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GB/T 42191-2023: Test methods of the performances for MEMS piezoresistive pressure-sensitive device
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 42191-2023 | English | 319 |
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Test methods of the performances for MEMS piezoresistive pressure-sensitive device
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GB/T 42191-2023
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PDF similar to GB/T 42191-2023
Basic data | Standard ID | GB/T 42191-2023 (GB/T42191-2023) | | Description (Translated English) | Test methods of the performances for MEMS piezoresistive pressure-sensitive device | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L59 | | Classification of International Standard | 31.080.99 | | Word Count Estimation | 15,199 | | Date of Issue | 2023-05-23 | | Date of Implementation | 2023-09-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 42191-2023: Test methods of the performances for MEMS piezoresistive pressure-sensitive device
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31:080:99
CCSL59
National Standards of People's Republic of China
MEMS piezoresistive pressure sensitive device performance test method
Released on 2023-05-23
2023-09-01 Implementation
State Administration for Market Regulation
Released by the National Standardization Management Committee
table of contents
Preface I
1 Scope 1
2 Normative references 1
3 Terms and Definitions 1
4 Test conditions and regulations 1
4:1 Atmospheric conditions 1
4:2 Other environmental conditions 2
4:3 Test equipment 2
5 Test items and methods 2
5:1 Test item 2
5:2 Test method 2
foreword
This document is in accordance with the provisions of GB/T 1:1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules for Standardization Documents"
drafting:
Please note that some contents of this document may refer to patents: The issuing agency of this document assumes no responsibility for identifying patents:
This document is proposed and managed by the National Micro-Electro-Mechanical Technology Standardization Technical Committee (SAC/TC336):
This document is drafted by: Peking University, China Machinery Productivity Promotion Center Co:, Ltd:, Beijing Zhixin Sensing Technology Co:, Ltd:, Kunshan Kunbo
Intelligent Sensing Industry Technology Research Institute Co:, Ltd:, Xiamen Guangpu Electronics Co:, Ltd:, Jiangmen Runyu Sensor Technology Co:, Ltd:, Nanjing
Bozhilun Electronics Co:, Ltd:, Guangzhou Aosong Electronics Co:, Ltd:, East China Optoelectronics Integrated Devices Research Institute, Shenzhen Meisi Advanced Electronics Co:, Ltd:
Co:, Ltd:, Nanjing Gaohua Technology Co:, Ltd:, Institute of Microelectronics, Chinese Academy of Sciences, Hunan Guotian Electronic Technology Co:, Ltd:, Nanjing Wotian
Technology Co:, Ltd:, Guangzhou Guangdian Metrology and Testing Co:, Ltd:, Wuhan Feien Microelectronics Co:, Ltd:, Shenzhen Amperon Technology Co:, Ltd:
Co:, Ltd:, Kunshan Sensor Measurement and Control Technology Co:, Ltd:
The main drafters of this document: Zhang Wei, Gu Feng, Li Genzi, Chen Guangzhong, Li Song, Zhang Yating, Zhang Liang, Chen Liguo, Lin Ruimei, Li Shucheng, Mao Shu,
Zhang Bin, Wang Peng, Li Xiaobo, Xu Zhou, Wang Weibing, Chen Lu, Gao Feng, Ming Zhimao, Cao Wan, Chen Junjie, Wang Bing:
MEMS piezoresistive pressure sensitive device performance test method
1 Scope
This document describes the test conditions and test methods for MEMS piezoresistive pressure sensitive devices:
This document applies to MEMS piezoresistive pressure sensitive devices:
2 Normative references
The contents of the following documents constitute the essential provisions of this document through normative references in the text: Among them, dated references
For documents, only the version corresponding to the date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to
this document:
GB/T 2423:1-2008 Environmental testing for electrical and electronic products - Part 2: Test methods Test A: Low temperature
GB/T 2423:2-2008 Environmental testing for electrical and electronic products - Part 2: Test methods Test B: High temperature
GB/T 2423:5 Environmental testing - Part 2: Test methods Test Ea and guidelines: Shock
GB/T 2423:22 Environmental testing - Part 2: Test methods Test N: Temperature change
GB/T 4937:12 Mechanical and climatic test methods for semiconductor devices Part 12: Frequency sweep vibration
GB/T 26111 microelectromechanical system (MEMS) technical terms
GB/T 33922 Wafer-level test method for the performance of MEMS piezoresistive pressure-sensitive chips
3 Terms and Definitions
GB/T 26111, GB/T 33922 and the following terms and definitions apply to this document:
3:1
MEMS piezoresistive pressure sensitive chip packaged device:
4 Test conditions and regulations
4:1 Atmospheric conditions
Unless otherwise specified, all tests shall be carried out under the following atmospheric conditions:
a) Standard atmospheric conditions:
---Temperature: 15℃~35℃;
--- Relative humidity: 20%~80%;
---Atmospheric pressure: 86kPa~106kPa:
b) Standard reference atmospheric conditions:
---Temperature: 20℃;
--- Relative humidity: 65%;
--- Atmospheric pressure: 101:3kPa:
Note: The reference atmospheric conditions of this document are the atmospheric conditions for which the values measured under any other atmospheric conditions are corrected by calculation: Usually in most cases, no
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