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GB/T 35009-2018: Specification for serial NAND flash interface
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Specification for serial NAND flash interface
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GB/T 35009-2018
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Basic data | Standard ID | GB/T 35009-2018 (GB/T35009-2018) | | Description (Translated English) | Specification for serial NAND flash interface | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L56 | | Classification of International Standard | 31.200 | | Word Count Estimation | 30,31 | | Date of Issue | 2018-03-15 | | Date of Implementation | 2018-08-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 35009-2018: Specification for serial NAND flash interface---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Specification for serial NAND flash interface
ICS 31.200
L56
National Standards of People's Republic of China
Serial NAND Flash Memory Interface Specification
Published by.2018-03-15
2018-08-01 Implementation
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
China National Standardization Administration released
Directory
Preface III
1 Scope 1
2 Normative references 1
3 Terms and Definitions 1
4 Physical Interface 1
4.1 Terminal Function Definition 1
4.2 Data Interface Type 2
5 Storage Array Architecture 3
5.1 Storage Architecture 3
5.2 Status Register 4
5.3 Device Protection Functions 5
5.4 Device Self-destruction Function 6
6 Instruction Definition 7
6.1 Instruction Set Description 7
6.2 Instruction Set Description 8
6.3 Instruction Format Mode 19
7 Parameter Table Description 20
7.1 Parameter Header Definition 20
7.2 Parameter List Definition 20
Appendix A (Informative) Block Protection (BP) Method 25
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
Please note that some of the contents of this document may involve patents. The issuing agency of this document does not assume responsibility for identifying these patents.
This standard was proposed by the Ministry of Industry and Information Technology of the People's Republic of China.
This standard is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78).
This standard was drafted by. Beijing Zhaoyi Innovation Technology Co., Ltd., the Ministry of Industry and Information Technology Electronic Industry Standardization Institute, Shenzhen
Zhongxing Microelectronics Technology Co., Ltd., China National Aerospace Science and Technology Corporation Research Institute No. 772, Institute of Microelectronics, Tsinghua University
Research Institute, Ankai (Guangzhou) Microelectronics Technology Co., Ltd.
The main drafters of this standard. Su Zhiqiang, Liu Chao, Liu Huijuan, Gao Shuo, Luo Xiaoyu, Wu Peng, Lin Jianjing, Wu Huaqiang, Zou Tianxiang.
Serial NAND Flash Memory Interface Specification
1 Scope
This standard specifies the physical interface, memory array architecture, and instructions for serial and NAND flash memory (hereafter referred to as devices).
Meaning and parameter table descriptions, etc.
This standard applies to the design and use of serial NAND flash memory.
2 Normative references
The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article
Pieces. For undated references, the latest version (including all amendments) applies to this document.
GB/T 17574-1998 Semiconductor device integrated circuit Part 2. Digital integrated circuits
3 Terms and definitions
The terms and definitions defined in GB/T 17574-1998 and the following terms apply to this document.
3.1
Status register status register
Internal register of internal memory register.
3.2
One-time programmable one-timeprogrammable; OTP
Only one memory area can be programmed in the memory. Once this area is programmed once, it cannot be modified again.
3.3
Error correction code errorcorrectioncode;ECC
An error correction method that can improve the reliability of a flash memory.
4 physical interface
4.1 Terminal Function Definition
The definition of the device's terminal functions is shown in Table 1.
Table 1 Terminal Function Definition
Terminal input/output function definition
CS
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