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GB/T 33922-2017 English PDF

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GB/T 33922-2017: Wafer level test methods for MEMS piezoresistive pressure-sensitive die performances
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PDF similar to GB/T 33922-2017


Standard similar to GB/T 33922-2017

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Basic data

Standard ID GB/T 33922-2017 (GB/T33922-2017)
Description (Translated English) Wafer level test methods for MEMS piezoresistive pressure-sensitive die performances
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard L55
Classification of International Standard 31.200
Word Count Estimation 11,159
Date of Issue 2017-07-12
Date of Implementation 2018-02-01
Quoted Standard GB/T 2828.1; GB/T 20522; GB/T 26111
Issuing agency(ies) General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary This standard specifies the terms and definitions of MEMS piezoresistive pressure sensitive chips (pressure sensitive chips), test conditions, general rules for testing, test contents and methods. This standard applies to wafer-level testing of closed-loop and open-loop MEMS piezoresistive pressure-sensitive chip performance.

GB/T 33922-2017: Wafer level test methods for MEMS piezoresistive pressure-sensitive die performances


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Wafer level test methods for MEMS piezoresistive pressure-sensitive die performances ICS 31.200 L55 National Standards of People's Republic of China MEMS piezoresistive pressure sensitive chip performance Wafer level test method dieperformances 2017-07-12 Posted 2018-02-01 implementation General Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China China National Standardization Administration released Directory Foreword Ⅲ 1 Scope 1 2 Normative references 1 3 Terms and definitions 1 4 test conditions 1 4.1 Atmospheric conditions 4.2 Electromagnetic conditions 2 4.3 vibration conditions 2 4.4 Test System 2 5 General provisions of the test 2 5.1 Certificate File 2 5.2 warm-up time 2 5.3 Connection 2 6 test content and methods 2 6.1 Test Preparation 2 6.2 Resistance 2 6.3 atmospheric pressure output 3 6.4 static performance test 4 6.5 Temperature Performance Test 7

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard by the National Microelectromechanical Technology Standardization Technical Committee (SAC/TC336) and focal point. The main drafting unit of this standard.Peking University, China Machine Productivity Promotion Center, Beijing will be a Technology Co., Ltd., China Electronics Branch Technology Group Corporation thirteenth Institute, North University. The main drafters of this standard. Zhang Wei, Cheng Hongbing, Chen Derin, Li Haibin, Cui Bo, Shi Yunbo, Zhu Yue. MEMS piezoresistive pressure sensitive chip performance Wafer level test method

1 Scope

This standard specifies the terms and definitions of MEMS piezoresistive pressure-sensitive chips (referred to as pressure-sensitive chips), test conditions, test General provisions, test content and methods. This standard applies to closed-loop and open-loop MEMS piezoresistive pressure-sensitive chip performance wafer-level test.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version applies to this article Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 2828.1 Sampling procedures for sampling inspection - Part 1. Batch inspection sampling plan retrieved by acceptance quality limit (AQL) GB/T 20522 Semiconductor devices - Part 14-3. Semiconductor sensors --- pressure sensors GB/T 26111 Microelectromechanical System (MEMS) technology terminology

3 Terms and definitions

GB/T 20522 and GB/T 26111 as defined by the following terms and definitions apply to this document. 3.1 Piezoresistive pressure sensitive chip piezoresistivepressure-sensitivedie Using MEMS technology to fabricate a cavity film structure on a silicon substrate, fabricating a semiconductor resistor on the film and forming a Wheatstone bridge, utilizing a semiconductor Piezoresistive effect of the body to achieve the pressure signal into electrical signals chip. 3.2 Closed-loop piezoresistive pressure sensitive chip closedlooppiezoresistivepressure-sensitivedie Wheatstone bridge is a closed-structure pressure-sensitive chip. 3.3 Open-loop piezoresistive pressure sensitive chip openlooppiezoresistivepressure-sensitivedie Wheatstone Bridge is an open structure pressure sensitive chip.

4 test conditions

4.1 Atmospheric conditions Unless otherwise specified, all tests shall be carried out under the following conditions. a) Standard atmospheric conditions. Temperature .15 ℃ ~ 35 ℃; Relative humidity 20% ~ 80%; Atmospheric pressure .86kPa ~ 106kPa.

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