|
Std ID |
Description (Standard Title) |
Detail |
|
SJ 20107-1992
|
Detail Specification for Free Connectors, Electrical, Straight, Crimp Type, Bayonet Coupling, Series Ⅱ, Classes E and T, for JY 27473
|
SJ 20107-1992
|
|
SJ 20108-1992
|
Detail Specification for Fixed Connectors Electrical, Box Mounting, Solder Contacts, Classes K and R, for JY 3102
|
SJ 20108-1992
|
|
SJ 20109-1992
|
Detail Specification for Fixed Connectors Electrical, straight, solder contacts, classes A, K, R and F, for JY 3106
|
SJ 20109-1992
|
|
SJ 20110-1992
|
Filters, quartz crystal, Type LST60MA, detail specification for
|
SJ 20110-1992
|
|
SJ 20111-1992
|
General specification for IFF airborne transponder
|
SJ 20111-1992
|
|
SJ 2011-1982
|
O-type backward wave oscillator tubes, Type BB-109 and 109A
|
SJ 2011-1982
|
|
SJ 20112-1992
|
Methods of measurement for IFF transponder
|
SJ 20112-1992
|
|
SJ 20113-1992
|
Methods of measurement for IFF interrogator
|
SJ 20113-1992
|
|
SJ 20114-1992
|
General specifications for IFF airborne interrogator
|
SJ 20114-1992
|
|
SJ 20115.10-1992
|
Environmental conditions and test methods for aircraft radar. Gun-fire vibration test
|
SJ 20115.10-1992
|
|
SJ 20115.11-1992
|
Environmental conditions and test methods for aircraft radar. Fungus test
|
SJ 20115.11-1992
|
|
SJ 20115.1-1992
|
Environmental conditions and test methods for aircraft radar General rules
|
SJ 20115.1-1992
|
|
SJ 20115.12-1992
|
Environmental conditions and test methods for aircraft radar Salt fog test
|
SJ 20115.12-1992
|
|
SJ 20115.2-1992
|
Environmental conditions and test methods for aircraft radar Temperature/altitude test
|
SJ 20115.2-1992
|
|
SJ 20115.3-1992
|
Environmental conditions and test methods for aircraft radar Temperature shock test
|
SJ 20115.3-1992
|
|
SJ 20115.4-1992
|
Environmental conditions and test methods for aircraft radar Humidity/heat alteration \ test
|
SJ 20115.4-1992
|
|
SJ 20115.5-1992
|
Environmental conditions and test methods for aircraft radar Vibration test
|
SJ 20115.5-1992
|
|
SJ 20115.6-1992
|
Environmental conditions and test methods for aircraft radar. Bump test
|
SJ 20115.6-1992
|
|
SJ 20115.7-1992
|
Environmental conditions and test methods for aircraft radar Mechanical shock test
|
SJ 20115.7-1992
|
|
SJ 20115.8-1992
|
Environmental conditions and test methods for aircraft radar Constant acceleration test
|
SJ 20115.8-1992
|
|
SJ 20115.9-1992
|
Environmental conditions and test methods for aircraft radar Transportation test
|
SJ 20115.9-1992
|
|
SJ 20116-1992
|
General specification for air warning ship borne radar
|
SJ 20116-1992
|
|
SJ 20117-1992
|
Flight test methods of air warning ship borne radar
|
SJ 20117-1992
|
|
SJ 20118-1992
|
General performance requirements and methods of measurement for digital signal processing unit of airborne fire control radar
|
SJ 20118-1992
|
|
SJ 20119-1992
|
General performance requirements and methods of measurement for transmitter unit of airborne fire control radar
|
SJ 20119-1992
|
|
SJ 20120-1992
|
General performance requirements and methods of measurement for feeder unit of airborne fire control radar
|
SJ 20120-1992
|
|
SJ 20121-1992
|
General performance requirements and methods of measurement for low-power radio frequency unit of airborne fire control radar
|
SJ 20121-1992
|
|
SJ 2012-1982
|
Power travelling wave tubes, Type B-211
|
SJ 2012-1982
|
|
SJ 20122-1992
|
General performance requirements and methods of measurement for data processing unit of airborne fire control radar
|
SJ 20122-1992
|
|
SJ 20123-1992
|
Duplex mobile radio system. Basic parameters
|
SJ 20123-1992
|
|
SJ 20124-1992
|
General specification for carbon transmitters
|
SJ 20124-1992
|
|
SJ 20125-1992
|
General specifications for anti-noise head set, receiver set and earpieces
|
SJ 20125-1992
|
|
SJ 20126-1992
|
Interoperability and performance requirement for short wave single-sideband communication equipment
|
SJ 20126-1992
|
|
SJ 20127-1992
|
Interface between short wave receivers for series asynchronous remote-control data interchange
|
SJ 20127-1992
|
|
SJ 20128-1992
|
Environmental test methods for communication electroacoustic transducers
|
SJ 20128-1992
|
|
SJ 20129-1992
|
Methods for measurement of metallic coating thickness
|
SJ 20129-1992
|
|
SJ 20130-1992
|
Test methods for adhesion of metallic coatings
|
SJ 20130-1992
|
|
SJ 20131-1992
|
Specification for military platinum coated molybdenum wires
|
SJ 20131-1992
|
|
SJ 2013-1982
|
Power travelling wave tubes, Type B-218
|
SJ 2013-1982
|
|
SJ 20132-1992
|
Phosphor Y19 for bicolor radar display tube for army
|
SJ 20132-1992
|
|
SJ 20133-1992
|
General specification for military teleprompter
|
SJ 20133-1992
|
|
SJ 20134-1992
|
Requirements of noise control for military electronic equipments
|
SJ 20134-1992
|
|
SJ 20135-1992
|
Vibration monitoring and mechanical fault diagnosis for electronic equipments
|
SJ 20135-1992
|
|
SJ 20136-1992
|
General specification for packing of military electro acoustic communication devices
|
SJ 20136-1992
|
|
SJ 20137-1992
|
Technical specifications, vibration and shock test methods for printed board assembly
|
SJ 20137-1992
|
|
SJ 20138-1992
|
Specification for neodymium-doped yttrium aluminum garnet laser rods
|
SJ 20138-1992
|
|
SJ 20139-1992
|
Technical specification for military shelter window and attachment
|
SJ 20139-1992
|
|
SJ 20140-1992
|
Shape and size of section of shaped aluminium for military shelter
|
SJ 20140-1992
|
|
SJ 20141-1992
|
Specification for thermoelectric cooling module TES1-01212TT
|
SJ 20141-1992
|
|
SJ 20142-1992
|
Specification for military Winchester disk unit of 80mm outer diameter
|
SJ 20142-1992
|
|
SJ 20143-1992
|
Specification for tungsten wires for electron devices
|
SJ 20143-1992
|
|
SJ 20144-1992
|
Specification for molybdenum rods wire and sheets for electron devices
|
SJ 20144-1992
|
|
SJ 20145-1992
|
General specification for military computer room
|
SJ 20145-1992
|
|
SJ 20146-1992
|
Generic specification for electrodeposited silver Coating
|
SJ 20146-1992
|
|
SJ 20147.1-1992
|
Measurement methods for electrodeposited silver and silver alloy coating thickness Method by the X-ray fluorescent spectrometry
|
SJ 20147.1-1992
|
|
SJ 20147.2-1992
|
Determination methods for electrodeposited silver and silver alloy coatings Determination of the presence of residual salts
|
SJ 20147.2-1992
|
|
SJ 20148-1992
|
Series programmes for military light sources
|
SJ 20148-1992
|
|
SJ 20149-1992
|
Specification for Aluminium-Metallized polyester film for capacitors
|
SJ 20149-1992
|
|
SJ 20150-1992
|
Specification for Aluminium-Metallized polypropylene film for capacitors
|
SJ 20150-1992
|
|
SJ 20151-1992
|
Specification for nickel strips for electron devices
|
SJ 20151-1992
|
|
SJ 20152-1992
|
Specification for nickel rars and nickel wires for electron devices
|
SJ 20152-1992
|
|
SJ 20153-1992
|
Channel level power control interface
|
SJ 20153-1992
|
|
SJ 20154-1992
|
Electrostatic discharge susceptibility testing for information technology equipment
|
SJ 20154-1992
|
|
SJ 20155-1992
|
General specification for radio frequency radiation absorber (microwave absorbing material)
|
SJ 20155-1992
|
|
SJ 20156-1992
|
Design guide for electromagnetic interference (EMI) reduction in power supplies
|
SJ 20156-1992
|
|
SJ 20157-1992
|
Detail specification for types JT54LS32 and JT54LS86 OR GATES of LS-TTL semiconductor integrated circuits
|
SJ 20157-1992
|
|
SJ 20158-1992
|
Detail specification for types JT54S151, JT54S153 and JT54S157 DATA SELECTORS/MULTIOLEXERS of S-TTL semiconductor integrated circuits
|
SJ 20158-1992
|
|
SJ 20159-1992
|
Detail specification for types JT54LS155 and JT54LS156 DECODERS of LS-TTL semiconductor integrated circuits
|
SJ 20159-1992
|
|
SJ 20160-1992
|
Detail specification for types JT54S194 and JT54S195 shift rfgisters of S-TTL semiconductor integrated circuits
|
SJ 20160-1992
|
|
SJ 20161-1992
|
Detail specification for types JT54LS273. JT54LS373. JT54LS374 and JT54LS377 cascadable FLIP-FLOPS of LS-TTL semiconductor integrated circuits
|
SJ 20161-1992
|
|
SJ 20162-1992
|
Detail specification for types JT54LS283 4-bit binary FULL ADDERS with fast carry of LS-TTL semiconductor integrated circuits
|
SJ 20162-1992
|
|
SJ 20163-1992
|
Detail specification of Ju8086 microprocessor for semiconductor integrated circuits
|
SJ 20163-1992
|
|
SJ 20164-1992
|
Electron tube Detail specification for radiation counter tubes of types J305βγ
|
SJ 20164-1992
|
|
SJ 20165-1992
|
Electron tube Detail specification for radiation counter tubes of types J405γ
|
SJ 20165-1992
|
|
SJ 20166-1992
|
Electron tube Detail specification for antimony Sulfide Vidicon of type SF-1213
|
SJ 20166-1992
|
|
SJ 20167-1992
|
Electron tube Detail specification for silicon-intensifier tartget camera tube of type SF-1403
|
SJ 20167-1992
|
|
SJ 20168-1992
|
Semiconductor discrete device Detail specification for type 3DK12 power switching transistor
|
SJ 20168-1992
|
|
SJ 20169-1992
|
Semiconductor discrete device Detail specification for type 3DK36 power switching transistor
|
SJ 20169-1992
|
|
SJ 20170-1992
|
Semiconductor discrete device Detail specification for type 3DK37 power switching transistor
|
SJ 20170-1992
|
|
SJ 20171-1992
|
Semiconductor discrete device Detail specification for type 3DK51 power switching transistor
|
SJ 20171-1992
|
|
SJ 20172-1992
|
Semiconductor discrete device Detail specification for type 3DK38 power swithing transistor
|
SJ 20172-1992
|
|
SJ 20173-1992
|
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2218, 3DK2218A, 3DK2219 and 3DK2219A
|
SJ 20173-1992
|
|
SJ 20174-1992
|
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2221, 3DK2221A, 3DK2222 and 3DK2222A
|
SJ 20174-1992
|
|
SJ 20175-1992
|
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918
|
SJ 20175-1992
|
|
SJ 20176-1992
|
Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440
|
SJ 20176-1992
|
|
SJ 20177-1992
|
Semiconductor discrete device Detail specification for NPN silicon low-power switching transistor for type 3CK3634~3CK3637
|
SJ 20177-1992
|
|
SJ 20178-1992
|
Semiconductor discrete device Detail specification for type 3CK38 power swithing transistor
|
SJ 20178-1992
|
|
SJ 20179-1992
|
Semiconductor discrete device Detail specification for reveres-blocking history type 3CT103
|
SJ 20179-1992
|
|
SJ 20180-1992
|
Semiconductor discrete device Detail specification for reverse-blocking history type 3CT105
|
SJ 20180-1992
|
|
SJ 20181-1992
|
Semiconductor discrete device Detail specification for reverse-blocking thyristor for type 3CT107
|
SJ 20181-1992
|
|
SJ 20182-1992
|
Semiconductor discrete device Detail specification for reverse-blocking thyristor for type 3CT682, 683, 685~692 and 3CT 5206
|
SJ 20182-1992
|
|
SJ 20183-1992
|
Semiconductor discrete device Detail specification for type 3DD6 power transistor
|
SJ 20183-1992
|
|
SJ 20184-1992
|
Semiconductor discrete device Detail specification for field-effect transistor of types CS3821, 3822, 3823
|
SJ 20184-1992
|
|
SJ 20185-1992
|
Semiconductor discrete device Detail specification for siscon voltage reference diodes for type 2DW232~236
|
SJ 20185-1992
|
|
SJ 20186-1992
|
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CW2970~3015
|
SJ 20186-1992
|
|
SJ 20187-1992
|
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550~5554
|
SJ 20187-1992
|
|
SJ 20188-1992
|
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550 through 2CZ5554
|
SJ 20188-1992
|
|
SJ 20189-1992
|
Detail specification capacitors, fixed, ceramic dielectric, established reliability, type CCK101
|
SJ 20189-1992
|
|
SJ 20190-1992
|
Detail specification capacitors, fixed, ceramic dielectric, established reliability, type CCK102
|
SJ 20190-1992
|
|
SJ 20191-1992
|
Detail specification capacitors, fixed, ceramic dielectric, established reliability, type CCK103
|
SJ 20191-1992
|