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GB/T 5238-2019: Monocrystalline germanium and monocrystalline germanium slices
Status: Valid GB/T 5238: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 5238-2019 | English | 199 |
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3 days [Need to translate]
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Monocrystalline germanium and monocrystalline germanium slices
| Valid |
GB/T 5238-2019
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| GB/T 5238-2009 | English | 208 |
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1 days [Need to translate]
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Monocrystalline germanium and monocrystalline germanium slices
| Obsolete |
GB/T 5238-2009
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| GB/T 5238-1995 | English | 239 |
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Monocrystalline germanium
| Obsolete |
GB/T 5238-1995
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| GB 5238-1985 | English | 199 |
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2 days [Need to translate]
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Monocrystalline germanium
| Obsolete |
GB 5238-1985
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PDF similar to GB/T 5238-2019
Basic data | Standard ID | GB/T 5238-2019 (GB/T5238-2019) | | Description (Translated English) | Monocrystalline germanium and monocrystalline germanium slices | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H82 | | Classification of International Standard | 29.045 | | Word Count Estimation | 10,162 | | Date of Issue | 2019-06-04 | | Date of Implementation | 2020-05-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 5238-2019: Monocrystalline germanium and monocrystalline germanium slices---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Monocrystalline germanium and monocrystalline germanium slices
ICS 29.045
H82
National Standards of People's Republic of China
Replace GB/T 5238-2009
锗 single crystal and 锗 single wafer
Published on.2019-06-04
2020-05-01 implementation
State market supervision and administration
China National Standardization Administration issued
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard replaces GB/T 5238-2009 "锗 single crystal and 锗 single wafer". Compared with GB/T 5238-2009, except for editorial changes
The main technical changes are as follows.
--- Revised the scope of application of the standard, and changed the "epitaxial substrate" to "infrared optical components" (see Chapter 1, Chapter 1 of the.2009 edition);
--- GB/T 1552, GB/T 5254 have been deleted from the normative reference file, and GB/T 1555, GB/T 14264 have been added.
GB/T 14844, GB/T 26074 (see Chapter 2, Chapter 2 of the.2009 edition);
--- Added terms and definitions (see Chapter 3);
--- Revised the brand representation method (see 4.1, 3.2 of the.2009 edition);
--- Increased requirements for non-doped germanium single crystals (see Chapter 4);
--- Section resistivity non-uniformity changed to radial resistivity change, and revised its requirements (see 4.2.3,.2009 edition of 3.3.1.1);
--- Revised minority carrier lifetime requirements for single crystals with resistivity less than 1.0 Ω·cm (see 4.2.4, 3.3.1.2 of.2009 edition);
--- Revised the requirements for the integrity of germanium single crystals (see 4.2.6.1, 3.3.1.4 of the.2009 edition);
--- Revised the relative tolerance of the diameter of 10mm ~ 100mm 锗 single crystal (see 4.2.7, 3.3.2.1 of the.2009 edition);
--- Increase the requirement for single crystals larger than 100 mm in diameter (see 4.2.7);
--- Removed the length requirement (see 3.3.2.1 of the.2009 edition);
--- Increased the surface quality requirements of germanium single crystal (see 4.2.8);
--- Revised the requirements for the geometric parameters of the single wafer (see 4.3.2, 3.3.2.2 of the.2009 edition);
--- Revised the requirements for the surface quality of single wafers (see 4.3.3, 3.3.3 of the.2009 edition);
--- Revised the judgment of group approval, inspection items, sampling and inspection results (see Chapter 6, Chapter 5 of the.2009 edition).
This standard is supported by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and National Semiconductor Equipment and Materials Standards.
The Technical Committee of Materials Technical Committee (SAC/TC203/SC2) jointly proposed and managed.
This standard was drafted. Zhonghao Technology Co., Ltd., Yunnan Linyi Xinyuan Industry Co., Ltd., Guangdong Pioneer Materials Co., Ltd.
Division, Nonferrous Metals Technology and Economic Research Institute, Beijing Heineng Sunshine New Energy Technology Co., Ltd.
The main drafters of this standard. Ke Zunbin, Liu Xinjun, Hui Feng, Zhu Liu, Yin Shiping, Yang Suxin, Xiao Zongxi.
The previous versions of the standards replaced by this standard are.
---GB/T 5238-1985, GB/T 5238-1995, GB/T 5238-2009;
---GB/T 15713-1995.
锗 single crystal and 锗 single wafer
1 Scope
This standard specifies the requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificate of 锗 single crystal and 锗 single wafer.
And the content of the order (or contract).
This standard is applicable to the preparation of semiconductor devices, laser components, germanium single crystals and germanium single wafers for infrared optical components.
2 Normative references
The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article.
Pieces. For undated references, the latest edition (including all amendments) applies to this document.
GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials
GB/T 1553 Determination of minority carrier lifetime in silicon and germanium
GB/T 1555 semiconductor single crystal orientation determination method
GB/T 2828.1-2012.Sampling procedures for counting sampling - Part 1. Quantitative inspection by batches
plan
GB/T 5252 锗 single crystal dislocation corrosion pit density measurement method
GB/T 14264 semiconductor material terminology
GB/T 14844 semiconductor material grade representation
GB/T 26074 锗 single crystal resistivity DC four-probe measurement method
3 Terms and definitions
The terms and definitions defined in GB/T 14264 apply to this document.
4 requirements
4.1 Brand
The grades of 锗 single crystal and 锗 single wafer shall be in accordance with GB/T 14844.
4.2 锗 single crystal
4.2.1 Conduction type
The conductivity type of germanium single crystal is divided into N type and P type.
4.2.2 Resistivity
The resistivity of germanium single crystals shall comply with the requirements of Table 1.
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