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GB/T 12965-2018 English PDF

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GB/T 12965-2018: Monocrystalline silicon as cut wafers and lapped wafers
Status: Valid

GB/T 12965: Evolution and historical versions

Standard ID	Contents [version]	USD	STEP2	[PDF] delivered in	Standard Title (Description)	Status	PDF
GB/T 12965-2018	English	199	Add to Cart	3 days [Need to translate]	Monocrystalline silicon as cut wafers and lapped wafers	Valid	GB/T 12965-2018
GB/T 12965-2005	English	359	Add to Cart	3 days [Need to translate]	Monocrystalline silicon as cut slices and lapped slices	Obsolete	GB/T 12965-2005
GB/T 12965-1996	English	319	Add to Cart	3 days [Need to translate]	Monocrystalline silicon as cut slices and lapped slices	Obsolete	GB/T 12965-1996
GB 12965-1991	English	239	Add to Cart	2 days [Need to translate]	Monocrystalline silicon as cut slices and lapped slices	Obsolete	GB 12965-1991

PDF similar to GB/T 12965-2018

Standard similar to GB/T 12965-2018

GB/T 12963 GB/T 29055 GB/T 25074 GB/T 12964

Basic data

Standard ID	GB/T 12965-2018 (GB/T12965-2018)
Description (Translated English)	Monocrystalline silicon as cut wafers and lapped wafers
Sector / Industry	National Standard (Recommended)
Classification of Chinese Standard	H82
Classification of International Standard	29.045
Word Count Estimation	10,156
Date of Issue	2018-09-17
Date of Implementation	2019-06-01
Older Standard (superseded by this standard)	GB/T 12965-2005
Regulation (derived from)	National Standard Announcement No. 11 of 2018
Issuing agency(ies)	State Administration for Market Regulation, China National Standardization Administration

GB/T 12965-2018: Monocrystalline silicon as cut wafers and lapped wafers

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Monocrystalline silicon as cut wafers and lapped wafers ICS 29.045 H82 National Standards of People's Republic of China Replace GB/T 12965-2005 Silicon single crystal cutting sheet and abrasive sheet Published on.2018-09-17 2019-06-01 implementation State market supervision and administration China National Standardization Administration issued

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard replaces GB/T 12965-2005 "silicon single crystal cutting sheet and abrasive sheet", compared with GB/T 12965-2005, in addition to editorial The main technical changes outside the revision are as follows. --- The scope will be "this standard applies to the circle prepared by straight-drawing, suspension zone melting and neutron enthalpy-doped silicon single crystal by cutting and double-side grinding. "Shaped silicon wafer" was changed to "This standard applies to straight preparation by the Czochralski method, the suspension zone melting method (including neutron enthalpy doping and gas phase doping). Circular silicon single crystal cutting sheets and abrasive sheets having a diameter of not more than.200 mm" (see Chapter 1, Chapter 1 of the.2005 edition); --- GB/T 1552, GB/T 1554, GB/T 12964 have been deleted from the normative reference documents, and GB/T 1551 has been added. GB/T 6619, GB/T 26067, GB/T 29507, GB/T 32279, GB/T 32280, YS/T 28 (see Chapter 2,.2005) Chapter 2 of the annual edition); --- Deleted the specific terminology and changed it to "The terms and definitions defined in GB/T 14264 apply to this document" (see Chapter 3,.2005). Chapter 3 of the annual edition); --- Removed the classification according to the silicon single crystal growth method, and added "the silicon wafer is divided into commonly used {100}, {111} according to the surface orientation. {110} three" (see 4.2.2, version 4.1 of.2005); --- Combine "physical performance parameters" and "crystal integrity" into "physical and chemical properties" (see 5.1,.2005, 5.1, 5.3); --- Added "electrical performance" (see 5.2); --- Revised the allowable deviation of the diameter of 50.8mm, 125mm, 150mm silicon wafers, revised 100mm, 125mm, 150mm The thickness of the diameter cutting piece, revised the warpage requirements of 150mm and.200mm diameter silicon wafers (see Table 1,.2005 edition) Table 1); --- Increased the requirements for the curvature of the silicon (see Table 5.3); --- Increased the main reference surface diameter and the size of the slit (see Figure 1); --- Revised the surface orientation of the silicon wafer as "the surface orientation of the silicon wafer is {100}, {110}, {111}, commonly used {100}, {111}" (see 5.4.1, 5.4.1 of the.2005 edition; --- Added "other crystal orientation requirements not included, determined by the supply and demand sides" (5.4.3); --- Deleted "Whether the silicon wafer is used to make the reference surface, determined by the user" and "The orientation and position of the silicon master and sub-reference planes should conform to Table 2 and The provisions of Table 1" (see 5.4.3, 5.4.4 of the.2005 edition); --- Increase the position of the main and sub-reference surface positions of the silicon wafer with a diameter of not more than 150mm (see Figure 2); --- Revised the requirements for edge contours (see 5.6, 5.7 of.2005 edition); --- Removed the rule that the circumference of each chipping of the silicon wafer is not more than 2mm, and the requirement for the chipping by the chamfered abrasive sheet is "≤ The 0.3mm" revision is "None" and the requirements for the radial extension of the collapse are listed in Table 4 (see Table 5.7.1, Table 4,.2005). 5.6.1); --- Added another experimental method for resistivity, thickness and total thickness variation, warpage, and clarified the arbitration method (see 6.2, 6.5, 6.7,.2005 edition of 6.2, 6.11, 6.12); --- Revised the measurement method of the diameter of the main reference plane of the silicon wafer (see 6.8, 6.7 of.2005 edition); --- "Measurement of the size of the silicon wafer incision is determined by the supply and demand sides" revised to "measurement of the size of the incision according to the provisions of GB/T 26067" (See 6.9, 6.8 of the.2005 edition); --- Revised the inspection project and changed it to the mandatory inspection project and the project negotiated between the supplier and the buyer (see 7.3.1, 7.3.2, 7.3 of the.2005 edition); --- Removed the sampling regulations for destructive inspection items (see 7.4.2 of the.2005 edition); --- Added order form (or contract) content (see Chapter 9). This standard is supported by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and National Semiconductor Equipment and Materials Standards. The Technical Subcommittee of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed. This standard was drafted. Yanyan Semiconductor Materials Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., Shanghai Hejing Silicon Materials Co., Ltd. Zhejiang Jinrui Technology Co., Ltd., Tianjin Huanou Semiconductor Materials Technology Co., Ltd., Zhejiang Silicon Materials Quality Inspection Center. The main drafters of this standard. Sun Yan, Lu Liyan, Lou Chunlan, Xu Xinhua, Zhang Haiying, Zhang Xueyu, Pan Jinping, Liu Zhuo. The previous versions of the standards replaced by this standard are. ---GB/T 12965-1991, GB/T 12965-1996, GB/T 12965-2005. Silicon single crystal cutting sheet and abrasive sheet

1 Scope

This standard specifies the grades and classifications, requirements, test methods, inspection rules, signs, and specifications of silicon single crystal cutting sheets and abrasive sheets (referred to as silicon wafers). Packaging, transportation, storage, quality certificate and order form (or contract). This standard is applicable to diameters of not more than.200mm prepared by Czochralski method, suspension zone melting method (including neutron enthalpy doping and gas phase doping). Round silicon single crystal cutting sheets and abrasive sheets. Products are mainly used to make transistors, rectifier devices, etc., or further processed into polished sheets.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article. Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials GB/T 1551 silicon single crystal resistivity determination method GB/T 1555 semiconductor single crystal orientation determination method GB/T 2828.1-2012.Sampling procedures for sampling by sampling - Part 1 . Batch-by-batch inspections by Retrieving Quality of Acceptance (AQL) plan GB/T 6616 Semiconductor silicon wafer resistivity and silicon film sheet resistance test method Non-contact eddy current method GB/T 6618 silicon wafer thickness and total thickness variation test method GB/T 6619 silicon wafer bending test method GB/T 6620 silicon wafer warpage non-contact test method GB/T 6624 silicon polishing sheet surface quality visual inspection method GB/T 11073 Silicon wafer radial resistivity change measurement method GB/T 12962 silicon single crystal GB/T 13387 Silicon and other electronic materials wafer reference surface length measurement method GB/T 13388 silicon wafer reference surface crystallographic orientation X-ray test method GB/T 14140 silicon wafer diameter measurement method GB/T 14264 semiconductor material terminology GB/T 14844 semiconductor material grade representation GB/T 26067 wafer incision size test method GB/T 29507 Wafer flatness, thickness and total thickness change test automatic non-contact scanning method GB/T 32279 wafer order form input specification GB/T 32280 wafer warpage test automatic non-contact scanning method YS/T 26 wafer edge contour inspection method YS/T 28 wafer packaging

3 Terms and definitions

The terms and definitions defined in GB/T 14264 apply to this document.

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