SJ/T 1832-2016 PDF English
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SJ/T 1832: Historical versions
| Std ID | Version | USD | Buy | Deliver [PDF] in | Title (Description) |
| SJ/T 1832-2016 | English | 259 | Add to Cart | 3 days [Need to translate] | (Semiconductor discrete device 3DK102 silicon NPN low power switching transistor detailed specification) |
| SJ 1832-1981 | English | 159 | Add to Cart | 2 days [Need to translate] | Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK102 |
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Basic data
| Standard ID | SJ/T 1832-2016 (SJ/T1832-2016) |
| Description (Translated English) | (Semiconductor discrete device 3DK102 silicon NPN low power switching transistor detailed specification) |
| Sector / Industry | Electronics Industry Standard (Recommended) |
| Classification of Chinese Standard | L42 |
| Word Count Estimation | 11,176 |
| Date of Issue | 2016-04-05 |
| Date of Implementation | 2016-09-01 |
| Older Standard (superseded by this standard) | SJ 1832-1981 |
| Regulation (derived from) | The Ministry of Industry and Notice No. 2016 in 2016; industry standard record announcement 2016 No. 7 (total 199) |
| Issuing agency(ies) | Ministry of Industry and Information Technology |
| Summary | This standard specifies the external dimensions, maximum ratings and electrical characteristics, test conditions and inspection requirements of the 3DK102 type NPN device. |