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GB/T 42896-2023: Micro-electromechanical systems(MEMS) technology - Impact test method for nanostructures of silicon based MEMS
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 42896-2023 | English | 269 |
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Micro-electromechanical systems(MEMS) technology - Impact test method for nanostructures of silicon based MEMS
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GB/T 42896-2023
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Basic data | Standard ID | GB/T 42896-2023 (GB/T42896-2023) | | Description (Translated English) | Micro-electromechanical systems(MEMS) technology - Impact test method for nanostructures of silicon based MEMS | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L59 | | Classification of International Standard | 31.200 | | Word Count Estimation | 14,167 | | Date of Issue | 2023-08-06 | | Date of Implementation | 2023-12-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 42896-2023: Micro-electromechanical systems(MEMS) technology - Impact test method for nanostructures of silicon based MEMS
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31.200
CCSL59
National Standards of People's Republic of China
Microelectromechanical Systems (MEMS) Technology
Impact test method for silicon-based MEMS nanoscale structures
Published on 2023-08-06
Implemented on 2023-12-01
State Administration for Market Regulation
Released by the National Standardization Administration Committee
Table of contents
Preface III
1 Scope 1
2 Normative reference documents 1
3 Terms and Definitions 1
4 Requirements 2
5 Test method 4
Appendix A (informative) Recommended dimensions for in-situ on-chip impact testing machine 6
Appendix B (informative) In-situ on-chip thermally driven nanoscale structural impact testing machine test example 7
Foreword
This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents"
Drafting.
Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents.
This document is proposed and coordinated by the National Microelectromechanical Technology Standardization Technical Committee (SAC/TC336).
This document was drafted by. Peking University, China Machinery Productivity Promotion Center Co., Ltd., China Electronics Technology Standardization Institute, Beijing Yandong
Microelectronics Technology Co., Ltd., Ningbo Xinjian Semiconductor Co., Ltd., Shenzhen Meisi Advanced Electronics Co., Ltd., Shanghai Lingang New Area Cross-border
Data Technology Co., Ltd., Guangzhou Aosong Electronics Co., Ltd.
The main drafters of this document. Zhang Dacheng, Yang Fang, Li Genzi, Gu Feng, Liu Peng, Wang Xufeng, Li Fengyang, Gao Chengwu, Yu Zhiheng, Chen Yi, Hua Xuanqing,
Liu Ruobing, Zhang Yanxiu, Luo Shuming, Wu Bin, Zhang Qixin, Zhang Bin.
Microelectromechanical Systems (MEMS) Technology
Impact test method for silicon-based MEMS nanoscale structures
1 Scope
This document describes the requirements and tests for impact testing along the thickness direction of nanoscale membrane structures involved in silicon-based MEMS manufacturing technology.
method.
This document is suitable for testing the impact resistance of nanoscale structures manufactured using microelectronics technology under an impact load.
2 Normative reference documents
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations
For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to
this document.
GB/T 2900.28 Electrician terminology power tools
GB/T 26111 Microelectromechanical systems (MEMS) technical terminology
GB/T 36416.1 Testing machine vocabulary Part 1.Material testing machines
3 Terms and definitions
The following terms and definitions as defined in GB/T 2900.28, GB/T 26111 and GB/T 36416.1 apply to this document.
3.1
silicon processing technology siliconprocess
Silicon micromachining technology.
Note. Although silicon processes are generally divided into surface micromachining and bulk silicon micromachining, many of the technologies are the same.
[Source. GB/T 26111-2010,3.5.2]
3.2
in-situ on-chip impact testing machineinsituon-chipimpacttester
It consists of a test structure and a test device, which are integrated on the same wafer and processed using the same process flow for evaluation.
Testing machine for impact resistance of process-related micro-nano structures.
3.3
testing structure testing structure
Micro-nano structures (e.g., cantilever beams or fixed beams) specially made for measuring material properties or microstructure properties.
Note. This document refers to double-ended fixed beams.
[Source. GB/T 26111-2010, 3.7.19, modified]
3.4
testing device testingdevice
A microstructure that transmits force or displacement to the test structure and allows the force or displacement to be read out.
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