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GB/T 26070-2010: Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 26070-2010 | English | 329 |
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Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method
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GB/T 26070-2010
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Basic data | Standard ID | GB/T 26070-2010 (GB/T26070-2010) | | Description (Translated English) | Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H17 | | Classification of International Standard | 77.040.99 | | Word Count Estimation | 14,178 | | Date of Issue | 1/10/2011 | | Date of Implementation | 10/1/2011 | | Regulation (derived from) | Announcement of Newly Approved National Standards 2011 No. (No. 166 overall) 1 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This Standard specifies III-V compound semiconductor test methods polished crystal subsurface damage. This Standard is applicable to GaAs, InP (GaP, GaSb may be reference) and other measurements of subsurface damage of a compound semiconductor single crystal polished. | GB/T 26070-2010: Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method
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Characterization of subsurface damage in poloshed compound semiconductor wafers by reflectance difference spectoracopy method
ICS 77.040.99
H17
National Standards of People's Republic of China
The semiconductor wafer polishing compound subsurface
Test methods for reflectance differential spectra of injury
Issued on. 2011-01-10
2011-10-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
The standard equipment by the National Standardization Technical Committee and the Technical Committee material of the semiconductor material (SAC/TC203/SC2) centralized.
This standard is drafted by the Institute of Semiconductors.
The main drafters of this standard. Chen Yonghai, Zhao Youwen, mention Liu Wang, Wang Yuanli.
The semiconductor wafer polishing compound subsurface
Test methods for reflectance differential spectra of injury
1 Scope
1.1 standard specifies the test method Ⅲ-Ⅴ compound semiconductor single crystal polished subsurface damage.
1.2 This standard applies to GaAs, InP (GaP, GaSb can be reference) and other compound semiconductor single crystal polished subsurface damage
measuring.
2 Definitions
2.1 Terms and Definitions
The following terms and definitions apply to this document.
2.1.1
Subsurface damage subsurfacedamage
After the semiconductor crystal by cutting, grinding, polishing and other processing techniques, within a distance of about polished surface of the sub-micron range, part of the integrity of the crystal will
Damaged, there is a very thin (thickness is generally several tens to hundreds of nanometers) damage layer, in which there is a lot of dislocations, lattice distortion, etc. missing
trap. The damaged layer called sub-surface damage layer.
2.1.2
Photoelastic effect photoelasticeffect
When there is stress or strain elastic medium, the dielectric constant or the refractive index of the medium change. Change the dielectric constant or refractive index
Variable closely related strain and applied stress. Anisotropic stress or strain will cause the dielectric function or refractive index anisotropy appears, guide
Organic crystal material appears optical anisotropy (birefringence, dichroism).
2.1.3
Optically anisotropic opticalanisotropy
When the optical properties of the material varies with the direction of propagation and the polarization state of the light, this material is said to have optical anisotropy.
2.1.4
Linearly polarized light linearlypolarizedlight
Vibration of the electric vector is always in a fixed plane of linearly polarized light is called.
2.1.5
Reflection difference spectrum reflectancedifferencespectroscopy, RDS
Measured near normal incidence conditions, the relative difference between the two orthogonal polarization of the incident light beam reflection coefficient with wavelength change is reflected poor
Spectrum points.
2.2 Symbol
The following symbols apply to this document.
2.2.1
Δr/r
The test crystalline material relative differences in two axis directions of the optical anisotropy of the reflection coefficient, i.e. differential reflection signal.
2.2.2
Reflectance measured crystal material.
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