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GB/T 36356-2018 English PDF

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GB/T 36356-2018: Technical specification for power light-emitting diode chips
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PDF similar to GB/T 36356-2018


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Basic data

Standard ID GB/T 36356-2018 (GB/T36356-2018)
Description (Translated English) Technical specification for power light-emitting diode chips
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard L53
Classification of International Standard 31.260
Word Count Estimation 18,117
Date of Issue 2018-06-07
Date of Implementation 2019-01-01
Regulation (derived from) National Standards Announcement No. 9 of 2018
Issuing agency(ies) State Administration for Market Regulation, China National Standardization Administration

GB/T 36356-2018: Technical specification for power light-emitting diode chips

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Technical specification for power light-emitting diode chips ICS 31.260 L53 National Standards of People's Republic of China Power semiconductor light-emitting diode chip specification Published on.2018-06-07 2019-01-01 Implementation National Market Supervision Administration China National Standardization Administration released Directory Preface I 1 Scope 1 2 Normative references 1 3 Request 1 4 Inspection Method 4 5 Inspection Rules 5 6 Packaging, Transport, and Storage 9 Appendix A (Normative) Visual Inspection of Power Semiconductor Light-Emitting Diode Chips 11 Appendix B (Normative) Electrostatic Discharge Sensitivity Classification and Marking for Human and Machine Modes 14

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. Please note that some of the contents of this document may involve patents. The issuing agency of this document does not assume responsibility for identifying these patents. This standard is under the jurisdiction of the Ministry of Industry and Information Technology (Electronics) of the People's Republic of China. This standard was drafted by. China Electronics Technology Group Corporation No. 13 Research Institute, National Semiconductor Device Quality Supervision and Inspection Center, China Electronic Technology Standardization Institute, Xiamen Sanan Optoelectronics Technology Co., Ltd. The main drafters of this standard. Zhang Ruixia, Zhao Min, Huang Jie, Zhao Ying, Liu Xiujuan, Cai Weizhi, Peng Hao, Liu Dongyue, Zhang Chenchao. Power semiconductor light-emitting diode chip specification

1 Scope

This standard specifies the technical requirements, test methods, and inspection rules for power semiconductor light-emitting diode chip products (hereinafter abbreviated as chips). Packaging, transportation and storage. This standard applies to power semiconductor light-emitting diode chips.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article Pieces. For undated references, the latest version (including all amendments) applies to this document. GB/T 2423.4-2008 Environmental testing for electric and electronic products Part 2. Test methods Test Db. Alternating heat (12h 12h loop) GB/T 2423.15-2008 Environmental testing for electric and electronic products Part 2. Test methods Tests Ga and Guidelines. Steady state addition speed GB/T 2423.22-2012 Environmental tests Part 2. Test methods Test N. Temperature changes GB/T 4589.1-2006 Semiconductor Devices Part 10. General Specification for Discrete Devices and Integrated Circuits GB/T 4937.1-2006 Semiconductor devices - Mechanical and climatic test methods - Part 1. General SJ/T 11394-2009 Semiconductor light-emitting diode test method SJ/T 11399-2009 Semiconductor light-emitting diode chip test method IEC 60749 (All Sections) Semiconductor Device Mechanical and Climatic Test Methods (Semiconductordevices-Mechanical Andclimatictestmethods) IEC 60749-19.2010 Semiconductors - Mechanical and climatic test methods - Part 19. Chip shear strength (Semicon- ductordevices-Mechanicalandclimatictestmethods-Part 19.Dieshearstrength) IEC 60749-22.2002 Semiconductors - Mechanical and climatic test methods - Part 22. Bonding strength (SEMICONDUCTOR devices-Mechanicalandclimatictestmethods-Part 22.Bondstrength)

3 requirements

3.1 General rules 3.1.1 Priority The chip should meet the requirements of this standard and related detailed specifications. When the requirements of this standard are inconsistent with the relevant detailed specifications, relevant details Fine specifications prevail. 3.1.2 Reference to Detailed Specifications When the term “as required” is used in this standard and the referenced document is not specified, the relevant detailed specifications are used.

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