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GB/T 6620-2009: Test method for measuring warp on silicon slices by noncontact scanning
Status: Valid GB/T 6620: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 6620-2009 | English | 229 |
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3 days [Need to translate]
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Test method for measuring warp on silicon slices by noncontact scanning
| Valid |
GB/T 6620-2009
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| GB/T 6620-1995 | English | 279 |
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3 days [Need to translate]
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Test method for measuring warp on silicon slices by nontact scanning
| Obsolete |
GB/T 6620-1995
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| GB 6620-1986 | English | 239 |
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2 days [Need to translate]
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Standard method for measuring warp of silicon slices by noncontacting technique
| Obsolete |
GB 6620-1986
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PDF similar to GB/T 6620-2009
Basic data | Standard ID | GB/T 6620-2009 (GB/T6620-2009) | | Description (Translated English) | Test method for measuring warp on silicon slices by noncontact scanning | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H82 | | Classification of International Standard | 29.045 | | Word Count Estimation | 10,110 | | Date of Issue | 2009-10-30 | | Date of Implementation | 2010-06-01 | | Older Standard (superseded by this standard) | GB/T 6620-1995 | | Quoted Standard | GB/T 2828.1; GB/T 6618; GB/T 14264 | | Adopted Standard | SEMI MF657-0705, MOD | | Regulation (derived from) | National Standard Approval Announcement 2009 No.12 (Total No.152) | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the monocrystalline silicon cutting discs, grinding pieces, polished (hereinafter referred to as silicon) warpage non-contact testing methods. This standard for measuring a diameter greater than 50 mm, a thickness greater than 180 ��m circular wafers. This standard is also applicable to other semiconductor measuring warpage picture card. The purpose of this test method is used for incoming inspection or process control. This test method is also suitable for hot chemistry monitoring device wafers during processing of warpage. | GB/T 6620-2009: Test method for measuring warp on silicon slices by noncontact scanning---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for measuring warp on silicon slices by noncontact scanning
ICS 29.045
H82
National Standards of People's Republic of China
Replacing GB/T 6620-1995
Wafer warpage non-contact test method
Posted 2009-10-30
2010-06-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This revised standard adopts SEMIMF657-0705 "changes in non-contact test wafer warpage and the total thickness of the method."
This standard compared with SEMIMF657-0705, the main changes are as follows.
--- This standard does not change the use of SEMI standard part of the total thickness of the test;
--- This test wafer thickness range is narrower than the SEMI standards;
--- The standard format prepared according to GB/T 1.1 regulations.
This standard replaces GB/T 6620-1995 "wafer warpage non-contact testing methods."
This standard compared with GB/T 6620-1995, the main changes are as follows.
--- Modify the test wafer thickness range;
--- Increasing the reference documents, terminology, meaning and purpose, interference factors and environmental conditions measurement section;
--- Revised instrument calibration part;
--- Increasing the arbitration measure;
--- Remove the calculation of the total thickness variations;
--- Increasing the calculation of the arbitration warp mean and standard deviation.
This standard by the National Standardization Technical Committee of semiconductor equipment and materials proposed.
This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material.
This standard was drafted. Luoyang Monocrystalline Silicon Co., universal silicon peak Electronics Co., Ltd.
The main drafters. Zhang Jingwen, Jiang Jianguo, Tiansu Xia, Liu Yuqin, Chunlan floor.
This standard replaces the standards previously issued as follows.
--- GB 6620-1986, GB/T 6620-1995.
Wafer warpage non-contact test method
1 Scope
This standard specifies the silicon single crystal cutting, grinding film, polished (hereinafter referred to as wafers) warpage non-contact testing methods.
This standard applies to measuring the diameter larger than 50mm, a thickness greater than the circular silicon 180μm. This standard also applies to measure other half
Conductor wafer warpage. The purpose of this test method is used for incoming inspection or process control. This test method is also applicable to the monitor plus member
Thermo-chemical effect during processing of wafer warpage.
2 Normative references
The following documents contain provisions which, through reference in this standard, constitute provisions of this standard. For dated references, subsequent
Repair orders (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research
Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard.
GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan
(GB/T 2828.1-2003, ISO 2859-1.1999, IDT)
GB/T 6618 wafer thickness and total thickness variation of test methods
GB/T 14264 semiconductor material terms
3 Terms and Definitions
The semiconductor material and the following terms and definitions GB/T 14264 apply to this standard established.
3.1
Positive and back surfaces of the wafer track equidistant points.
3.2
Quality standards in the region, a free, non-clamped silicon planes in reference to the maximum and minimum relative difference in distance plane.
4 Method summary
Placed on a silicon wafer ring 3 reference fulcrum, three fulcrum forming a reference plane. A tester probe on the wafer, along the lower surface
Synchronous scanning specified path. During the scanning process, pairs given, the distance between the probe and the surface of the silicon wafer has recently obtained from each pair
From the difference. The difference between the maximum and the minimum distance between the pair of half the difference is to test the value of wafer warpage. A scan path in FIG.
Shown. Typical wafer warpage schematic form shown in Fig.
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