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GB/T 12962-2015: Monocrystalline silicon
Status: Valid GB/T 12962: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 12962-2015 | English | 239 |
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3 days [Need to translate]
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Monocrystalline silicon
| Valid |
GB/T 12962-2015
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| GB/T 12962-2005 | English | 399 |
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3 days [Need to translate]
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Monocrystalline silicon
| Obsolete |
GB/T 12962-2005
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| GB/T 12962-1996 | English | 359 |
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3 days [Need to translate]
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Monocrystalline silicon
| Obsolete |
GB/T 12962-1996
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| GB 12962-1991 | English | 319 |
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3 days [Need to translate]
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Monocrystalline silicon
| Obsolete |
GB 12962-1991
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PDF similar to GB/T 12962-2015
Basic data | Standard ID | GB/T 12962-2015 (GB/T12962-2015) | | Description (Translated English) | Monocrystalline silicon | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H82 | | Classification of International Standard | 29.045 | | Word Count Estimation | 11,146 | | Date of Issue | 2015-12-10 | | Date of Implementation | 2017-01-01 | | Older Standard (superseded by this standard) | GB/T 12962-2005 | | Regulation (derived from) | National Standard Announcement 2015 No.38 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | GB/T 12962-2015: Monocrystalline silicon---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Monocrystalline silicon
ICS 29.045
H82
National Standards of People's Republic of China
Replacing GB/T 12962-2005
Monocrystalline silicon
Issued on. 2015-12-10
2017-01-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
This standard replaces GB/T 12962-2005 "monocrystalline silicon." This standard compared with GB/T 12962-2005, the main changes are as follows.
--- Increased diameter less than or equal to 50.8mm Czochralski Silicon and requirements (see 5.1.1);
--- Increasing the diameter of 200mm zone melting silicon single crystal and requirements (see 5.1.1);
--- Added Czochralski Silicon carrier lifetime requirements (see 5.2.1);
--- Revised the n-type high resistance silicon single crystal resistivity zone melting range requirements (see 5.2.1);
--- Increasing the doping ratio of neutron transmutation doped silicon single crystal F5 requirements (see 5.2.1);
--- Revised F10 doping ratio of neutron transmutation doping of silicon single radial change in resistivity and minority carrier lifetime requirements
(See 5.2.1);
--- Revised gas doping zone melting silicon single crystal diameter, resistivity and minority carrier lifetime and other requirements (see 5.2.1);
--- "Metal content" requirement removed "heavy boron-doped Czochralski Silicon base, the base phosphorus content provided by both parties agreed to" content (see
5.8);
--- Sampling by the text description to Table 6;
--- Increased orders content (see Chapter 9).
The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and National Semiconductor Equipment and Materials Standards
Materials Branch of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed.
This standard was drafted. there are research new materials Co., Ltd., Tianjin Central European Semiconductor Materials Technology Co., Ltd., Zhejiang Crystal Technology
Co., Ltd., Zhejiang silicon material quality inspection center, Hangzhou Haina Semiconductor Co., universal silicon peak Electronics Co., Ltd., Zhejiang
Jiangsu Jinrui Hong Technology Co., Ltd., a Shanghai-crystal silicon Material Co., Ltd., China Nonferrous Metals Industry Standards and Metrology Quality Research Institute, Guangdong
Taizhuo Optoelectronics Technology Co., Ltd.
The main drafters of this standard. Sun Yan, Zhang Guo Hu, Zhang Xue Nan, Huang Xiaorong, Chunlan floor, Wangfei Yao, Zhu Xingping, He Liangen, Xu Xinhua,
Salicin heart by Bai Ling, Li Li Yan.
This standard replaces the standards previously issued as follows.
--- GB/T 12962-1991, GB/T 12962-1996, GB/T 12962-2005.
Monocrystalline silicon
1 Scope
This standard specifies the silicon single crystal grade and classification, requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificate
And orders (or contract) content.
This standard applies to Czochralski, float zone method (including neutron transmutation doping and gas doping) is not greater than the diameter of 200mm was prepared
A silicon single crystal. Products are mainly used in the production of semiconductor components.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 1550 extrinsic conductivity type semiconductor material testing methods
GB/T 1551 silicon single crystal resistivity measuring method
GB/T 1553 germanium and silicon minority carrier lifetime measurement of photoconductivity decay method
GB/T 1554 crystallographic perfection of silicon by preferential etch test methods
GB/T 1555 to the measurement method of a semiconductor single crystal
GB/T 1557 interstitial oxygen content in the silicon crystal infrared absorption measurement method
GB/T 1558 silicon substitutional atomic carbon content by infrared absorption method
GB/T 4058 Test Method polished silicon oxide induced defects
GB/T 6616 resistivity of semiconductor silicon and silicon thin film sheet resistivity test method of non-contact eddy current method
Methods of measurement GB/T 11073-2007 radial resistivity variation on silicon
GB/T 12964 monocrystalline silicon polished wafer
GB/T 13387 and other electronic materials silicon wafer reference surface length measurement method
GB/T 13388 wafer reference surface crystallographic orientation of the X-ray test method
GB/T 14140 wafer diameter measuring method
GB/T 14264 semiconductor material terms
GB/T 14844 semiconductor material grades that way
GB/T 26067 Test Method wafer notch size
GB/T 26068 wafer carrier recombination lifetime of the non-contact microwave photoconductivity decay test method
GB/T 30453 silicon native defect map
3 Terms and Definitions
Terms and definitions GB/T 14264 and GB/T 30453 apply to this document defined.
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