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US$189.00 · In stock Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 31352-2014: Test methods for warp of sapphire substrates Status: Valid
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 31352-2014 | English | 189 |
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Test methods for warp of sapphire substrates
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GB/T 31352-2014
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Basic data | Standard ID | GB/T 31352-2014 (GB/T31352-2014) | | Description (Translated English) | Test methods for warp of sapphire substrates | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H21 | | Classification of International Standard | 77.040.99 | | Word Count Estimation | 8,839 | | Date of Issue | 12/31/2014 | | Date of Implementation | 9/1/2015 | | Quoted Standard | GB/T 2828.1; GB/T 6620; GB/T 14264 | | Regulation (derived from) | National Standards Bulletin 2014 No. 33 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This Standard specifies the sapphire cutting, grinding film, polished (hereinafter referred to as the sapphire substrate sheet) Test Method warping degree. This Standard applies to a diameter of 50.8 mm ~ 304.8 mm, the thickness of the test piece sapphire |
GB/T 31352-2014: Test methods for warp of sapphire substrates---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test methods for warp of sapphire substrates
ICS 77.040.99
H21
National Standards of People's Republic of China
Sapphire substrate sheet warpage test methods
Issued on. 2014-12-31
2015-09-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
Please note that some of the content of this document may involve patents. Distribution of this document
Institutions do not assume the responsibility to identify these patents.
The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and National Semiconductor Equipment and Materials Standards
Materials Branch of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed.
This standard was drafted. Jiangsu GCL soft control equipment Technology Development Co., Ltd., Shanghai Institute of Optics and Fine Mechanics, North
Beijing can fit sun New Energy Technology Co., Ltd.
The main drafters of this standard. Xue against the United States, Wei Mingde, Huangxiu Kang, Hang Yin, Xiagen Ping, Xiao Zongjie.
Sapphire substrate sheet warpage test methods
1 Scope
This standard specifies the sapphire cutting discs, abrasive sheet, polished (hereinafter referred to as sapphire substrate sheet) Test Method for warping degree.
This standard applies to the diameter of 50.8mm ~ 304.8mm, thickness not less than 200μm test piece warpage of the sapphire substrate.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan
GB/T 6620 wafer warpage non-contact test method
GB/T 14264 semiconductor material terms
3 Terms and Definitions
GB/T 14264 and defined by the following terms and definitions apply to this document.
3.1
Warp warp
Free and holding the wafer difference between the maximum and the minimum distance between the planes and the reference plane planes.
3.2
The median plane datum plane mediansurfacereferenceplane
Designated by the wafer is less than the nominal diameter of the plane three equidistant points on the circumference of the diameter of the decision.
4 Method summary
4.1 Contact test
The sapphire substrate sheet is placed on the three fulcrum reference ring 3 forms a fulcrum reference plane, the use of low pressure along the displacement indicator
Sapphire substrate sheet measuring predetermined path distance from the reference plane, the record in pairs displacement indicator readings and find the difference, for a range of
Paired difference between the maximum and minimum values \u200b\u200bwhichever is the difference divided by 2, which means that the value obtained warpage of the substrate sheet.
4.2 Non-contact test
The sapphire substrate sheet is placed on the three fulcrum reference ring 3 forms a fulcrum reference plane, the use of non-contact displacement sensor
Along a predetermined path sapphire substrate sheet measuring distance from the reference plane, the record in pairs displacement indicator readings and find the difference, for a series of
Tabulated values \u200b\u200bfor the difference, whichever is the difference between maximum and minimum values \u200b\u200bdivided by 2, which means that the value obtained warpage of the substrate sheet.
4.3 white light interferometric test
Sapphire laser irradiation surface of the substrate sheet, the light reflected through the superposition of interference, the interference pattern recorded by the optical imaging system, the level of the beginning of shape
Measurement appearance; in the Z-axis direction of the objective lens continues to move slightly, in each position thereof, the optical imaging system to collect image photographing, shaped
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