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GB/T 41652-2022: Silicon electrode and silicon ring for plasma etching machine
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 41652-2022 | English | 179 |
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Silicon electrode and silicon ring for plasma etching machine
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GB/T 41652-2022
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Basic data | Standard ID | GB/T 41652-2022 (GB/T41652-2022) | | Description (Translated English) | Silicon electrode and silicon ring for plasma etching machine | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H82 | | Word Count Estimation | 8,827 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 41652-2022: Silicon electrode and silicon ring for plasma etching machine---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Silicon electrode and silicon ring for plasma etching machine
ICS 29.045
CCSH82
National Standards of People's Republic of China
Silicon electrode and silicon ring for etching machine
Published on 2022-07-11
2023-02-01 Implementation
State Administration for Market Regulation
Released by the National Standardization Administration
foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules of Standardization Documents"
drafted.
Please note that some content of this document may be patented. The issuing agency of this document assumes no responsibility for identifying patents.
This document is jointly developed by the National Standardization Technical Committee for Semiconductor Equipment and Materials (SAC/TC203) and the National Standard for Semiconductor Equipment and Materials
The material sub-technical committee (SAC/TC203/SC2) of the Chemical Technology Committee jointly proposed and managed it.
This document is drafted by. Youyan Semiconductor Silicon Materials Co., Ltd., Shandong Youyan Semiconductor Materials Co., Ltd., New Micron (Suzhou) Semiconductor
Body Technology Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd.
The main drafters of this document. Ku Liming, Sun Yan, Yan Zhirui, Zhang Guohu, Xia Qiuliang, Pan Jinping.
Silicon electrode and silicon ring for etching machine
1 Scope
This document specifies the technical requirements, test methods, inspection rules, marking, packaging, transportation, storage and shipment of silicon electrodes and silicon rings for etching machines.
line file and the contents of the order form.
This document is applicable to silicon electrodes and silicon rings with a diameter of.200mm~450mm for etching machines processed by p< 100> Czochralski silicon single crystal.
2 Normative references
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, dated citations
documents, only the version corresponding to that date applies to this document; for undated references, the latest edition (including all amendments) applies to
this document.
GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials
GB/T 1551 Determination of the resistivity of silicon single crystal - four-point probe method and two-point direct current method
GB/T 1554 Silicon Crystal Integrity Chemical Preferential Corrosion Inspection Method
GB/T 1555 Method for Determination of Crystal Orientation of Semiconductor Single Crystal
GB/T 1557 Infrared absorption measurement method of interstitial oxygen content in silicon crystals
GB/T 1558 Infrared Absorption Measurement Method of Substituted Carbon Atom Content in Silicon
GB/T 6624 Visual inspection method for the surface quality of silicon polished wafers
GB/T 11073 Measurement method of radial resistivity change of silicon wafer
GB/T 14264 Terms of Semiconductor Materials
GB/T 29505 Surface roughness measurement method of flat surface of silicon wafer
3 Terms and Definitions
The terms and definitions defined in GB/T 14264 and the following apply to this document.
3.1
flatness
The difference between the maximum value and the minimum value of the silicon electrode or silicon ring thickness.
4 Technical requirements
4.1 Electrical parameters
The electrical parameters of the silicon electrode and silicon ring should meet the requirements in Table 1.
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