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GB/T 21548-2021 English PDF

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GB/T 21548-2021: Methods of measurement of the high speed semiconductor lasers directly modulated for optical fiber communication systems
Status: Valid

GB/T 21548: Evolution and historical versions

Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusPDF
GB/T 21548-2021English259 Add to Cart 3 days [Need to translate] Methods of measurement of the high speed semiconductor lasers directly modulated for optical fiber communication systems Valid GB/T 21548-2021
GB/T 21548-2008EnglishRFQ ASK 5 days [Need to translate] Methods of measurement of the high speed semiconductor lasers directly modulated for optical fiber communication systems Obsolete GB/T 21548-2008

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Basic data

Standard ID GB/T 21548-2021 (GB/T21548-2021)
Description (Translated English) Methods of measurement of the high speed semiconductor lasers directly modulated for optical fiber communication systems
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard M31
Word Count Estimation 14,167
Issuing agency(ies) State Administration for Market Regulation, China National Standardization Administration

GB/T 21548-2021: Methods of measurement of the high speed semiconductor lasers directly modulated for optical fiber communication systems


---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Methods of measurement of the high speed semiconductor lasers directly modulated for optical fiber communication systems ICS 31.260 M31 National Standards of People's Republic of China Replace GB/T 21548-2008 High-speed direct modulation semiconductor laser for optical communication Measurement methods Released on 2021-04-30 2021-08-01 implementation State Administration of Market Supervision and Administration Issued by the National Standardization Management Committee

Table of contents

Foreword Ⅰ 1 Scope 1 2 Normative references 1 3 Terms and definitions 1 4 Abbreviations 4 5 Measuring method 5 Appendix A (informative appendix) Semiconductor laser component structure 11

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard replaces GB/T 21548-2008 "Measurement method of high-speed direct modulation semiconductor lasers for optical communications". Compared with GB/T 21548-2008, the main technical changes are as follows. ---Modified the scope description (see Chapter 1, Chapter 1 of the.2008 edition); --- Deleted GB/T 17626 series standards, YD/T 701-1993, YD/T 1111.2-2001, YD/T 767-1995 and IEC 62007-2 cited GB/T 15651-1995 and GB/T 31359-2015 (see Chapter 2,.2008 Chapter 2 of the Year Edition); --- Deleted peak wavelength and center wavelength, threshold current, optical power-drive current linearity, distribution feedback, spectral width, multiple quantum The definitions of well distributed feedback, side mode suppression ratio, carrier-to-noise ratio, combined second-order intermodulation, combined third-order beat, and modified semiconductor lasers The definition of its components (see Chapter 3, 3.2 of the.2008 edition); --- Deleted many abbreviations such as analog bandwidth, and added PAM4 abbreviations (see Chapter 4,.2008 edition 3.1); --- Deleted the laser characteristics and classification (see 5.2 in the.2008 edition); ---Added the description of the measurement scheme for wavelength division multiplexing semiconductor laser components (see 5.1); ---Modified the requirements for environmental conditions and measuring instruments (see 5.2 and 5.3, 5.3.1 of the.2008 edition); ---Deleted requirements for measuring equipment and instruments (see 5.3.1.2, 5.3.2.1, 5.3.3.1, 5.3.4.1, 5.3.5.1, 5.3.6.1, 5.3.7.1, 5.3.8.1, 5.3.9.1, 5.3.10.1, 5.3.11.1, 5.3.12.1); ---Modified the threshold current measurement method (see 5.4.2, 5.3.3 of the.2008 edition); ---The measurement method of slope efficiency has been added (see 5.4.2); ---Added the description of the eye diagram measurement method of four-level pulse amplitude modulation (see 5.4.6); ---Modified the measurement of S11 parameters (see 5.4.7, 5.3.8 of the.2008 edition); ---Modified the measurement of the wavelength-temperature drift coefficient (see 5.4.10, 5.3.11 of the.2008 edition); ---Modified the measurement method of relative intensity noise (see 5.4.11, 5.3.12 of the.2008 edition); ---The measurement methods of carrier-to-noise ratio, combined second-order intermodulation and combined third-order beat, reliability test and classification and product inspection methods have been deleted (See Appendix A, Appendix B, Appendix C and Appendix D of the.2008 edition); ---Added the single-channel semiconductor laser component packaging structure and the wavelength division multiplexing laser component packaging structure diagram (see appendix A). Please note that some of the contents of this document may involve patents. The issuing agency of this document is not responsible for identifying these patents. This standard was proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This standard is under the jurisdiction of the National Communication Standardization Technical Committee (SAC/TC485). Drafting organizations of this standard. Fiberhome Technology Group Co., Ltd., ZTE Corporation, China Academy of Information and Communications Technology, Shenzhen Xinfei Tongguang Electronic Technology Co., Ltd. The main drafters of this standard. Jiang Yi, Li Shiyu, Ma Weidong, Luo Biao, Wu Chengbin, Zhao Wenyu, Chen Yue, Gong Xue, Cao Li, He Wanhui. The previous versions of the standard replaced by this standard are as follows. ---GB/T 21548-2008. High-speed direct modulation semiconductor laser for optical communication Measurement methods

1 Scope

This standard specifies the classification and measurement methods of high-speed direct modulation lasers and their components for optical communications. This standard applies to high-speed direct modulation lasers and their components used in optical communication systems such as optical transmission networks, optical access networks, and data centers. The photoelectric characteristics measurement of the analog optical communication system and other optical systems used in the laser and its components can also be used as a reference.

2 Normative references

The following documents are indispensable for the application of this document. For dated reference documents, only the dated version applies to this article Pieces. For undated reference documents, the latest version (including all amendments) is applicable to this document. GB/T 15651-1995 Semiconductor Devices Discrete Devices and Integrated Circuits Part 5.Optoelectronic Devices GB/T 31359-2015 Semiconductor laser test method

3 Terms and definitions

The following terms and definitions defined in GB/T 15651-1995 apply to this document. 3.1 Semiconductor laser A laser made of III-V group compound semiconductor heterostructure materials. Note. III-V group compound semiconductor heterostructure materials (such as GaAlAs/GaAs, InGaAsP/InP, InAlGaAs/InP). 3.2 Semiconductor laser subassembly A hybrid composed of semiconductor laser chips, peripheral connection elements, backlight detectors, microlenses, optical isolators, coupled fibers, tube cases, etc. Integrated pieces. 3.3 Direct modulation of optical power density directly The modulated electrical signal directly controls the laser drive current, so that the laser output light intensity changes with the amplitude of the modulated electrical signal. 3.4 Slope efficiency Differential efficiency The ratio of the laser output optical power difference to its corresponding driving current difference. Note 1.Expressed in S, the unit is milliwatt per milliampere (mW/mA), and the definition is shown in formula (1). S=ΔP/ΔI= (P01-P02)/(I01-I02) (1) Where. P01---The output optical power value of the linear region, usually 90% of the rated optical power, in milliwatts (mW); P02---The output optical power value of the linear region, usually 10% of the rated optical power, in milliwatts (mW);

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