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GB/T 35003-2018: Test methods for endurance and data retention of non-volatile memory
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| GB/T 35003-2018 | English | 199 |
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Test methods for endurance and data retention of non-volatile memory
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GB/T 35003-2018
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Basic data | Standard ID | GB/T 35003-2018 (GB/T35003-2018) | | Description (Translated English) | Test methods for endurance and data retention of non-volatile memory | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L56 | | Classification of International Standard | 31.200 | | Word Count Estimation | 10,192 | | Date of Issue | 2018-03-15 | | Date of Implementation | 2018-08-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 35003-2018: Test methods for endurance and data retention of non-volatile memory---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test methods for endurance and data retention of non-volatile memory
ICS 31.200
L56
National Standards of People's Republic of China
Non-volatile memory endurance and data retention test methods
Published by.2018-03-15
2018-08-01 Implementation
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
China National Standardization Administration released
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
Please note that some of the contents of this document may involve patents. Publication of this document
The agency does not assume responsibility for identifying these patents.
This standard was proposed by the Ministry of Industry and Information Technology of the People's Republic of China.
This standard is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78).
This standard was drafted by. China Electronics Standardization Institute, Shanghai Fudan Microelectronics Group Co., Ltd., China Electronics Technology
Group 58 Institute, Beijing Zhaoyi Innovation Technology Co., Ltd., Shenzhen State Microelectronics Co., Ltd., Chengdu Hua Microelectronics Division
Technology Co., Ltd.
The main drafters of this standard. Luo Xiaoyu, Dong Yi, Guo Xiaoyu, Gao Shuo, Liu Miao, Xie Xiuhua.
Non-volatile memory endurance and data retention test methods
1 Scope
This standard specifies the methods of non-volatile memory endurance and data retention testing.
This standard applies to electrically erasable programmable read-only memory (EEPROM), flash memory, and embedded memory
Integrated circuits (hereinafter referred to as devices).
2 Normative references
The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article
Pieces. For undated references, the latest version (including all amendments) applies to this document.
GB/T 17574-1998 Semiconductor device integrated circuit Part 2. Digital integrated circuits
3 Terms and definitions
The terms and definitions defined in GB/T 17574-1998 and the following terms apply to this document.
3.1
Durable endurance
The device is subjected to a number of consecutive data rewrites (program/erase cycles).
3.2
Data retention data retention
The ability of the device memory cell to retain data in a non-biased state for a specified period of time.
4 Equipment
The temperature chamber can stabilize the temperature within ±3°C of the specified temperature.
The fixture should fit into the temperature chamber and provide a reliable electrical connection.
5 procedures
5.1 General rules
Device endurance and data retention tests should be performed in accordance with the procedures specified in Table 1.
If the purpose of the data retention test is to verify the data retention of the device when it has not been subjected to endurance testing, use Procedure I. If the number
According to the purpose of keeping the test to verify the data retention ability of the device after endurance test, program II is adopted.
Table 1 Endurance and data retention test procedures
Program requirements
I Durability test and data retention test using different devices
II Device Performs Endurance Test before Data Hold Test
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