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GB/T 12964-2018 English PDF

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GB/T 12964-2018: Monocrystalline silicon polished wafers
Status: Valid

GB/T 12964: Evolution and historical versions

Standard ID	Contents [version]	USD	STEP2	[PDF] delivered in	Standard Title (Description)	Status	PDF
GB/T 12964-2018	English	199	Add to Cart	3 days [Need to translate]	Monocrystalline silicon polished wafers	Valid	GB/T 12964-2018
GB/T 12964-2003	English	399	Add to Cart	3 days [Need to translate]	Monocrystalline silicon polished wafers	Obsolete	GB/T 12964-2003
GB/T 12964-1996	English	399	Add to Cart	3 days [Need to translate]	Monocrystalline silicon polished wafers	Obsolete	GB/T 12964-1996
GB 12964-1991	English	279	Add to Cart	3 days [Need to translate]	Monocrystalline silicon polished slices	Obsolete	GB 12964-1991

PDF similar to GB/T 12964-2018

Standard similar to GB/T 12964-2018

GB/T 12963 GB/T 29055 GB/T 25074 GB/T 12965

Basic data

Standard ID	GB/T 12964-2018 (GB/T12964-2018)
Description (Translated English)	Monocrystalline silicon polished wafers
Sector / Industry	National Standard (Recommended)
Classification of Chinese Standard	H82
Classification of International Standard	29.045
Word Count Estimation	10,15
Date of Issue	2018-09-17
Date of Implementation	2019-06-01
Older Standard (superseded by this standard)	GB/T 12964-2003
Issuing agency(ies)	State Administration for Market Regulation, China National Standardization Administration

GB/T 12964-2018: Monocrystalline silicon polished wafers

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Monocrystalline silicon polished wafers ICS 29.045 H82 National Standards of People's Republic of China Replace GB/T 12964-2003 Silicon single crystal polishing sheet Published on.2018-09-17 2019-06-01 implementation State market supervision and administration China National Standardization Administration issued

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard replaces GB/T 12964-2003 "Silicon single crystal polishing sheet", compared with GB/T 12964-2003, except editorial modification The technical changes are as follows. --- Revised the scope of application, "This standard is applicable to silicon polishing prepared by single-side polishing of Czochralski silicon single crystal grinding sheets by corrosion thinning The film is changed to "this standard is applicable to the diameter of the Czochralski method, the suspension zone melting method (including neutron enthalpy doping and gas phase doping). Polished sheet of silicon single crystal of.200 mm. Products are mainly used to make integrated circuits, discrete components, power devices, etc., or as silicon The substrate of the epitaxial wafer" (see Chapter 1, Chapter 1 of the.2003 edition). --- Revised the normative reference documents, deleted GB/T 1552, GB/T 1554, GB/T 1555, GB/T 1558, GB/T 13387, GB/T 13388, GB/T 14140, GB/T 14143, added GB/T 12965, GB/T 19921 GB/T 24578, GB/T 29507, GB/T 32279, GB/T 32280, YS/T 28, YS/T 679 (see Chapter 2,.2003) Chapter 2 of the annual edition). --- Deleted the specific terminology in the original standard and changed it to "the terms and definitions defined in GB/T 14264 apply to this document" (see Chapter 3, Chapter 3 of the.2003 edition). --- Revised the classification of silicon polishing sheets. Removed the "straight pull (CZ) and suspension zone melting (FZ) according to the silicon single crystal growth method, added "By the surface orientation, it is divided into three commonly used {100}, {110}, and {111}" (see 4.2.2, 4.1 of.2003). --- Added "diameter of silicon polishing pad, surface orientation and its deviation, reference surface length (major reference surface diameter), slit size, reference The position of the face and the position of the cut should conform to the provisions of GB/T 12965. If necessary, the supplier will provide the results of the inspections" (see 5.1). --- Removed the requirements for the length of the primary and secondary reference faces, the diameter of the cut and the main reference surface in Table 1, and revised the allowable deviation of the diameter, the thickness, and the total thickness. Degree change, warpage, and total flatness requirements, increased bending requirements, and increased silicon polishing discs with a diameter of not less than 125 mm The requirements for local flatness (see Table 1, Table 1 of the.2003 edition). --- The requirements for crystal integrity are listed in 5.1, and the test results are provided by the supplier (see 5.1, 5.3 of the.2003 edition). --- Revised the requirements for oxidative induced defects, changed to "the oxidative induced defects of silicon polishing sheets should be no more than 100/cm2, or by supply and demand The two sides negotiated to determine" (see 5.4, 5.3.2 of the.2003 edition). --- Removed the original standard surface orientation, the contents of the benchmark mark (see 5.4, 5.5 of the.2003 edition). --- Increased surface metal and bulk metal (iron) content requirements for 150mm,.200mm diameter silicon polished sheets (see 5.5, 5.6). --- Revised the requirements of the edge contour, from "the silicon polishing sheet has to be chamfered by the edge, the contour of the edge after chamfering should conform to the rules of YS/T 26 The special requirements can be determined by both parties. "The shape and size of the edge of the silicon polishing sheet should be changed. GB/T 12965, and any part of the edge profile of the silicon polishing pad is not allowed to have sharp points or protrusions, special requirements may be Determined by the supply and demand sides (see 5.7, 5.7 of the.2003 edition). --- Change the "bright spot" in the surface quality requirement to "local light scatterer (particle)" and revise the requirements of the local light scatterer (particle) Seeking (see Table 2, Table 4 of the.2003 edition). --- Revised the inspection project and changed to "Each batch of products to deal with resistivity, thickness, total thickness variation, bending, warpage, total flatness, table The surface quality (except partial light scattering in vitro) was tested. Conductivity type, radial resistivity change, local flatness, oxidative induced defect Whether the trap, surface metal, body metal (iron), edge profile, and local light scatterer (particle) are determined by negotiation between the supplier and the buyer" (see 7.3.1, 7.3.2). --- Added "oxidation induced defects, surface metals, bulk metals (iron), edge contours, local light scatterers (particles), fog, back surface The result of the inspection is determined by negotiation between the supplier and the buyer (see 7.5.2). --- Added order form (or contract) content (see Chapter 9). This standard is supported by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and National Semiconductor Equipment and Materials Standards. The Technical Subcommittee of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed. This standard was drafted. Yanyan Semiconductor Materials Co., Ltd., Shanghai Hejing Silicon Materials Co., Ltd., Zhejiang Jinrui Technology Co., Ltd. Company, Zhejiang Haina Semiconductor Co., Ltd., Zhejiang Silicon Material Quality Inspection Center, Nonferrous Metals Technology and Economic Research Institute, Tianjin Conductor Material Technology Co., Ltd. The main drafters of this standard. Sun Yan, Lu Liyan, Xu Xinhua, Zhang Haiying, Lou Chunlan, Yang Suxin, Pan Jinping, Zhang Xueyu. The previous versions of the standards replaced by this standard are. ---GB/T 12964-1996, GB/T 12964-2003. Silicon single crystal polishing sheet

1 Scope

This standard specifies the grades and classifications, requirements, test methods, inspection rules, signs, packaging, and silicon single crystal polishing sheets (referred to as silicon polishing sheets). Transportation, storage, quality certificate and order form (or contract). This standard is applicable to the diameter of not more than.200mm prepared by the Czochralski method and the suspension zone melting method (including neutron enthalpy doping and gas phase doping). Silicon single crystal polished sheet. Products are mainly used to make integrated circuits, discrete components, power devices, etc., or as a substrate for silicon epitaxial wafers.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article. Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials GB/T 2828.1-2012.Sampling procedures for sampling by sampling - Part 1 . Batch-by-batch inspections by Retrieving Quality of Acceptance (AQL) plan GB/T 4058 silicon polishing sheet test method for oxidation induced defects GB/T 6616 Semiconductor silicon wafer resistivity and silicon film sheet resistance test method Non-contact eddy current method GB/T 6618 silicon wafer thickness and total thickness variation test method GB/T 6619 silicon wafer bending test method GB/T 6620 silicon wafer warpage non-contact test method GB/T 6621 silicon wafer surface flatness test method GB/T 6624 silicon polishing sheet surface quality visual inspection method GB/T 11073 Silicon wafer radial resistivity change measurement method GB/T 12962 silicon single crystal GB/T 12965 silicon single crystal cutting sheet and abrasive sheet GB/T 14264 semiconductor material terminology GB/T 14844 semiconductor material grade representation GB/T 19921 Silicon polishing sheet surface particle test method GB/T 24578 Total reflection X-ray fluorescence spectrometry method for metal contamination on silicon wafer surface GB/T 29507 Wafer flatness, thickness and total thickness change test automatic non-contact scanning method GB/T 32279 wafer order form input specification GB/T 32280 wafer warpage test automatic non-contact scanning method YS/T 26 wafer edge contour inspection method YS/T 28 wafer packaging YS/T 679 Steady-state surface photovoltage test method for minority carrier diffusion length in extrinsic semiconductors

3 Terms and definitions

The terms and definitions defined in GB/T 14264 apply to this document.

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