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Std ID |
Description (Standard Title) |
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SJ 50033/169-2004
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Semiconductor discrete devices. Detail specification for type 3DA510 silicon microwave pulse power transistor
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SJ 50033/163-2003
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Semiconductor discrete device. Detail specification of type 3DK457 for power switching transistors
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SJ 50033/145-2000
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Semiconductor discrete devices. Detail specification for type 3DA503 silicon microwave pulse power transistor
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SJ 50033/146-2000
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Semiconductor discrete devices. Detail specification for type 3DA601 C band silicon bipolar power transistor
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SJ 50033/148-2000
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Semiconductor discrete devices. Detail specification for type 3DK35B~F power switching transistors
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SJ/T 11225-2000
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Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor
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SJ/T 11226-2000
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Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor
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SJ/T 11227-2000
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Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor
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SJ 50033/140-1999
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Semiconductor discrete devices. Detail specification for type 3DA502 silicon microwave pulse power transistor
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SJ 50033/129-1997
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Semiconductor discrete devices. Detail specification for type 3DD155 low-frequency and high - Power transistor
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SJ 50033/130-1997
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Semiconductor discrete devices. Detail specification for type 3DD159 low - Frequency and high - Power transistor
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SJ 50033/131-1997
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Semiconductor discrete devices. Detail specification for type 3DD157 low - Frequency and high - Power transistor
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SJ 50033/132-1997
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Semiconductor discrete devices. Detail specification for type 3DD260 low - Frequency and high - Power transistor
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SJ 50033/134-1997
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Semiconductor discrete devices. Detail specification for type 3DD167 low - Frequency and high - Power transistor
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SJ 50033/103-1996
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Semiconductor discrete device. Detail specification for type 3DA89 high-frequency power transistor
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SJ 50033/104-1996
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Semiconductor discrete device. Detail specification for type 3DK002 power switching transistor
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SJ 50033/105-1996
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Semiconductor discrete device Detail specification for type 3DK404 power switching transistor
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SJ 50033/106-1996
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Semiconductor discrete device. Detail specification for type CS203 GaAs microwave low noise field effect transistor
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SJ/T 10788-1996
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Detailed specifications for electronic components - 3DG79 forward AGC low-noise transistor for high-frequency (Applicable for certification)
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SJ/T 10789-1996
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Detailed specifications for electronic components - 2CL24, 2CL25, 2CL27 and 2CL29 glass passivated and encapsulated high voltage silicon stacks (Applicable for certification)
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SJ/T 10790-1996
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Detailed specifications for electronic components - 3CG21B and 3CG21C ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
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SJ/T 10791-1996
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Detailed specifications for electronic components - 3CX2014A, 3CX201B and 3CX201C ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
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SJ/T 10792-1996
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Detailed specifications for electronic components - 33DX201A, 3DX201B and 3DX201C ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
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SJ/T 10833-1996
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Detailed specifications for electronic components - 3DG80 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
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SJ/T 10834-1996
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Detailed specifications for electronic components - CS111, CS112, CS113, CS114, CS115 and CS116 single-gate junction field-effect transistors (Applicable for certification)
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SJ/T 10835-1996
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Detailed specifications for electronic components - 3DK105A and 3DK105B bipolar switching transistors (Applicable for certification)
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SJ/T 10836-1996
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Detailed specifications for electronic components - 3DK107A and 3DK107B bipolar switching transistors (Applicable for certification)
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SJ/T 10837-1996
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Detailed specifications for electronic components -3DG131A, 3DG131B and 3DG131C ambient-rated bipolar transistors for high frequency amplification (Applicable for certification)
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SJ/T 10885-1996
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Detailed specifications for electronic components -3DA150B and 3DA150C bipolar transistors for high frequency amplification case (Applicable for certification)
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SJ/T 10886-1996
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Detailed specifications for electronic components - 3DD201 bipolar transistors for low frequency amplification case (Applicable for certification)
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SJ/T 10887-1996
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Detailed specifications for electronic components -3DD102B bipolar transistors for low frequency amplification case (Applicable for certification)
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SJ/T 10955-1996
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Detailed specifications for electronic components - 3DG107 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
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SJ/T 10960-1996
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Detailed specifications for electronic components - 3CG844 silicon PNP ambient-rated transistors for high frequency amplification
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SJ 1943-1981
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Detail specification for high voltage silicon rectifier stacks, Type 2CL12~20 and 2DL12~20
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SJ 1944-1981
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Detail specification for high voltage silicon rectifier stacks, Type 2CL30~33, 2DL30~33, 2CL40~43 and 2DL40~43
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SJ 1945-1981
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Detail specification for silicon damper diodes, Types 2CN1D~2D, 2DN1D~2D, 2CN3D~3K, 2DN3D~3K, 2CN6D~6K and 2DN6D~6K
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SJ 1947-1981
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Detail specification for silicon power rectifier diodes, Type 2CZ32B, 2DZ32B, 2CZ33B and 2DZ33B
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SJ 1948-1981
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Detail specification for high frequency rectifier diodes, Types 2CZ90D~90J, 2DZ90D~90J, 2CZ91D~91J, 2DZ91D~91J, 2CZ92D~92J and 2DZ92D~92J
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SJ 1487-1979
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Detail specification for reverse blocking high-frequency thyristors
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SJ 1488-1979
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Method of measurement for rated high-frequency on-state mean current Ir of reverse blocking high-frequency thyristors
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SJ 1130-1977
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Detail specification for high-voltage silicon rectifier stacks, Type 2DL51~56 and 2CL51~56
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SJ 1102-1976
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Detail specification for general-purpose reverse blocking thyristors (general-purpose controlled rectifiers)
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SJ/T 11765-2020
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(Testing method for low frequency noise parameters of transistors)
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SJ/T 1472-2016
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(Discrete semiconductor devices 3CG110 high frequency low power silicon PNP transistor detailed specification)
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SJ/T 1477-2016
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(Discrete semiconductor devices 3CG120 high frequency low power silicon PNP transistor detailed specification)
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SJ/T 1480-2016
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(Discrete semiconductor devices 3CG130 high frequency low power silicon PNP transistor detailed specification)
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SJ/T 1486-2016
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(Discrete semiconductor devices 3CG180 silicon PNP frequency high power transistor backpressure small detail specification)
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SJ/T 1826-2016
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(Semiconductor discrete device 3DK100 silicon NPN low power switching transistor detailed specification)
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SJ/T 1830-2016
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(Semiconductor discrete device 3DK101 silicon NPN low power switching transistor detailed specification)
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SJ/T 1831-2016
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(Semiconductor discrete device 3DK28 silicon NPN low power switching transistor detailed specification)
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SJ/T 1832-2016
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(Semiconductor discrete device 3DK102 silicon NPN low power switching transistor detailed specification)
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SJ/T 1833-2016
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(Semiconductor discrete device 3DK103 silicon NPN low power switching transistor detailed specification)
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SJ/T 1834-2016
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(Semiconductor discrete device 3DK104 silicon NPN low power switching transistor detailed specification)
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SJ/T 1838-2016
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(Semiconductor discrete device 3DK29 silicon NPN low power switching transistor detailed specification)
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SJ/T 1839-2016
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(Semiconductor discrete device 3DK108 silicon NPN low power switching transistor detailed specification)
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SJ 50033/170-2007
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Semiconductro discrete devices. Detail specification for type 3DA516 silicon microwave pulse power transistor
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SJ 50033/171-2007
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Semiconductro discrete devices. Detail specification for type 3DA518 silicon microwave pulse power transistor
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SJ 50033/172-2007
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Semiconductro discrete devices. Detail specification for type 3DA519 silicon microwave pulse power transistor
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SJ 50033/173-2007
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Semiconductro discrete devices. Detail specification for type 3DA520 silicon microwave pulse power transistor
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SJ 50033/174-2007
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Semiconductro discrete devices. Detail specification for type 3DA521 silicon microwave pulse power transistor
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SJ 50033/175-2007
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Semiconductro discrete devices. Detail specification for type 3DA522 silicon microwave pulse power transistor
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SJ 50033/176-2007
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Semiconductro discrete devices. Detail specification for type 3DA523 silicon microwave pulse power transistor
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SJ 50033/166-2004
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Semiconductor discrete devices. Detail specification for type 3DA507 silicon microwave pulse power transistor
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SJ 50033/167-2004
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Semiconductor discrete devices. Detail specification for type 3DA508 silicon microwave pulse power transistor
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SJ 50033/168-2004
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Semiconductor discrete devices. Detail specification for type 3DA509 silicon microwave pulse power transistor
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SJ/T 10961-1996
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Detailed specifications for electronic components - 3CG778 silicon PNP ambient-rated transistors for high frequency amplification (Applicable for certification)
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SJ/T 10962-1996
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Detailed specifications for electronic components - 3DA1514 silicon NPN ambient-rated transistors for high frequency amplification (Applicable for certification)
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SJ/T 10963-1996
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Detailed specifications for electronic components - 3DG2271 silicon NPN ambient-rated transistors for high frequency amplification (Applicable for certification)
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SJ/T 10964-1996
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Detailed specifications for electronic components - 3DD401 silicon NPN case-rated transistors for low frequency amplification (Applicable for certification)
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SJ/T 10965-1996
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Detailed specifications for electronic components - 3CD546 silicon NPN case-rated transistors for low frequency amplification (Applicable for certification)
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SJ/T 10966-1996
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Detailed specifications for electronic components - 3DD100C silicon NPN case-rated transistors for low frequency amplification (Applicable for certification)
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SJ/T 10968-1996
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Detailed specifications for electronic components - 3DD205A silicon NPN case-rated transistors for high frequency amplification (Applicable for certification)
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SJ/T 10969-1996
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Detailed specifications for electronic components - 3DG2636 silicon NPN ambient-rated transistors for high frequency amplification (Applicable for certification)
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SJ/T 10970-1996
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Detailed specifications for electronic components - 3DG3077 silicon NPN ambient-rated transistors for high frequency amplification (Applicable for certification)
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SJ/T 10971-1996
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Detailed specifications for electronic components - 3DD204 silicon NPN case-rated transistors for low frequency amplification (Applicable for certification)
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SJ/T 10972-1996
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Detailed specifications for electronic components - 3DD207 silicon NPN case-rated transistors for low frequency amplification (Applicable for certification)
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SJ/T 10973-1996
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Detailed specifications for electronic components - 3DD200 bipolar transistors for silicon NPN low frequency amplification case (Applicable for certification)
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SJ/T 10974-1996
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Detailed specifications for electronic components - 3DD325 silicon NPN ambient-rated transistors for low frequency amplification (Applicable for certification)
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SJ/T 10975-1996
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Detailed specifications for electronic components - 3CG1825 silicon NPN ambient-rated transistors for high frequency amplification (Applicable for certification)
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SJ/T 11052-1996
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Detailed specifications for electronic components - 3DG162 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
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SJ/T 11053-1996
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Detailed specifications for electronic components - 3DG182 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
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SJ/T 11054-1996
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Detailed specifications for electronic components - 3DG140 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
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SJ/T 11060-1996
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Detailed specifications for electronic components - 3DG3130 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
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SJ 50033/59-1995
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Semiconductor discrete device. Detail specification for type 3DK39 power switching transistor
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SJ 50033/60-1995
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Semiconductor discrete device. Detail specification for type 3DK40 power switching transistor
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SJ 50033/61-1995
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Semiconductor discrete device. Detail specification for type 3DK6547 high. Voltage and power switching transistor
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SJ 50033/62-1995
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Semiconductor discrete device Detail specification for type 3DK406 high. Voltage and power switching transistor
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SJ 50033/63-1995
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Semiconductor discrete device. Detail specification for type 3CD020 Low. Frequency and high. Power transistor
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SJ 50033/64-1995
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Semiconductor discrete device. Detail specification for type 3CD010 Low. Frequency and high. Power transistor
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SJ 50033/65-1995
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Semiconductor discrete device. Detail specification for type 3DD175 Low. Frequency and high. Power transistor
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SJ 50033/66-1995
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Semiconductor discrete device. Detail specification for type 3CD880 Low. Frequency and high. Power transistor
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SJ 50033/67-1995
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Semiconductor discrete device. Detail specification for type 3CD103 High. Voltage low. Frequency and high. Power transistor
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SJ 50033/68-1995
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Semiconductor discrete device. Detail specification for type BT51 NPN silicon small power difference matchen - Pair transistor
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SJ 50033/74-1995
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Semiconductor discrete device. Detail specification for type 3DA325 silicon microwave power tansistor
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SJ 50033/75-1995
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Semiconductor discrete device. Detail specification for type 3DG135 Silicon ultra high frequency low-power tansistor
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SJ 50033/76-1995
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Semiconductor discrete devices. Detail specification for type 3DG218 Silicon microwave low-noise tansistor
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SJ 50033/77-1995
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Semiconductor discrete devices. Detail specification for type 3DA331 Silicon microwave power tansistor
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SJ 50033/78-1995
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Semiconductor discrete devices. Detail specification for type CS0464 GaAs microwave FET
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SJ 50033/79-1995
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Semiconductor discrete devices. Detail specification for type CS0536 GaAs microwave power FET
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SJ 50033/80-1995
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Semiconductor discrete devices. Detail specification for type CS0513 GaAs microwave FET
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