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GB/T 4326-2006 English PDF

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GB/T 4326-2006: Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
Status: Valid

GB/T 4326: Evolution and historical versions

Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusPDF
GB/T 4326-2006English419 Add to Cart 3 days [Need to translate] Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient Valid GB/T 4326-2006
GB/T 4326-1984English519 Add to Cart 4 days [Need to translate] Extrinsic semiconductor single crystals--Measurement of Hall mobility and Hall coefficient Obsolete GB/T 4326-1984

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Basic data

Standard ID GB/T 4326-2006 (GB/T4326-2006)
Description (Translated English) Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard H17
Classification of International Standard 77.040.01
Word Count Estimation 16,170
Date of Issue 2006-07-18
Date of Implementation 2006-11-01
Older Standard (superseded by this standard) GB/T 4326-1984
Adopted Standard ASTM F76, NEQ
Regulation (derived from) China National Standard Approval Announcement 2006 No.8 (Total No.95)
Issuing agency(ies) General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary This standard applies to the measurement of single crystal semiconductor material extrinsic Hall coefficient, carrier Hall mobility, resistivity and carrier concentration. Measurement methods specified in this standard only within a limited range of germanium, silicon, gallium arsenide and gallium phosphide single crystal materials laboratory side volume, but the method is also applicable to other semiconductor single crystal materials, under normal circumstances for high resistivity at room temperature of the semiconductor single crystal material 10 �� cm test.

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