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GB/T 36357-2018 English PDF

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GB/T 36357-2018: Technical specification for middle power light-emitting diode chips
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PDF similar to GB/T 36357-2018


Standard similar to GB/T 36357-2018

GB/T 43978   GB/T 43979   GB/T 43770   GB/T 36358   GB/T 36356   

Basic data

Standard ID GB/T 36357-2018 (GB/T36357-2018)
Description (Translated English) Technical specification for middle power light-emitting diode chips
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard L53
Classification of International Standard 31.260
Word Count Estimation 18,116
Date of Issue 2018-06-07
Date of Implementation 2019-01-01
Issuing agency(ies) State Administration for Market Regulation, China National Standardization Administration

GB/T 36357-2018: Technical specification for middle power light-emitting diode chips

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Technical specification for middle power light-emitting diode chips ICS 31.260 L53 National Standards of People's Republic of China Medium power semiconductor light-emitting diode chip specification Published on.2018-06-07 2019-01-01 implementation State market supervision and administration China National Standardization Administration issued

Content

Foreword I 1 Scope 1 2 Normative references 1 3 Requirements 1 4 Test method 3 5 Inspection rules 5 6 Packaging, transport and storage 9 Appendix A (Normative Appendix) Visual inspection of power semiconductor light-emitting diode chips 11 Appendix B (Normative Appendix) Electrostatic Discharge Sensitivity Classification and Marking for Human Body Mode and Machine Mode 14

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. Please note that some of the contents of this document may involve patents. The issuing organization of this document is not responsible for identifying these patents. This standard is under the jurisdiction of the Ministry of Industry and Information Technology (Electronics) of the People's Republic of China. This standard was drafted. China Electronics Technology Standardization Research Institute, Xiamen Sanan Optoelectronics Technology Co., Ltd., China Electronics Technology Group The thirteenth institute of the company. The main drafters of this standard. Liu Xiujuan, Zhao Ying, Zhang Ge, Cai Weizhi, Zhang Ruixia, Zhao Min, Zhang Chenchao. Medium power semiconductor light-emitting diode chip specification

1 Scope

This standard specifies the technical requirements, inspection methods and inspection rules for medium power semiconductor light-emitting diode chip products (hereinafter referred to as chips). Then, packaging, transportation and storage. This standard applies to medium power semiconductor light-emitting diode chips.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article. Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 2423.4-2008 Environmental testing of electrical and electronic products - Part 2. Test methods Test Db. alternating heat (12h) 12h cycle) GB/T 2423.15-2008 Environmental testing for electric and electronic products - Part 2. Test methods Tests Ga and guides. steady state plus speed GB/T 2423.22-2012 Environmental testing - Part 2. Test methods Test N. Temperature change GB/T 4589.1-2006 Part 10. General specification for discrete devices and integrated circuits GB/T 4937.1-2006 Methods of mechanical and climatic testing of semiconductor devices - Part 1. General SJ/T 11394-2009 Semiconductor Light Emitting Diode Test Method SJ/T 11399-2009 Semiconductor light-emitting diode chip test method IEC 60749 (all parts) Semiconductor device mechanical and climatic test methods (Semiconductor devices-Mechanical Andclimatictestmethods) Semiconductors - Mechanical and climatic test methods - Part 19. Chip shear strength (Semicon- ductordevices-Mechanicalandclimatictestmethods-Part 19.Dieshearstrength) Semiconductors - Mechanical and climatic test methods - Part 22. Bonding strength (Semiconductor devices-Mechanicalandclimatictestmethods-Part 22.Bondstrength)

3 requirements

3.1 General 3.1.1 Priority The chip shall comply with the requirements of this standard and related detailed specifications. When the requirements of this standard are inconsistent with the relevant detailed specifications, The fine specification shall prevail. 3.1.2 Reference to detailed specifications When the term "in accordance with the provisions" is used in this standard and the referenced documents are not specified, the relevant detailed specifications are used. 3.2 Materials and structures 3.2.1 Materials Semiconductor materials that enable the chip to meet the performance requirements of this standard shall be used, and the materials used shall be free from scratches under the specified test conditions.

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