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GB/T 14112-2015 English PDF

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GB/T 14112-2015: Semiconductor integrated circuits -- Specification for stamped lead frames of plastic DIP
Status: Valid

GB/T 14112: Evolution and historical versions

Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusPDF
GB/T 14112-2015English549 Add to Cart 5 days [Need to translate] Semiconductor integrated circuits -- Specification for stamped lead frames of plastic DIP Valid GB/T 14112-2015
GB/T 14112-1993English759 Add to Cart 5 days [Need to translate] Semiconductor integrated circuits Specification for stamped leadframes of plastic DIP Obsolete GB/T 14112-1993

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Basic data

Standard ID GB/T 14112-2015 (GB/T14112-2015)
Description (Translated English) Semiconductor integrated circuits -- Specification for stamped lead frames of plastic DIP
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard L56
Classification of International Standard 31.200
Word Count Estimation 26,289
Date of Issue 2015-05-15
Date of Implementation 2016-01-01
Older Standard (superseded by this standard) GB/T 14112-1993
Quoted Standard GB/T 2423.60-2008; GB/T 2828.1-2012; GB/T 7092; GB/T 14113; SJ 20129
Regulation (derived from) National Standard Announcement 2015 No. 15
Issuing agency(ies) General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary This Standard specifies the semiconductor integrated circuit packaging plastic dual lead frame punching type of technical requirements and inspection rules. This Standard applies to double row (DIP) type lead frame punching. Single punching type lead frame may also refer to use.

GB/T 14112-2015: Semiconductor integrated circuits -- Specification for stamped lead frames of plastic DIP


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Semiconductor integrated circuits. Specification for stamped leadframes of plastic DIP ICS 31.200 L56 National Standards of People's Republic of China Replacing GB/T 14112-1993 The semiconductor integrated circuit Plastic dual-stamped leadframe package specification Issued on. 2015-05-15 2016-01-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Table of Contents

Introduction Ⅲ 1 Scope 1 2 Normative references 1 3 Terms and definitions 4 technical requirements 4.1 size of the lead frame 1 4.2 leadframe shape and position tolerances 2 4.3 appearance of the lead frame 3 4.4 leadframe plating 3 4.5 intensity of the lead frame outer leads 4 4.6 copper peel test 4 4.7 silver peel test 4 5 Inspection Rules 4 Constituting 5.1 Inspection Lot 4 5.2 Qualification approval procedures 4 5.3 Quality conformance inspection 4 6 7 Ordering Information 7 signs, packaging, transportation and storage 7 7.1 logo and packaging 7 7.2 Transport, storage 7 Appendix A (normative) mechanical measuring lead frame 8 Appendix B (normative) leadframe high temperature and mechanical tests 16 Annex C (informative) allows batch failure rate (LTPD) sampling program 18

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. This standard replaces GB/T 14112-1993 "Plastic Dual semiconductor integrated circuit package stamped leadframe norms." This standard and GB/T 14112-1993 compared to the main changes are as follows. --- About Normative references. increase the introductory phrase; sampling standards set by GB/T 2828.1-2012 instead of IEC 410; increase the reference Document GB/T 2423.60-2008, SJ20129; --- Increasing the terms and definitions, and an increase in the nominal length, refined nip coplanarity, chip bonding subsidence zone definition; --- Standard "4.2 leadframe shape and position tolerances", increasing the flatness of the die attach area leadframe internal position tolerances Relevant requirements; --- Revised standard for "scoliosis" requirements (see 4.2.1). the original standard only defines scoliosis less than 0.05mm/150mm, this standard Quasi predetermined nominal over the entire length; --- Revised standard on the "curl" requirements (see 4.2.2). the original standard specifies only texturized less than 0.5mm/150mm, According to the provisions of this standard material thickness; --- Revised standard on the "strip twisted" requirements (see 4.2.4). the original standard only provides a framework for distortion of less than 0.5mm, the present standard Brigadier framework modified to strip twisted twist, and according to a predetermined thickness of the material; --- Revised standard on the "twisted wire" requirements (see 4.2.5). the original standard specifies the lead angle and twisted inner lead ends Point of maximum distortion value, this standard removed within the specified maximum distortion leads endpoint values; --- Revised standard on the "depth coined" requirements (see 4.2.6). In the original standard, based on the increase of the maximum depth and the coining Small lead spacing requirements; --- Revised standard on the "insulating gap" requirements (see 4.2.7). insulation gap original standard is 0.15mm, this standard Revised to 0.1mm; --- Revised standard on the "fine nip coplanarity" requirements (see 4.2.8). the original standards set forth in the leadframe strip wide 50.8mm, coining region coplanarity of ± 0.25mm, this revised standard is ± 0.2mm; --- Revised standard on the "die attach area slope" requirements (see 4.2.9). the original standard were provided for pressure and non-pressure situation Under the slope of the standard uniform provisions for the maximum inclination in the length or width of each size 2.54mm 0.05mm; --- Of the standard "4.3 leadframe appearance" in the corresponding provisions have been adjusted, the original appearance of the standard required by the lead frame "feature Area, other areas "represent; This standard" glitches, pits, dents and scratches "are described, and the original standard" scratch "in Requires appropriate tightening, that is, in any area, "scratch" shall not be more than one; --- Revised standard on the "silver local" requirements (see 4.4.1.2). the original standards set forth in silver layer thickness not less than 3.5μm (flat Mean), this revised standard is not less than 3μm; --- Revised standard on the "appearance of the coating" requirements (see 4.4.2). In the original standard, based on the appearance of the coating increases the relevance Claim; --- Added "copper peel test," the relevant requirements (see 4.6); --- Added "Silver peeling test" the relevant requirements (see 4.7); --- Revised standard on the "inspection requirements" requirements. Modify the original standard A1a, A1b, A2 packet detection level and AQL, And A1a, A1b, B2a, B2b packet merge; the original standard group B LTPD sampling plans, this standard will B1, B2, B3 revised to AQL sampling plan, and increased C3, C4 sampling inspection requirements; --- Amend the relevant requirements of the standard for "storage". the original standard silver-plated lead frame storage period of three months, the provisions of this standard is 6 Month (see 7.2). Please note that some of the content of this document may involve patents. Release mechanism of the present document does not assume responsibility for the identification of these patents. The standard proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This standard by the National Standardization Technical Committee of the semiconductor device (SAC/TC78) centralized. This standard was drafted. Xiamen Yonghong Technology Limited. The main drafters of this standard. Lingui Xian, Wang Feng Tao, Hong Yuyun. This standard replaces the standards previously issued as follows. --- GB/T 14112-1993. The semiconductor integrated circuit Plastic dual-stamped leadframe package specification

1 Scope

This standard specifies the semiconductor integrated circuit packaging plastic dual punching type lead frame (hereinafter referred to as the lead frame) of technical requirements and inspection Inspection rules. This standard applies to double row (DIP) type lead frame punching. Single stamped leadframe may also refer to use.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 2423.60-2008 Environmental testing for electric and electronic products Part 2. Test methods - Test U. Robustness of terminations and integral security Attachments strength GB/T 2828.1-2012 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch test sample plan GB/T 7092 semiconductor integrated circuit Dimensions GB/T 14113 semiconductor integrated circuit package terminology SJ20129 metal plating layer thickness measurement method

3 Terms and Definitions

GB/T 14113 and as defined in the following terms and definitions apply to this document. 3.1 Nominal length nominallength Provisions on the lead frame strip drawing long. 3.2 Fine nip coplanarity atotalareaofprecisionpressure The lead end portion of the lead frame coining region with respect to the reference height of the height difference. 3.3 Chip bonding area subsidence chipbondingareasubsidence Lead frame chip bonding pressure level subsidence area, namely the die attach region and uncompressed height difference before, commonly known as the fight or bent concave depth. 4. Technical Requirements 4.1 leadframe size Lead frame size should be consistent with the relevant provisions of GB/T 7092, and to meet the requirements of the lead frame design drawings.

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