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GB/T 32188-2015: Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 32188-2015 | English | 169 |
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Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate
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GB/T 32188-2015
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Basic data | Standard ID | GB/T 32188-2015 (GB/T32188-2015) | | Description (Translated English) | Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H21 | | Classification of International Standard | 77.040 | | Word Count Estimation | 8,834 | | Date of Issue | 2015-12-10 | | Date of Implementation | 2016-11-01 | | Quoted Standard | GB/T 14264 | | Regulation (derived from) | National Standard Announcement 2015 No.38 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the use of double-crystal X-ray diffraction test gallium nitride single crystal substrate sheet rocking curve full width at half way. This standard applies to chemical vapor deposition and other methods for preparing a gallium nitride single crystal substrate sheet growth. | GB/T 32188-2015: Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate
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Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate
ICS 77.040
H21
National Standards of People's Republic of China
Gallium nitride single crystal substrate sheet double-crystal X-ray rocking curve
FWHM test methods
Issued on. 2015-12-10
2016-11-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and National Semiconductor Equipment and Materials Standards
Materials Branch of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed.
This standard was drafted. Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou Navier Technology Co., Ltd., China science
School Physics Institute, Beijing Branch of days of blue Semiconductor Co., Ltd., Dandong New Oriental Crystal Instruments.
The main drafters of this standard. Qiu Yongxin, Ren Guoqiang, Liu Zheng Hui, who Xionghui, Wang Jianfeng, Chen Xiaolong, Wang Wenjun, Zheng Hongjun, Xu Ke,
Zhao Songbin.
Gallium nitride single crystal substrate sheet double-crystal X-ray rocking curve
FWHM test methods
1 Scope
This standard specifies the use of double-crystal X-ray diffraction test gallium nitride single crystal substrate sheet rocking curve full width at half way.
This standard applies to chemical vapor deposition and other methods for preparing a gallium nitride single crystal substrate sheet growth.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 14264 semiconductor material terms
3 Terms and Definitions
GB/T 14264 and defined by the following terms and definitions apply to this document.
3.1
Diffraction plane thediffractionplane
X-ray of the incident beam, the beam diffraction plane configuration.
3.2
FWHM fulwidthathalfmaximum; FWHM
Rocking curve width at half maximum intensity curve.
3.3
χ axis χaxis
Sample tilt axes intersect the surface of the sample stage and the diffraction plane is made.
3.4
χ angle χangle
The angle between the sample surface and a crystal surface of the sample.
3.5
φ angle φangle
Sample surface normal angle of rotation around the sample stage.
3.6
φ scan φscan
And recorded continuously changing φ angle diffraction intensity measurement mode.
3.7
ω angle ωangle
The angle between the incident X-rays and the sample stage surface.
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