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GB/T 30656-2023: Polished monocrystalline silicon carbide wafers
Status: Valid GB/T 30656: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 30656-2023 | English | 359 |
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Polished monocrystalline silicon carbide wafers
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GB/T 30656-2023
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| GB/T 30656-2014 | English | 599 |
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Polished monocrystalline silicon carbide wafers
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GB/T 30656-2014
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PDF similar to GB/T 30656-2023
Basic data | Standard ID | GB/T 30656-2023 (GB/T30656-2023) | | Description (Translated English) | Polished monocrystalline silicon carbide wafers | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H83 | | Classification of International Standard | 29.045 | | Word Count Estimation | 18,196 | | Date of Issue | 2023-03-17 | | Date of Implementation | 2023-10-01 | | Older Standard (superseded by this standard) | GB/T 30656-2014 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 30656-2023: Polished monocrystalline silicon carbide wafers---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS29:045
CCSH83
National Standards of People's Republic of China
Replacing GB/T 30656-2014
Silicon carbide single crystal polished wafer
Released on 2023-03-17
2023-10-01 implementation
State Administration for Market Regulation
Released by the National Standardization Management Committee
foreword
This document is in accordance with the provisions of GB/T 1:1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules for Standardization Documents"
drafting:
This document replaces GB/T 30656-2014 "Silicon Carbide Single Crystal Polished Sheet": Compared with GB/T 30656-2014, except for structural adjustment and
Apart from editorial changes, the main technical changes are as follows:
a) The scope of application has been changed (see Chapter 1, Chapter 1 of the:2014 edition);
b) Changed the terms and definitions (see Chapter 3, Chapter 3 of the:2014 edition);
c) Added classification by diameter 150:0mm (see 4:2:3);
d) The technical requirements for silicon carbide single crystal polished wafers with a diameter of 150:0mm have been added (see Chapter 5);
e) The thickness and allowable deviation of semi-insulating silicon carbide single crystal polished wafers with a diameter of 100:0mm have been added (see 5:2);
f) Changed the requirements for total thickness variation (see 5:2, 4:5 of the:2014 edition);
g) The requirement for local thickness variation is added (see 5:2);
h) The warpage and curvature requirements for silicon carbide single crystal polished wafers with a diameter of 100:0 mm have been changed (see 5:2, 4:5 of the:2014 edition);
i) The requirements for resistivity have been changed (see 5:5, 4:10 of the:2014 edition);
j) Changed the requirements for microtubule density (see 5:6, 4:8 of the:2014 edition);
k) Added the requirements for the dislocation density of industrial-grade conductive silicon carbide single crystal polished wafers (see 5:7);
l) The requirements for cracks, hexagonal voids, and pits visible to the naked eye in the surface quality have been changed (see 5:10, 4:7 of the:2014 edition);
m) The requirements for chipping are added (see 5:10);
n) Added the content of usable area ratio and detection surface in surface quality (see the footnote of Table 9 in 5:10);
o) Changed the requirements for surface roughness (see 5:11, 4:5 of the:2014 edition);
p) The test method has been changed (see Chapter 6, Chapter 5 of the:2014 edition);
q) The requirements for batching and sampling have been changed (see 7:2, 7:3, 6:2, 6:3 of the:2014 edition);
r) Added inspection items (see 7:3);
s) Changed the determination of inspection results (see 7:4, 6:4 of the:2014 edition);
t) The content of the logo has been changed (see 8:1, 7:1 of the:2014 edition);
u) Changed the contents of accompanying documents (see 8:5, 7:4 of the:2014 edition);
v) Changed the content of diameter, crystal orientation angle and thickness in the method of designation (see Appendix A, Appendix A of the:2014 edition);
w) The detection method of the rocking curve is deleted (see Appendix B of the:2014 edition);
x) Added the test steps of Raman scattering method (see B:4:2):
Please note that some contents of this document may refer to patents: The issuing agency of this document assumes no responsibility for identifying patents:
This document is prepared by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standard
It is jointly proposed and managed by Materials Subcommittee (SAC/TC203/SC2) of Chemical Technology Committee:
This document was drafted by: Beijing Tianke Heda Semiconductor Co:, Ltd:, Institute of Physics, Chinese Academy of Sciences, Nanjing Guosheng Electronics Co:, Ltd:
Company, Anhui Changfei Advanced Semiconductor Co:, Ltd:, Nonferrous Metal Technology and Economic Research Institute Co:, Ltd:
The main drafters of this document: Chen Xiaolong, Peng Tonghua, She Zongjing, Wang Bo, Liu Chunjun, Li Suqing, Guo Yu, Lou Yanfang, Zheng Hongjun, Yang Jian,
Luo Hong and Niu Yingxi:
This document was first published in:2014, and this is the first revision:
Silicon carbide single crystal polished wafer
1 Scope
This document specifies the grades and classifications, technical requirements, test methods, inspection rules, marks,
Packaging, transportation, storage, accompanying documents and order form contents:
This document is applicable to the silicon carbide single crystal
light sheet:
2 Normative references
The contents of the following documents constitute the essential provisions of this document through normative references in the text: Among them, dated references
For documents, only the version corresponding to the date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to
this document:
GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystals
GB/T 2828:1-2012 Counting sampling inspection procedure Part 1: Batch-by-batch inspection sampling retrieved by acceptance quality limit (AQL)
plan
GB/T 6616 Non-contact eddy current method for testing the resistivity of semiconductor silicon wafers and the sheet resistance of silicon thin films
GB/T 6624 Visual inspection method for surface quality of silicon polished wafers
GB/T 13387 Silicon and other electronic material wafer reference plane length measurement method
GB/T 13388 X-ray test method for crystallographic orientation of silicon wafer reference plane
GB/T 14264 Terminology of semiconductor materials
GB/T 25915:1-2021 Clean rooms and related controlled environments Part 1: Classification of air cleanliness by particle concentration
GB/T 26067 Test method for notch size of silicon wafer
GB/T 29505 Surface Roughness Measurement Method for Silicon Wafer Flat Surface
GB/T 30866 Test method for silicon carbide single wafer diameter
GB/T 30867 Test method for silicon carbide single wafer thickness and total thickness change
GB/T 31351 Non-destructive testing method for micropipe density on silicon carbide single crystal polished wafers
GB/T 32188 Gallium Nitride Single Crystal Substrate X-ray Dual Crystal Rocking Curve FWHM Test Method
GB/T 32278 Test method for flatness of silicon carbide single wafer
GB/T 42271 Non-contact test method for resistivity of semi-insulating silicon carbide single crystal
GB/T 41765 Test method for dislocation density of silicon carbide single crystal
3 Terms and Definitions
GB/T 14264, GB/T 32278 and the following terms and definitions apply to this document:
3:1
4H silicon carbide 4Hsiliconcarbide
4H-SiC
The Si-C biatomic layer composed of Si atoms and C atoms has three different stacking modes: A, B, and C:
The < 0001 > direction is periodically stacked in the "ABCBABCB" sequence, thus forming a silicon carbide crystal:
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