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GB/T 15651.4-2017: Semiconductor devices -- Discrete devices -- Part 5-4: Optoelectronic devices -- Semiconductor lasers
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| GB/T 15651.4-2017 | English | 534 |
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Semiconductor devices -- Discrete devices -- Part 5-4: Optoelectronic devices -- Semiconductor lasers
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GB/T 15651.4-2017
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Basic data | Standard ID | GB/T 15651.4-2017 (GB/T15651.4-2017) | | Description (Translated English) | Semiconductor devices -- Discrete devices -- Part 5-4: Optoelectronic devices -- Semiconductor lasers | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L51 | | Classification of International Standard | 31.260 | | Word Count Estimation | 28,212 | | Date of Issue | 2017-05-31 | | Date of Implementation | 2017-12-01 | | Quoted Standard | IEC 60747-1; IEC 62007-1; IEC 62007-2; ISO 11145; ISO 11146-1; ISO 11146-2; ISO 11146-3; ISO 11554; ISO 11670; ISO 12005; ISO 13694; ISO 13695; ISO 17526 | | Adopted Standard | IEC 60747-5-4-2006, IDT | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the basic ratings, characteristics and test methods of semiconductor lasers. | GB/T 15651.4-2017: Semiconductor devices -- Discrete devices -- Part 5-4: Optoelectronic devices -- Semiconductor lasers
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Semiconductor devices - Discrete devices - Part 5-4. Optoelectronic devices - Semiconductor lasers
ICS 31.260
L51
National Standards of People's Republic of China
Semiconductor devices Discrete devices
Part 5-4. optoelectronic devices
A semiconductor laser
Semiconductordevices-Discretedevices-Part 5-4. Optoelectronicdevices-
(IEC 60747-5-4..2006, IDT)
2017-05-31 released
2017-12-01 implementation
General Administration of Quality Supervision, Inspection and Quarantine of the People 's Republic of China
China National Standardization Management Committee released
Directory
Preface III
1 Scope 1
2 normative reference document 1
3 Terms and definitions 2
3.1 Physical Concepts 2
3.2 Device Type --- Semiconductor Laser (Laser Diode) 2
3.3 General terms 2
3.4 Terms related to ratings and characteristics 3
Basic rating and characteristics
4.1 Type 7
4.2 Semiconductor 7
4.3 Outline and package details 7
4.4 Limits (Absolute Maximum Ratings) 7
4.5 Optoelectronic properties 8
4.6 Supplementary information - the effect of temperature on wavelengths
5 Test Method 10
5.1 Power Test 10
5.2 Output power stability 10
5.3 Time domain distribution 12
5.4 Life 14
5.5 Optical properties of laser beam 14
Appendix A (informative) Spatial definitions and spectral characteristics Related terms and definitions Reference Table 18
Appendix B (informative) Spatial correlation and spectral characteristics of the relevant test methods refer to Table 22
Appendix C (informative) Power Test and Life-Related Terms, Definitions and Test Methods Refer to Table 23
Reference 24
Figure 1 with a portless lens device 3
Figure 2 switch time 4
Figure 3 Laser diode threshold current 5
Figure 4 basic circuit Figure 10
Figure 5 basic circuit Figure 12
Figure 6 Typical Impulse Response Figure 13
Figure 7 Basic circuit Figure 14
Figure 8 Semi-strength angle 15
Figure 9 specifies the relationship between the plane and the mechanical reference plane
Figure 10 basic measurement device Figure 16
Figure 11 D1/2 and D1/e2 measuring device 17
Table 1 Photoelectric properties 8
Foreword
GB/T 15651 "Semiconductor Devices Discrete Devices and Integrated Circuits Part 5. Optoelectronic Devices" consists of the following components.
- Part 5-2. Basic ratings and characteristics of optoelectronic devices;
- Part 5-3. Testing methods for optoelectronic devices;
- Part 5-4. Optoelectronic devices - Semiconductor lasers.
This part is part 5-4 of GB/T 15651.
This part is drafted in accordance with the rules given in GB/T 1.1-2009.
This part uses the translation method equivalent to IEC 60747-5-4..2006 "Semiconductor devices Discrete devices Part 5-4. Optoelectronic devices
A semiconductor laser".
In this part of the normative reference to the international documents have a consistent correspondence between the following documents.
Test method for laser radiated power and power instability (ISO 11554..2006, MOD); GB/T 13863-2011;
GB/T 15313-2008 Laser terminology (ISO 11145..2006, MOD);
Semiconductor devices and integrated circuits - Part 1. General principles (IEC 747-1. 1983, IDT); GB/T 17573-1998.
Test method for laser beam width, divergence angle and beam transmission ratio for laser and laser related equipment GB/T 26599.1-2011
Part 1. No astigmatic and simple astigmatism beams (ISO 11146-1..2005, IDT);
Laser beam pointing and position stability testing methods (ISO 11670..2003, IDT) GB/T 27662-2011.
This section makes the following editorial changes.
In the normative reference document in Chapter 2, "IEC 60747-1" has been added;
--- Figure 1 in the receiving angle or beam angle α corresponds to the full angle;
--- 3.4.1 switch time "(see Figure 3)" to "(see Figure 2)";
--- 3.4.3 Note 3 in the differential output (radiation) power quantum efficiency "ηed" to "ηd";
--- 3.4.7 "Optical light beam" (see ISO 1146-3) "to" (see ISO 11146-3) ";
--- "4.2.1.1" to "4.2.1";
--- Table 1, 4.5.12 side mode suppression than "SMS" to "SMSR";
--- 5.5.4a) Note "After determining the specified plane according to φ, determine" after adding "as shown in Figure 8."
In Appendix A, the term "coherence to pulse repetition frequency" is referenced by ISO 11145 from "3.14 to 3.51" to "3.15 to 3.52"
The term "quantum efficiency to unsteady cavity" refers to ISO 11145 from "3.52 to 3.56" to "3.54 to 3.58", the term "polarization"
ISO 11145 changed from "3.36" to "3.37";
- In Appendix A, remove the "3.54" ISO 11145 referenced by the terms "peak emission wavelength", "spectral radiation bandwidth"
- In Appendix C, the "opening delay time" is referenced by IEC 60747-5-4 from "3.4.1.4" to "3.4.1.3", "life"
ISO 11145 changed from "3.33" to "3.34".
This part is made by the Ministry of Industry and Information Technology of the People's Republic of China.
This part of the National Semiconductor Device Standardization Technical Committee (SAC/TC78) centralized.
This part of the drafting unit. China Electronics Technology Group Corporation thirteenth research institute.
The main drafters of this part. Liu Xiaowen, Chen Hairong, An Zhenfeng, Niu Jiangli, Wang Xiaoyan, Ren Hao.
Semiconductor devices Discrete devices
Part 5-4. optoelectronic devices
A semiconductor laser
1 Scope
This part of GB/T 15651 specifies the basic ratings, characteristics and test methods of semiconductor lasers.
2 normative reference documents
The following documents are indispensable for the application of this document. For dated references, only the dated edition applies to this article
Pieces. For undated references, the latest edition (including all modifications) applies to this document.
IEC 60747-1 Semiconductor devices - Discrete devices and integrated circuits - Part 1. General principles (Semiconductordevices - Dis -
cretedevicesandintegratedcircuits-Part 1. General)
IEC 62007-1 Semiconductor optoelectronic devices for optical fiber optics systems - Part 1. Basic ratings and characteristics (Semiconductor
optoelectricdevicesforfibreopticsystemapplications-Part 1. Essentialratingsandcharacteristics)
IEC 62007-2 Semiconductor optoelectronic devices for optical fiber optics systems - Part 2. Test methods (Semiconductoroptoelectric
devicesforfibreopticsystemapplications-Part 2. Measuringmethods)
ISO 11145 Optical and optical instruments Laser and laser related equipment Terms and symbols (Opticsandoptical
instruments-Lasersandlaserrelatedequipment-Vocabularyandsymbols)
ISO 11146-1 Laser and laser-related equipment Test methods for laser beam width, divergence angle and beam transmission ratio Test method 1
Part. no astigmatism and simple astigmatism (Lasersandlaser-relatedequipment-Testmethodsforlaserbeam
widths, divergenceanglesandbeam propagationratios-Part 1. Stigmaticandsimpleastigmatic
beams)
ISO 11146-2 Laser and laser-related equipment - Test methods for laser beam width, beam divergence angle and beam transmission ratio - Part 2
. Lasersandlaser-relatedequipment-Test methods for laserbeam widths,
divergenceanglesandbeampropagationratios-Part 2. Generalastigmaticbeams)
ISO 11146-3 Laser and laser-related equipment - Test method for laser beam width, beam divergence angle and beam transmission ratio Part 3
Points. the essence and geometry of the laser beam classification, transmission and test method details (Lasersandlaser-relatedequipment-Test
methodsforlaserbeamwidths, divergenceanglesandbeampropagratratios-Part 3. Intrinsicand
geometricallaserbeamclassification, propagationanddetailsoftestmethods)
ISO 11554 optical and optical instruments - Laser and laser - related equipment - Laser beam power, energy and time characteristics - Test methods
(Opticsandopticalinstruments-Lasersandlaser-relatedequipment-Testmethodsforlaserbeam
power, energyandtemporalcharacteristics
ISO 11670 Laser and laser-related equipment Laser beam parameters Test method Beam position stability (Lasersandlaser-re-
latedequipment-Testmethodsforlaserbeamparameters-Beampositionalstability)
ISO 12005 Laser and laser-related equipment Laser beam parameters Test method Polarization (Lasersandlaser-relatedequip-
ment-testmethodsforlaserbeamparameters-Polarization)
ISO 13694 Optics and optics - Laser and laser related equipment - Laser beam power (energy) - Density distribution test method
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