement of Hall mobility and Hall coefficient of materials is also applicable to the Hall mobility of other semiconductor single-crystal materials with resistivity less than 10⁸ Ω·cm.
Measurement of rate and Hall coefficient.
2 Normative references
The contents of the following documents, through normative references within the text, constitute essential provisions of this document. Dated citations are not included.
For references to documents, only the version corresponding to that date applies to this document; for undated references, the latest version (including all amendments) applies.
This document.
GB/T 14264 Semiconductor Materials Terminology
3 Terms and Definitions
The terms and definitions defined in GB/T 14264 apply to this document.
4.Method Principles
This method utilizes the Hall effect, which states that when a solid conductor is placed in a magnetic field and a current flows through it, the charge carriers within the conductor are subjected to...
The phenomenon of the Lorentz force causing the object to deflect to one side, thereby generating a voltage (Hall voltage), is used to determine the Hall mobility and Hall coefficient.
In an intrinsic semiconductor with a single type of charge carrier, the relationship between the Hall coefficient and the basic material parameters is given by formula (1).
RH=
n×e
(1)
In the formula.
RH --- Hall coefficient, measured in cubic centimeters per coulomb (cm³/C);
γ --- Hall factor;
n --- Carrier concentration, in cubic centimeters (cm-3);
e --- electron charge, measured in coulombs (C).
The Hall factor (γ) is a proportionality factor determined by the scattering mechanism, sample temperature, band structure, and magnetic field strength. γ is usually taken as 1.
5 Interference Factors
5.1 The measuring current should not exceed 1 mA to avoid heating the sample. When current passes through the sample, the change in resistivity over time can be used as a predictor of the measurement.
The appropriateness of the measured current is determined by the method of analysis.
5.2 When measuring high-resistivity samples, leakage current on the sample surface will affect the measurement results.
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GB/T 4326-2025: Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
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