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GB/T 30652-2023: Trichlorosilane for silicon epitaxial
Status: Valid GB/T 30652: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 30652-2023 | English | 189 |
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Trichlorosilane for silicon epitaxial
| Valid |
GB/T 30652-2023
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| GB/T 30652-2014 | English | 239 |
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Trichlorosilane for silicon epitaxial
| Obsolete |
GB/T 30652-2014
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PDF similar to GB/T 30652-2023
Basic data | Standard ID | GB/T 30652-2023 (GB/T30652-2023) | | Description (Translated English) | Trichlorosilane for silicon epitaxial | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H83 | | Classification of International Standard | 29.045 | | Word Count Estimation | 10,132 | | Date of Issue | 2023-08-06 | | Date of Implementation | 2024-03-01 | | Older Standard (superseded by this standard) | GB/T 30652-2014 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 30652-2023: Trichlorosilane for silicon epitaxial---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 29.045
CCSH83
National Standards of People's Republic of China
Replace GB/T 30652-2014
Trichlorosilane for silicon epitaxy
Published on 2023-08-06
2024-03-01 Implementation
State Administration for Market Regulation
Released by the National Standardization Administration Committee
Foreword
This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents"
Drafting.
This document replaces GB/T 30652-2014 "Trichlorosilane for Silicon Epitaxy". Compared with GB/T 30652-2014, except for structural adjustments and
In addition to editorial changes, the main technical changes are as follows.
a) Changed the scope of application (see Chapter 1, Chapter 1 of the.2014 edition);
b) Added a chapter on terms and definitions (see Chapter 3);
c) Changed some technical index requirements (see 4.1, 3.2 of the.2014 version);
d) Added test methods for some projects (see Chapter 5, Chapter 4 of the.2014 edition);
e) The regulations for group batching have been changed (see 6.2, 5.2 of the.2014 version);
f) Added inspection items (see 6.3);
g) Changed the requirements for sampling and sample preparation (see 6.4, 5.3 of the.2014 edition);
h) The judgment of inspection results has been changed (see 6.5,.2014 version 5.4);
i) Changed the requirements for marking (see 7.1, 6.1 of the.2014 version);
j) Changed the requirements for marking, packaging, transportation, storage, etc. (see Chapter 7, Chapter 6 of the.2014 edition).
Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents.
This document is jointly developed by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards
It was jointly proposed and coordinated by the Materials Sub-Technical Committee of the Chemistry Technical Committee (SAC/TC203/SC2).
This document was drafted by. Luoyang China Silicon High-tech Co., Ltd., Nonferrous Metals Technology and Economic Research Institute Co., Ltd., Shanghai Yibo Gas
Body Co., Ltd., Nanjing Guosheng Electronics Co., Ltd., Tangshan Sanfu Electronic Materials Co., Ltd., Shanghai Xinsheng Semiconductor Technology Co., Ltd., Shanghai
Jingmeng Silicon Materials Co., Ltd., Xinjiang Daqo New Energy Co., Ltd., Shaanxi Nonferrous Tianhongruike Silicon Materials Co., Ltd., Wuhan New
Silicon Technology Qianjiang Co., Ltd., Yichang CSG Silicon Materials Co., Ltd., China Jinghua (Tianjin) Semiconductor Materials Co., Ltd., Haohua Gas Co., Ltd.
Company, Xinjiang Xinte New Energy Materials Testing Center Co., Ltd., Qinghai AVIC Silicon Materials Co., Ltd., Qinyang Guoshun Silicon Source Optoelectronic Gas Co., Ltd.
Company, Jiangxi Chenguang New Materials Co., Ltd.
The main drafters of this document. Wan Ye, Zhao Xiong, Yan Dazhou, Liu Jianhua, Zhang Yuanyuan, Li Suqing, Li Jianxin, Li Feiming, Feng Yongping, Sun Renjing,
Zhang Bin, Gu Guangan, Yu Shenghai, Deng Yuanhong, Xu Yan, Li Kaidong, Liu Wenming, Li Mingda, Fu Mengyue, Qiu Yanmei, Bian Hongli, Shi Juntao, Liang Qiuhong.
This document was first published in.2014 and this is the first revision.
Trichlorosilane for silicon epitaxy
1 Scope
This document specifies the technical requirements, test methods, inspection rules, marking, packaging, transportation and storage of trichlorosilane (SiHCl3) for silicon epitaxy.
Deposit, accompanying documents and order form contents.
This document applies to trichlorosilane for silicon epitaxy (hereinafter referred to as the product) produced by refining and purifying trichlorosilane as raw material.
2 Normative reference documents
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations
For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to
this document.
GB 190 Dangerous goods packaging markings
GB/T 191 Packaging, storage and transportation pictorial mark
GB/T 1551 Determination of resistivity of silicon single crystal. direct current four-probe method and direct current two-probe method
GB/T 3723 General Safety Principles for Sampling Industrial Chemical Products
GB 12463 General technical conditions for transport and packaging of dangerous goods
GB/T 14264 Semiconductor Material Terminology
GB 15258 Regulations on Preparing Chemical Safety Labels
GB/T 16483 Chemical Safety Data Sheet Contents and Project Sequence
GB/T 24581 Determination of Group III and V impurity content in silicon single crystals by low-temperature Fourier transform infrared spectroscopy
GB/T 26571 Specification for storage period of special gases
GB/T 28654 Industrial trichlorosilane
GB/T 29056 Methods for chemical analysis of trichlorosilane for silicon epitaxy Quantities of boron, aluminum, phosphorus, vanadium, chromium, manganese, iron, cobalt, nickel, copper, molybdenum, arsenic and antimony
Determination of inductively coupled plasma mass spectrometry
GB/T 29057 Procedure for evaluating polycrystalline silicon rods using zone melting crystal pulling method and spectral analysis method
GB 30000.19 Specification for Classification and Labeling of Chemicals Part 19.Skin Corrosion/Irritation
YS/T 987 Determination of carbon content in chlorosilane gas chromatography mass spectrometry
YS/T 1059 Gas chromatography method for determination of total carbon in trichlorosilane for silicon epitaxy
YS/T 1060 Determination of other chlorosilanes in trichlorosilane for silicon epitaxy by gas chromatography
3 Terms and definitions
The terms and definitions defined in GB/T 14264 apply to this document.
4 Technical requirements
4.1 Technical indicators
The technical indicators of the product should comply with the provisions of Table 1.
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