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GB/T 23363-2009 English PDF

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GB/T 23363-2009: High purity indium oxide
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PDF similar to GB/T 23363-2009


Standard similar to GB/T 23363-2009

GB/T 39859   GB/T 20892   GB/T 23513.1   GB/T 23362.1   GB/T 23362.2   GB/T 23361   

Basic data

Standard ID GB/T 23363-2009 (GB/T23363-2009)
Description (Translated English) High purity indium oxide
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard H66
Classification of International Standard 77.150
Word Count Estimation 6,680
Date of Issue 2009-03-19
Date of Implementation 2010-01-01
Regulation (derived from) National Standard Approval Announcement 2009 No.3 (Total No.143)
Issuing agency(ies) General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary This standard specifies the requirements for high-purity indium oxide, test methods, inspection rules, signs, packaging, transport, storage and purchase order (or contract) content. This standard applies to metallic indium as raw material, purified, neutralization, purity indium oxide prepared by precipitation and calcination, the product is mainly used for making alkaline batteries, ITO materials and electronic components.

GB/T 23363-2009: High purity indium oxide

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High purity indium oxide ICS 77.150 H66 National Standards of People's Republic of China High-purity indium oxide Posted 2009-03-19 2010-01-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

The standard proposed by China Nonferrous Metals Industry Association. This standard Nonferrous Metals by the National Standardization Technical Committee. This standard by the Guangxi Institute of Metallurgy, Guangxi metallurgical products quality supervision and inspection station responsible for drafting. This standard by the Guangxi indium industry associations participated in the drafting. The main drafters of this standard. Huangzhao Min, Huangxiao Ke, Liu Chen, Huang Xusheng, Wuxiang Wu, Zhou Sulian, Su Peng, Chen Jin in. High-purity indium oxide

1 Scope

This standard specifies the requirements for high-purity indium oxide, test methods, inspection rules, marking, packaging, transportation, storage and purchase order (or contract) content. This standard applies to metallic indium as raw material, purification, high-purity indium oxide, precipitation and calcination obtained products are mainly used for making base Batteries, ITO materials and electronic components. Formula. In2O3 Molecular weight. 277.63 (according to 2007 international relative atomic mass)

2 Normative references

The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard. GB/T 191 Packaging - Pictorial signs Representation GB/T 1250 limit values \u200b\u200band the method of determining GB/T 6678 General Principles for Sampling Chemical Products GB/T 8170 digital rounding rules GB/T 23364 (all parts) of high-purity indium oxide chemical analysis methods YS/T 372.22 elemental analysis of precious metal alloys of indium content - EDTA complexometric titration

3 Requirements

3.1 Product classification High-purity indium oxide by chemical composition is divided into two levels. 4N, 5N. 3.2 Chemical composition 3.2.1 The chemical composition of high purity indium oxide shall meet the requirements in Table 1. 3.2.2 indium oxide (In2O3) mass fraction Found Quality 100% minus impurities Table 1 lists the difference between the sum of the scores. 3.2.3 Chemical composition according to GB/T 8170 digital rounding rule processing is determined after rounding value, according to GB/T relevant provisions of the 1250 get on. Table 1 grade Chemical composition (mass fraction) /% In2O3 not less than In not less than Cl no greater than Loss on ignition no greater than Impurity element of not more than Al As Cd Cu 4N 99.99 81.5 0.5 0.5 0.0010 0.0005 0.0010 0.0008 5N 99.999 81.5 0.5 0.5 0.00015 0.00005 0.00005 0.00005 grade Chemical composition (mass fraction) /% Impurity element of not more than Fe Pb Sb Sn Tl Zn Total impurity 4N 0.0010 0.0015 0.0005 0.0012 0.0010 0.0015 0.01 5N 0.0001 0.0001 0.00005 0.00015 0.00015 0.00015 0.001

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