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GB/T 36359-2018 English PDF

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GB/T 36359-2018: Semiconductor optoelectronic devices -- Blank detail specification for lower power light-emitting diodes
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GB/T 36359-2018English279 Add to Cart 3 days [Need to translate] Semiconductor optoelectronic devices -- Blank detail specification for lower power light-emitting diodes Valid GB/T 36359-2018

PDF similar to GB/T 36359-2018


Standard similar to GB/T 36359-2018

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Basic data

Standard ID GB/T 36359-2018 (GB/T36359-2018)
Description (Translated English) Semiconductor optoelectronic devices -- Blank detail specification for lower power light-emitting diodes
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard L53
Classification of International Standard 31.260
Word Count Estimation 14,130
Date of Issue 2018-06-07
Date of Implementation 2019-01-01
Regulation (derived from) National Standards Announcement No. 9 of 2018
Issuing agency(ies) State Administration for Market Regulation, China National Standardization Administration

GB/T 36359-2018: Semiconductor optoelectronic devices -- Blank detail specification for lower power light-emitting diodes


---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Semiconductor optoelectronic devices--Blank detail specification for lower power light-emitting diodes ICS 31.260 L53 National Standards of People's Republic of China Semiconductor Optoelectronic Devices Low power LED blank detail specification Published on.2018-06-07 2019-01-01 Implementation National Market Supervision Administration China National Standardization Administration released

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. Please note that some of the contents of this document may involve patents. The issuing agency of this document does not assume responsibility for identifying these patents. This standard is under the jurisdiction of the Ministry of Industry and Information Technology (Electronics) of the People's Republic of China. This standard was drafted by. China Electronics Technology Group Corporation No. 13 Research Institute, National Semiconductor Device Quality Supervision and Inspection Center, China Electronic Technology Standards Institute. The main drafters of this standard. Zhang Ruixia, Zhao Min, Huang Jie, Peng Hao, Zhao Ying, Liu Xiujuan, Zhang Chenchao, Liu Dongyue. Semiconductor Optoelectronic Devices Low power LED blank detail specification

Introduction

This blank detail specification is one of a series of blank detail specifications for semiconductor optoelectronic devices. Related documents. GB/T 2423.1-2008 Environmental testing for electric and electronic products Part 2. Test methods Test A. Low temperature GB/T 2423.3-2016 Environmental testing - Part 2. Test method test Cab. Constant damp heat test GB/T 2423.4-2008 Environmental testing for electric and electronic products Part 2. Test methods Test Db. Alternating heat (12h 12h loop) GB/T 2423.5-1995 Environmental testing for electric and electronic products Part 2. Test methods Test Ea and Guidelines. Impact GB/T 2423.10-2008 Environmental testing for electric and electronic products Part 2. Test methods Test Fc. Vibration (sine) GB/T 2423.15-2008 Environmental testing for electric and electronic products Part 2. Test methods Tests Ga and Guidelines. Steady state addition speed GB/T 2423.22-2012 Environmental tests Part 2. Test methods Test N. Temperature changes GB/T 2423.23-2013 Environmental test Part 2. Test method Test Q. Seal GB/T 2423.28-2005 Environmental testing for electric and electronic products Part 2. Test methods Test T. Soldering GB/T 2423.60-2008 Environmental testing for electric and electronic products Part 2. Test methods Test U. Terminals and overall safety Fitting strength GB/T 2424.19-2005 Environmental test for simulation of impact of environmental testing on electric and electronic products GB/T 4589.1-2006 Semiconductor Devices Part 10. General Specification for Discrete Devices and Integrated Circuits GB/T 12565-1990 Semiconductor device optoelectronic device sectional specification SJ/T 11394-2009 Semiconductor light-emitting diode test method Mechanical standardization of IEC 60191-2-DB-2012 semiconductor devices - Part 2. Dimensional specification (Mechanical standardization ofsemiconductorordevices-Part 2.Dimensions) IEC 60749-21.2011 Semiconductor device mechanical and climatic test methods. Part 21. Solderability (Semiconductor de- vices-Mechanicalandclimatictestsmethods-Part 21.Solderability) Request information The contents of the following requirements shall be included in the corresponding blanks of the provisions. Detailed specification identification. [1] Name of national standardization authority authorized to issue detailed specifications. [2] IEC Q detail specification number. [3] Revision number and standard number of general specifications and sub-standards. [4] Detailed specification of the country number, release date, and any more detailed information required by the national standards system. Device identification. [5] Main functions and models. [6] Information on typical structures (materials, major processes) and packages. If a device has several derivative products, those differences should be It is pointed out that, for example, differences in characteristics are listed in the comparison table.

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