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GB/T 34971-2017: Guide for gaseous effluent handling in semiconductor industry
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 34971-2017 | English | 399 |
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Guide for gaseous effluent handling in semiconductor industry
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GB/T 34971-2017
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Basic data | Standard ID | GB/T 34971-2017 (GB/T34971-2017) | | Description (Translated English) | Guide for gaseous effluent handling in semiconductor industry | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | G86 | | Classification of International Standard | 71.040.40 | | Word Count Estimation | 20,282 | | Date of Issue | 2017-11-01 | | Date of Implementation | 2018-02-01 | | Regulation (derived from) | National Standard Announcement 2017 No. 29 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | GB/T 34971-2017: Guide for gaseous effluent handling in semiconductor industry---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Guide for gaseous effluent handling in semiconductor industry
ICS 71.040.40
G86
National Standards of People's Republic of China
Guide for the treatment of gases used in the manufacture of semiconductors
Posted.2017-11-01
2018-02-01 implementation
General Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
China National Standardization Administration released
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard is proposed and managed by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203).
This standard was drafted. Hao Chemical Research and Design Institute Co., Ltd., Southwest Chemical Research and Design Institute Co., Ltd., high-Mai instrument
Division, Guangdong Huate Gas Co., Ltd., Dongguan City, Chen Electronics Technology Co., Ltd., Shanghai Hua love chromatography Technology Co., Ltd., Shanghai
City Measurement and Testing Technology Research Institute.
The main drafters of this standard. Sun Fu Nan, Niu Yan East, Liao Heng Yi, Du Han Sheng, Wang Hong, Fang Hua, Chen Ying, Zhou Peng cloud.
Guide for the treatment of gases used in the manufacture of semiconductors
1 Scope
This standard specifies the principle and technology of gas emission system for semiconductor manufacturing.
This standard applies to the manufacture of semiconductor gas processing.
2 Terms and definitions
The following terms and definitions apply to this document.
2.1
Efficiency
The ratio (fraction or ratio) of chemical species removed to their volume delivered.
2.2
Pipe end emission reduction end-of-pipeabatement
Abatement technologies that can be used at the emission point of an exhaust gas treatment system.
2.3
Point-of-use abatement is used
Abatement technology that can be used at the point of discharge of gas emission devices from semiconductor process equipment.
2.4
Removal capacitycapacity
A substance can be removed by the amount.
3 Abbreviations
The following abbreviations apply to this document.
CVD. Chemical Vapor Deposition
EPI. Epitaxial Deposition
LEL. Lower Explosive Limits
LPCVD. Low Pressure Chemical Vapor Deposition
OEL. Occupational exposure limits (Ocupational Exposure Limit)
PECVD plasma enhanced chemical vapor deposition (PlasmaEnhancedChemicalVaporDeposition)
PFC. Perfluorocompounds
POU. PointOfUse
RTP. Rapid Heat Treatment (RapidThermalProcess)
VOC. Volatile Organic Compounds
4 General rules
4.1 Many processes may discharge the gas mixture may also be produced in the exhaust pipe of harmful substances.
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