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GB/T 10067.410-2014: Basic specifications for electroheat installations -- Part 410: Single crystal growing furnace
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 10067.410-2014 | English | 329 |
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Basic specifications for electroheat installations -- Part 410: Single crystal growing furnace
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GB/T 10067.410-2014
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Basic data | Standard ID | GB/T 10067.410-2014 (GB/T10067.410-2014) | | Description (Translated English) | Basic specifications for electroheat installations -- Part 410: Single crystal growing furnace | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | K61 | | Classification of International Standard | 25.180.10 | | Word Count Estimation | 14,119 | | Date of Issue | 12/5/2014 | | Date of Implementation | 4/16/2015 | | Quoted Standard | GB 150-2011; GB/T 2900.23-2008; GB 3095-2012; GB 8702-1998; GB 8978-1996; GB/T 10066.1-2004; GB/T 10066.4-2004; GB/T 10067.1-2005; GB/T 10067.4-2005; GB 12348-2008; GB 16297-1996; JB/T 9691-1999 | | Regulation (derived from) | Announcement of Newly Approved National Standards 2014 No. 27 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This Standard provides for the term TDR crystal furnace, product classifications, technical requirements, test methods, inspection rules and signs, packaging, transportation and storage. This section applies to direct La Fala system semiconductor silicon | GB/T 10067.410-2014: Basic specifications for electroheat installations -- Part 410: Single crystal growing furnace
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Basic specifications for electroheat installations Part 410.. Single crystal growing furnace
ICS 25.180.10
K61
National Standards of People's Republic of China
Electric equipment basic technical conditions
Part 410. Puller
Part 410. Singlecrystalgrowingfurnace
Issued on. 2014-12-05
2015-04-16 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
GB/T 10067 "Basic electric device technical conditions" existing 19 sections.
--- Part 1. Common part;
--- Part 2. Arc heating device;
--- Part 3. induction electric device;
--- Part 31. IF coreless induction furnace;
--- Part 32. voltage-frequency multi-station frequency coreless induction furnace complete sets of equipment;
--- Part 33. frequency coreless induction melting Tonglu;
--- Part 4. Indirect resistance furnaces;
--- Part 41. network with resistance heating unit;
--- Part 42. Push resistance heating unit;
--- Part 43. Forced convection Pit resistance furnace;
--- Part 44. Box-type resistance furnace;
--- Part 45. vacuum hardening furnace;
--- Part 46. Bell-type resistance furnace;
--- 47 parts. vacuum heat treatment and brazing furnace;
--- Part 48. Car-resistance furnace;
--- Part 49. Natural convection Pit resistance furnace;
--- Part 410. single crystal furnace;
--- Part 411. Electric bath furnace;
--- Part 5. High-frequency dielectric heating equipment.
We will continue to develop other parts as needed.
This section GB/T Part 41,010,067 should the GB/T Part 1 and Part 410 067 used in conjunction.
This section drafted in accordance with GB/T 1.1-2009 given rules.
This part is proposed by the China Electrical Equipment Industrial Association.
This part of the National Electric Equipment Industry Standardization Technical Committee (SAC/TC121) centralized.
This section is drafted. Xi'an Institute Furnace Co., Ltd. Jiangsu Huasheng Tianlong photoelectric device, Xi'an Polytechnic Jingke
Co., Ltd., China Metallurgical Furnace Engineering Technology Center, the State Quality Supervision and Inspection Center furnace, furnace Shaanxi Province Engineering Research Center.
The main drafters of this section. Chen Ju-cai, LI Liu Chen, Yuan Fanglan, bunch day, Zhu Lin.
Electric equipment basic technical conditions
Part 410. Puller
1 Scope
This section GB/T 10067 specifies the terminology TDR crystal furnace, product classification, technical requirements, test methods, inspection rules
And signs, packaging, transportation and storage.
This section applies to straight La Fala made of semiconductor silicon and germanium single crystal single crystal furnace.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB 150-2011 Steel Pressure Vessels
GB/T 2900.23-2008 Electrotechnical terminology industrial electric equipment
GB 3095-2012 Ambient Air Quality Standard
GB 8702-1998 electromagnetic radiation protection
GB 8978-1996 Integrated Wastewater Discharge Standard
GB/T 10066.1-2004 Test methods for electroheat installations - Part 1. General section
GB/T 10066.4-2004 Test methods for electric equipment - Part 4. Indirect resistance furnaces
GB/T 10067.1-2005 basic technical conditions for electric devices - Part 1. General section
GB/T 10067.4-2005 Electric equipment basic technical conditions - Part 4. Indirect resistance furnaces
GB 12348-2008 industrial enterprises of environmental noise emission standard plant boundary
GB 16297-1996 Integrated Emission Standard of Air Pollutants
JB/T 9691-1999 Heating Equipment Model methodology
3 Terms and Definitions
GB/T 2900.23-2008, GB/T 10066.4-2004 and as defined in the following terms and definitions apply to this document.
3.1
Puller crystalgrowingfurnace
An industrial electric use Czochralski (czochralskimethod) or zone melting method (floatingzone) pulling a single crystal semiconductor material
equipment.
3.2
Melting quantity charge
Each time one of the largest furnace charging amount prescribed single crystal furnace design, not including the amount added during crystal pulling.
3.3
Czochralski czochralskimethod
The most common method of growing the single crystal, i.e., the high-purity polycrystalline material placed in a crucible and heated to melt, pulling the seed is fixed in the shaft
Crystal fused with the molten material, and then at a certain speed vertical pulling up the crystal will continue to grow in the lower end of the seed. Also known as the law cited,
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