|
Std ID |
Description (Standard Title) |
Detail |
|
GB 6218-1986
|
Blank detail specification for bipolar transistors for switching applications
|
GB 6218-1986
|
|
GB 4586-1984
|
Measuring methods for field-effect transistors
|
GB 4586-1984
|
|
GB 9494-1988
|
Detail specification for electronic component--Ambient-rated silicon rectifier diode for type 2CZ321
|
GB 9494-1988
|
|
GB 9495-1988
|
Detail specification for electronic component--Ambient-rated silicon rectifier diode for type 2CZ322
|
GB 9495-1988
|
|
GB 9496-1988
|
Detail specification for electronic component--Ambient-rated silicon rectifier diode for type 2CZ33
|
GB 9496-1988
|
|
GB 9497-1988
|
Detail specification for electronic component--Ambient-rated silicon rectifier diode for type 2CZ323
|
GB 9497-1988
|
|
GB 9498-1988
|
Detail specification for electronic component--Ambient-rated silicon rectifier diode for type 2CZ34Q
|
GB 9498-1988
|
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GB 9503-1988
|
Detail specification for electronic components--Reverse blocking triode thyristorcase-rated for type 3CT320
|
GB 9503-1988
|
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GB 9504-1988
|
Detail specification for electronic components--Avalanche triode thyristor case-rated for type 3CT315
|
GB 9504-1988
|
|
GB 9514-1988
|
Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD 203
|
GB 9514-1988
|
|
GB 9523-1988
|
Detail specification for electronic component--Silicon single phase bridge rectifier type for QL 62
|
GB 9523-1988
|
|
GB 8558-1987
|
Silicon switching rectifier diode for type 2CN31D
|
GB 8558-1987
|
|
GB 4023-1986
|
Semiconductor discrete devices--Part 2: Rectifier diodes
|
GB 4023-1986
|
|
GB 6259-1986
|
Detail specification for electronic components Silicon fast-switching rectifier diode for type 2CN41
|
GB 6259-1986
|
|
GB 10271-1988
|
Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG162
|
GB 10271-1988
|
|
GB 10272-1988
|
Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG182
|
GB 10272-1988
|
|
GB 10273-1988
|
Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG140
|
GB 10273-1988
|
|
GB 10279-1988
|
Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG3130
|
GB 10279-1988
|
|
GB 9500-1988
|
Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG107
|
GB 9500-1988
|
|
GB 9507-1988
|
Detail specification for electronic components--Ambient-rated transistor for type 3CG844 silicon PNP for high frequency amplification
|
GB 9507-1988
|
|
GB 9508-1988
|
Detail specification for electronic components--Ambient-rated transistor for type 3CG778 silicon PNP for high frequency amplification
|
GB 9508-1988
|
|
GB 9509-1988
|
Detail specification for electronic components--Ambient-rated transistor for type 3CG778 silicon PNP for high frequency amplification
|
GB 9509-1988
|
|
GB 9510-1988
|
Detail specification for electronic components--Ambient-rated transistor for type 3DG2271 silicon NPN for high frequency amplification
|
GB 9510-1988
|
|
GB 9511-1988
|
Detail specification for electronic components--Case-rated transistor for type 3DD401 silicon NPN for low frequency amplification
|
GB 9511-1988
|
|
GB 9512-1988
|
Detail specification for electronic components--Case-rated transistor for type 3CD546 silicon PNP for low frequency amplification
|
GB 9512-1988
|
|
GB 9513-1988
|
Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD100C
|
GB 9513-1988
|
|
GB 9515-1988
|
Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD205A
|
GB 9515-1988
|
|
GB 9516-1988
|
Detail specification for electronic components high-frequency amplification transistor for silicon NPN ambient-rated for type 3DG 2636
|
GB 9516-1988
|
|
GB 9517-1988
|
Detail specification for electronic components high-frequency amplification transistor for silicon NPN ambient-rated for type 3DG3077
|
GB 9517-1988
|
|
GB 9518-1988
|
Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD204
|
GB 9518-1988
|
|
GB 9519-1988
|
Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD207
|
GB 9519-1988
|
|
GB 9520-1988
|
Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD207
|
GB 9520-1988
|
|
GB 9521-1988
|
(Detailed specifications of electronic components. 3DD325 silicon NPN. Environmental rated low frequency amplifying transistor (for certification))
|
GB 9521-1988
|
|
GB 9522-1988
|
Detail specification for electronic components--Ambie-nt-rated transistor for type 3DG1815 silicon NPN for high frequency amplification
|
GB 9522-1988
|
|
GB 7147-1987
|
Detail specification for electronic components--Ambint-rated bipolar transistors for high frequency amplification type 3DG80
|
GB 7147-1987
|
|
GB 7148-1987
|
Detail specification for electronic components--Single-gate junction type field-effect transistors of types CS111, CS112, CS113, CS114, CS115, CS116
|
GB 7148-1987
|
|
GB 7149-1987
|
Detail specification for electronic components--Bipolar transistors for switching amplification types 3DK105A, 3DK105B
|
GB 7149-1987
|
|
GB 7150-1987
|
Detail specification for electronic components--Bipolar transistors for switching amplification types 3DK107A, 3DK107B
|
GB 7150-1987
|
|
GB 7151-1987
|
Detail specification for electronic components--Ambient-rated bipolar transistors for high-frequency amplification type 3DG131A, 3DG131B, 3DG131C
|
GB 7151-1987
|
|
GB 7577-1987
|
Blank detail specification for case-rated bipolar transistors for low-frequency amplification
|
GB 7577-1987
|
|
GB 7578-1987
|
Detail specification for electronic component--Case-rated bipolar transistor for types 3DA150B, 3DA150C for high-frequency amplification
|
GB 7578-1987
|
|
GB 7579-1987
|
Detail specification for electronic component--Case-rated bipolar transistor for type 3DD201 for low-frequency amplification
|
GB 7579-1987
|
|
GB 7580-1987
|
Detail specification for electronic components--Case-rated bipolar transistors for low-frequency amplification, type 3DD102B
|
GB 7580-1987
|
|
GB 6353-1986
|
Detail specification for electronic component--Forward AGC low-noise transistor for high-frequency amplification--Type 3 DG79
|
GB 6353-1986
|
|
GB 6354-1986
|
Glass passivated high voltage rectifier silicon stack for types 2CL24, 2CL25, 2CL27 and 2CL29
|
GB 6354-1986
|
|
GB 6355-1986
|
Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3CG21B, 3CG21C
|
GB 6355-1986
|
|
GB 6356-1986
|
Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3CX201A, 3CX201B, 3CX201C
|
GB 6356-1986
|
|
GB 6357-1986
|
Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3DX201A, 3DX201B, 3DX201C
|
GB 6357-1986
|
|
GB 4587-1984
|
Measuring methods for bipolar transistors
|
GB 4587-1984
|
|
GB 9499-1988
|
Detail specification for electronic component silicon switching diode for type 2CK120
|
GB 9499-1988
|
|
GB 9524-1988
|
Detail specification for electronic component--Silicon switching diodes for types 2CK111 2CK112 and 2CK113
|
GB 9524-1988
|
|
GB 9525-1988
|
Detail specification for electronic component--Silicon switching diodes for types 2CK111 2CK112 and 2CK113
|
GB 9525-1988
|
|
GB 9526-1988
|
Detail specification for electronic component--Silicon turing variable capacitance diodes for types 2CC22 and 2CC27
|
GB 9526-1988
|
|
GB 9527-1988
|
Detail specification for electronic component--Silicon turing variable capacitance diodes for types 2cc23 and 2cc28
|
GB 9527-1988
|
|
GB 9528-1988
|
Detail specification for electronic component--Silicon frequency modulated variable capacitance diodes for types 2CC24 and 2CC29
|
GB 9528-1988
|
|
GB 9529-1988
|
Detail specification for electronic component--Silicon frequency modulated variable capacitance diodes for types 2CC24 and 2CC29
|
GB 9529-1988
|
|
GB 9595-1988
|
Detail specification for electronic component--Semiconductor integrated circuit--cw574cs voltage stabilizer for electronic tuner
|
GB 9595-1988
|
|
GB 9596-1988
|
(Detailed specifications of electronic components. 2CW380 ~ 411 silicon diode voltage regulator (for certification))
|
GB 9596-1988
|
|
GB 7152-1987
|
Detail specification for electronic components--Switching rectifier diodes for types 2CZ201, 2CZ202 and 2CZ203
|
GB 7152-1987
|
|
GB 6571-1986
|
Measuring methods for low-power signal diodes, voltage reference diodes and voltage regulator diodes
|
GB 6571-1986
|
|
GB 6802-1986
|
Detail specification for electronic component--Glass passivated high voltage rectifier silicon stack for types 2CL61, 2CL62, 2CL63, 2CL64, 2CL65, 2CL66, 2CL67, 2CL68
|
GB 6802-1986
|
|
GB/Z 20283-2006
|
Information security technology -- Guide for the production of Protection Profiles and Security Targets, NEQ
|
GB/Z 20283-2006
|
|
GB 11499-1989
|
Letter symbols for discrete semiconductor devices
|
GB 11499-1989
|
|
GB 6801-1986
|
Reference methods of measurement for semiconductor devices
|
GB 6801-1986
|
|
GB 4937-1985
|
Mechanical and climatic test methods for discrete semiconductor devices
|
GB 4937-1985
|
|
GB 8555-1987
|
Variable ceramic vacuum capacitors of type CKTB 400/7. 5/60
|
GB 8555-1987
|
|
GB 6428-1986
|
Methods of the measurement for hydrogen thyratron tubes
|
GB 6428-1986
|
|
GB 3213-1982
|
Methods of measurement of thyratrons and gas-filled rectifier tubes
|
GB 3213-1982
|
|
GB 27701-2011
|
Mechanical safety of cathode ray tubes
|
GB 27701-2011
|
|
GB 11484-1989
|
Dimensions of reference gauges for cathode-ray tubes
|
GB 11484-1989
|
|
GB 11485-1989
|
Preparation of outline drawings of cathode-ray tubes
|
GB 11485-1989
|
|
GB 9365-1988
|
Performance requirements for camera tube yoke assemblies
|
GB 9365-1988
|
|
GB 9366-1988
|
Performance requirements for camera tube yoke assemblies
|
GB 9366-1988
|
|
GB 9585-1988
|
(Cathode ray tube electrostatic deflection pole naming)
|
GB 9585-1988
|
|
GB 8556-1987
|
Defect criteria in useful screen area for cathode ray tubes
|
GB 8556-1987
|
|
GB 8557-1987
|
Inspection standards for glass bulbs for cathode ray tubes
|
GB 8557-1987
|
|
GB 5998-1986
|
Methods of measurement of colour picture tubes
|
GB 5998-1986
|
|
GB 6267-1986
|
Detail specification for electronic components--Colour picture tube of type 37SX101Y22-DC01
|
GB 6267-1986
|
|
GB 6268-1986
|
Detail specification for electronic components--Colour picture tube of type 56SX101Y22-DC03
|
GB 6268-1986
|
|
GB 6585-1986
|
Test method for general purpose cathode-ray oscilloscopes
|
GB 6585-1986
|
|
GB 6586-1986
|
Specification of general purpose cathode-ray oscilloscopes
|
GB 6586-1986
|
|
GB 7018-1986
|
Detail specification for electronic component--Black-and-white picture tube of type 35SX 5B
|
GB 7018-1986
|
|
GB 3790-1983
|
Methods of measurement of fluorescent display tubes
|
GB 3790-1983
|
|
GB 9042-1988
|
Specification for type EY501 power travelling wave tube
|
GB 9042-1988
|
|
GB 9043-1988
|
General technical requirements of gas discharge tubes for the over-voltage protection of telecommunications installations
|
GB 9043-1988
|
|
GB 4777-1984
|
Colour codes for wire leads of microwave devices
|
GB 4777-1984
|
|
GB 11448-1989
|
Detail specification for electronic components electronic tube of type FC-306
|
GB 11448-1989
|
|
GB 11488-1989
|
Detail specification for electronic components--Electronic tube of type FU-250F
|
GB 11488-1989
|
|
GB 11489-1989
|
Detail specification for electronic components--Electronic tube of type FU-100F
|
GB 11489-1989
|
|
GB 7273.1-1987
|
Measurement of the electrical properties of disk-seal tubes--General
|
GB 7273.1-1987
|
|
GB 7273.2-1987
|
Measurements of the electrical properties of disk-seal tubes--Measuring methods of the frequency-response characteristic
|
GB 7273.2-1987
|
|
GB 7273.3-1987
|
Measurements of the electrical properties of disk-seal tubes--Measuring methods of the frequency position
|
GB 7273.3-1987
|
|
GB 7273.4-1987
|
Measurements of the electrical properties of disk-seal tubes--Measuring methods of resonator unloaded Q
|
GB 7273.4-1987
|
|
GB 7273.5-1987
|
Measurements of the electrical properties of disk-seal tubes--Measuring methods of self-neutralization frequency
|
GB 7273.5-1987
|
|
GB 7273.6-1987
|
Measurements of the electrical properties of disk-seal tubes--Measuring methods of the power gain
|
GB 7273.6-1987
|
|
GB 7273.7-1987
|
Measurements of the electrical properties of disk-seal tubes--Measuring methods of AM-PM conversion coefficient
|
GB 7273.7-1987
|
|
GB 7273.8-1987
|
Measurements of the electrical properties of disk-seal tubes--Measuring methods of three tone inter-modulation distortion
|
GB 7273.8-1987
|
|
GB 11032-1989
|
Metal oxide surge arresters without gaps for a. c. systems
|
GB 11032-1989
|
|
GB 11486-1989
|
Measuring methods of the heater or filament current and voltage for electronic tubes
|
GB 11486-1989
|
|
GB 1956-1989
|
The type designation for electron tubes
|
GB 1956-1989
|