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Std ID |
Description (Standard Title) |
Detail |
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SJ 2368-1983
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Detail specification for silicon PNP low frequncy high voltage high power transistors, Type 3CD251, 3CD252 and 3CD451
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SJ 2368-1983
|
|
SJ 2369-1983
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Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD253, 3CD254 and 3CD453
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SJ 2369-1983
|
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SJ 2370-1983
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Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD255, 3CD256 and 3CD455
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SJ 2370-1983
|
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SJ 2371-1983
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Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD257, 3CD258 and 3CD457
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SJ 2371-1983
|
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SJ 2372-1983
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Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD259 and 3CD260
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SJ 2372-1983
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SJ 2373-1983
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Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD262 and 3CD462
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SJ 2373-1983
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SJ 2374-1983
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Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD264, 3CD464
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SJ 2374-1983
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SJ 2375-1983
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Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD267 and 3CD467
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SJ 2375-1983
|
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SJ 2285-1983
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Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG146
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SJ 2285-1983
|
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SJ 2286-1983
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Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG147
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SJ 2286-1983
|
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SJ 2287-1983
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Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Tuype 3DG148
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SJ 2287-1983
|
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SJ 2288-1983
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Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG149
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SJ 2288-1983
|
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SJ 2289-1983
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Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG151
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SJ 2289-1983
|
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SJ 2290-1983
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Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG151
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SJ 2290-1983
|
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SJ 2291-1983
|
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG153
|
SJ 2291-1983
|
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SJ 2292-1983
|
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG154
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SJ 2292-1983
|
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SJ 2293-1983
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Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG155
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SJ 2293-1983
|
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SJ 2294-1983
|
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG156
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SJ 2294-1983
|
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SJ 2295-1983
|
Method of accelerated life-test for receiving cathode-ray-tubes
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SJ 2295-1983
|
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SJ 2296-1983
|
Variable glass vacuum capacitors for Type CKBB400/7. 5/40
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SJ 2296-1983
|
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SJ 2299-1983
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Variable glass vacuum capacitors for Type CKBB400/7. 5/40
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SJ 2299-1983
|
|
SJ 2300-1983
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(CY3 type connecting printed circuit outlet)
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SJ 2300-1983
|
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SJ 2301-1983
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(Chinese Industry Standard)
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SJ 2301-1983
|
|
SJ 2303-1983
|
Concentric connectors, Type TX
|
SJ 2303-1983
|
|
SJ 2304-1983
|
(Chinese Industry Standard)
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SJ 2304-1983
|
|
SJ 2307.1-1983
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(MYL1 lightning protection with zinc oxide varistors)
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SJ 2307.1-1983
|
|
SJ 2307-1983
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General specification for zinc oxide varistors for use in lightning arresters
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SJ 2307-1983
|
|
SJ 2309.1-1983
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Suppressed noise zinc oxide varistors for Type MYZ1
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SJ 2309.1-1983
|
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SJ 2309-1983
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General specification for suppressed noise zinc oxide varistors
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SJ 2309-1983
|
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SJ 2311-1983
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Generic specification for environmental test equipment for electronic industry
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SJ 2311-1983
|
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SJ 2314-1983
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General specification for d. c. digital voltmeters
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SJ 2314-1983
|
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SJ 2315-1983
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Methods of measurement for d. c. digital voltmeters
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SJ 2315-1983
|
|
SJ 2316-1983
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Specification for paper stock for use in loudspeakers
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SJ 2316-1983
|
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SJ 2317-1983
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Test methods for elasticity modulus and loss factor of paper stock for loudspeakers
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SJ 2317-1983
|
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SJ 2318-1983
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Aluminium-nickel-cobalt permanent magnet for loudspeakers
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SJ 2318-1983
|
|
SJ 2319-1983
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(Electronic ceramics with aluminum oxide emission spectrometry method of impurities)
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SJ 2319-1983
|
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SJ 2320-1983
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(Electronic ceramics with titanium dioxide impurity emission spectrometry method)
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SJ 2320-1983
|
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SJ 2322-1983
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(Chinese Industry Standard)
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SJ 2322-1983
|
|
SJ 2323-1983
|
External interface for shortwave single-sideband transmitters
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SJ 2323-1983
|
|
SJ 2324-1983
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External interface for shortwave single-sideband receivers
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SJ 2324-1983
|
|
SJ 2325-1983
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Environmental test conditions and test procedures for land microwave communication equipment
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SJ 2325-1983
|
|
SJ 2326-1983
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Generic specification for high and low temperature low pressure test chambers
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SJ 2326-1983
|
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SJ 2327-1983
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Generic specification for low temperature test chambers
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SJ 2327-1983
|
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SJ 2328-1983
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Generic specification for high temperature test chambers
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SJ 2328-1983
|
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SJ 2329-1983
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Generic specification for temperature change test chambers
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SJ 2329-1983
|
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SJ 2330-1983
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Generic specification for humidity test chambers
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SJ 2330-1983
|
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SJ 2332-1983
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Methods of measurement for electrical performance of channel transission equipment for digital radio and microwave relay communication
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SJ 2332-1983
|
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SJ 2333-1983
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(Telephone model naming)
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SJ 2333-1983
|
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SJ 2334-1983
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Type designational system for telephone switchboards
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SJ 2334-1983
|
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SJ 2335-1983
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(Special telephone equipment type designation)
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SJ 2335-1983
|
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SJ 2336-1983
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(Carrier communication device type designation)
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SJ 2336-1983
|
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SJ 2337-1983
|
General specification for waveguide rectangular assemblies
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SJ 2337-1983
|
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SJ 2338-1983
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Rectangular straight waveguide assemblies
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SJ 2338-1983
|
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SJ 2339-1983
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Rectangular waveguide assemblies with 90-degree H-plane bend
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SJ 2339-1983
|
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SJ 2340-1983
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Rectangular waveguide assemblies with 90-degree E-plane bend
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SJ 2340-1983
|
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SJ 2341-1983
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Rectangular waveguide assemblies with 60-degree H-plane bend
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SJ 2341-1983
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SJ 2342-1983
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Rectangular waveguide assemblies with 60-degree E-plane bend
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SJ 2342-1983
|
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SJ 2343-1983
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Rectangular waveguide assemblies with 45-degree H-plane bend
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SJ 2343-1983
|
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SJ 2344-1983
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Rectangular waveguide assemblies with 45-degree E-plane bend
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SJ 2344-1983
|
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SJ 2345-1983
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Rectangular waveguide assemblies with twist
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SJ 2345-1983
|
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SJ 2346-1983
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General specification for rectangular waveguides with terminal loads
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SJ 2346-1983
|
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SJ 2348-1983
|
General specification for minicomputer
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SJ 2348-1983
|
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SJ 2349-1983
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Generic specification for magnetic drum memories
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SJ 2349-1983
|
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SJ 2350-1983
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(Console and end with a typewriter. General technical requirements)
|
SJ 2350-1983
|
|
SJ 2351-1983
|
Vidicons, Type SF-25
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SJ 2351-1983
|
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SJ 2352-1983
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Vidicons, Type SF-26
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SJ 2352-1983
|
|
SJ 2353-1983
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Vidicons, Type SF-27
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SJ 2353-1983
|
|
SJ 2354.10-1983
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Method of measurement for cross-light factor of PIN and avalanche photodiodes matrix
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SJ 2354.10-1983
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SJ 2354.11-1983
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Method of measurement for width of blind zone of PIN and avalanche photodiode matrix
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SJ 2354.11-1983
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SJ 2354.1-1983
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General procedures of measurement for electrical and optical parameters of PIN and avalanche photodiodes
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SJ 2354.1-1983
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SJ 2354.12-1983
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Method of measurement for temperature factor of reverse breakdown voltage of PIN and avalanche photodiodes
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SJ 2354.12-1983
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SJ 2354.13-1983
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Method of measurement for multiplication factor of PIN and avalanche photodiodes
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SJ 2354.13-1983
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SJ 2354.14-1983
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Method of measurement for excess noise factor of PIN and avalanche photodiodes
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SJ 2354.14-1983
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SJ 2354.2-1983
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Method of measurement for reverse break-down voltage of PIN and avalanche photodiodes
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SJ 2354.2-1983
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SJ 2354.3-1983
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Method of measurement for dark current of PIN and avalanche photodiodes
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SJ 2354.3-1983
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SJ 2354.4-1983
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Method of measurement for forward voltage drop of PIN and avalanche photodiodes
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SJ 2354.4-1983
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SJ 2354.5-1983
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Method of measurement for capacitance of PIN and avalanche photodiodes
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SJ 2354.5-1983
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SJ 2354.6-1983
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Method of measurement for responsivity of PIN and avalanche photodiodes
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SJ 2354.6-1983
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SJ 2354.7-1983
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Method of measurement for spectral response curve and spectral response range of PIN and avalanche photodiodes
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SJ 2354.7-1983
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SJ 2354.8-1983
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Method of measurement for pulse rise time and fall time of PIN and avalanche photodiodes
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SJ 2354.8-1983
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SJ 2354.9-1983
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Method of measurement for noise equivalent power of PIN and avalanche photodiodes
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SJ 2354.9-1983
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SJ 2355.1-1983
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General procedures of measurement for light-emitting deivces
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SJ 2355.1-1983
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SJ 2355.2-1983
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Method of measurement for forward voltage drop of light-emitting devices
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SJ 2355.2-1983
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SJ 2355.3-1983
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Method of measurement for reverse current of light-emitting devices
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SJ 2355.3-1983
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SJ 2355.4-1983
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Methods of measurement for junction capacitance of light-emitting devices
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SJ 2355.4-1983
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SJ 2355.5-1983
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Method of measurement for luminous intensity and half-intensity angle of light-emitting devices
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SJ 2355.5-1983
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SJ 2355.6-1983
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Method of measurement for luminous flux of light-emitting devices
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SJ 2355.6-1983
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SJ 2355.7-1983
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Method of measurement for peak emission wavelength and spectral radiation bandwidth of light-emitting devices
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SJ 2355.7-1983
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SJ 2356-1983
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Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD347
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SJ 2356-1983
|
|
SJ 2357-1983
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Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD149, 3CD150 and 3CD349
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SJ 2357-1983
|
|
SJ 2358-1983
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Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD151, 3CD152 and 3CD351
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SJ 2358-1983
|
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SJ 2359-1983
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Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD153, 3CD154 and 3CD353
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SJ 2359-1983
|
|
SJ 2360-1983
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Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD155, 3CD156 and 3CD355
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SJ 2360-1983
|
|
SJ 2361-1983
|
Detail specification for silicon PNP low frequency low voltage high power low frequency low voltage high power transistors, Type 3CD157, 3CD158 and 3CD357
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SJ 2361-1983
|
|
SJ 2362-1983
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Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD159 and 3CD160
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SJ 2362-1983
|
|
SJ 2363-1983
|
Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD162 and 3Cd362
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SJ 2363-1983
|
|
SJ 2364-1983
|
Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3Cd164 and 3CD364
|
SJ 2364-1983
|
|
SJ 2365-1983
|
Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD167 and 3CD367
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SJ 2365-1983
|
|
SJ 2366-1983
|
Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD447
|
SJ 2366-1983
|
|
SJ 2367-1983
|
Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD249, 3CD250 and 3CD449
|
SJ 2367-1983
|