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JJG 48-2004 English PDF

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JJG 48-2004: Verification Regulation of Standard Slice of Single Crystal Silicon Resistivity
Status: Obsolete

JJG 48: Evolution and historical versions

Standard ID	Contents [version]	USD	STEP2	[PDF] delivered in	Standard Title (Description)	Status	PDF
JJG 48-2004	English	839	Add to Cart	4 days [Need to translate]	Verification Regulation of Standard Slice of Single Crystal Silicon Resistivity	Obsolete	JJG 48-2004
JJG 48-1990	English	839	Add to Cart	6 days [Need to translate]	Verification Regulation of Standard Slice of Single Crystal Silicon Resistivity	Obsolete	JJG 48-1990

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Basic data

Standard ID	JJG 48-2004 (JJG48-2004)
Description (Translated English)	Verification Regulation of Standard Slice of Single Crystal Silicon Resistivity
Sector / Industry	Metrology & Measurement Industry Standard
Classification of Chinese Standard	A56
Classification of International Standard	17.220
Word Count Estimation	21,295
Date of Issue	2004-09-21
Date of Implementation	2005-03-21
Older Standard (superseded by this standard)	JJG 48-1990
Quoted Standard	2004 technical regulations issued by national metrology (industrial measurement 2005 Volume 15, Issue 1)
Regulation (derived from)	2004 technical regulations issued by national metrology (industrial measurement 2005 Volume 15, Issue 1)
Issuing agency(ies)	State Administration of Quality Supervision, Inspection and Quarantine
Summary	This standard applies to the standard sample resistivity silicon initial verification, testing and use of follow-up inspection.

JJG 48-2004: Verification Regulation of Standard Slice of Single Crystal Silicon Resistivity

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Verification Regulation of Standard Slice of Single Crystal Silicon Resistivity National Metrology Verification Regulations of the People's Republic Silicon single crystal resistivity standard sample Released on.2004-09-21 2005-03-21 implementation The General Administration of Quality Supervision, Inspection and Quarantine issued Silicon single crystal resistivity standard sample Verification procedure Replace JJG 48-1990 This regulation was approved by the General Administration of Quality Supervision, Inspection and Quarantine on September 21,.2004 and Implemented on March 21,.2005. Focal Point. National Radio Measurement Technology Committee Main drafting unit. China Institute of Metrology Participated in the drafting unit. Guangzhou Institute of Semiconductor Materials This procedure entrusts the National Radiometric Technical Committee to explain The main drafters of this procedure. Lu Xiaoming (China Institute of Metrology) Participate in the drafters. Xie Hongbo (Guangzhou Institute of Semiconductor Materials)

1 Scope (1) 2 Overview (1) 3 Metrological performance requirements (1) 3.1 Measurement range of resistivity of standard samples (1) 3.2 Standard sample nominal value (1) 3.3 Standard sample parameters and performance requirements (1) 4 General technical requirements (2) 5 measuring instrument control (3) 5.1 Verification conditions (3) 5.2 Verification items and verification methods (5) 5.3 Processing of verification results (7) 5.4 Verification cycle (8) Appendix A Silicon Single Crystal Resistivity Standard Sample Temperature Correction Factor Table (9) Appendix B Cleaning Methods for Silicon Single Crystal Resistivity Standard Samples (10) Appendix C Original record of silicon single crystal resistivity standard sample verification (11) Appendix D Silicon Single Crystal Resistivity Standard Sample Verification Certificate and Verification Result Notice Page Format (12) Appendix E Calculation and Processing of Calibration Results of Silicon Single Crystal Resistivity Standard Samples (13) Appendix F Table of Various Correction Coefficients for Calculating Standard Samples of Silicon Single Crystal Resistivity (15) Appendix G Correction Factor Table (Feg) at 6mm from the edge of the standard sample of silicon single crystals of different diameters (16) Silicon single crystal resistivity standard sample verification procedure

1 Scope

This procedure is applicable to the first verification, subsequent verification and inspection in the use of silicon single crystal resistivity standard samples.

2 Overview

The silicon single crystal resistivity standard sample (hereinafter referred to as the standard sample) is made of high-purity polycrystalline silicon, which is prepared by single crystal. It is manufactured by various processes such as neutron enthalpy doping and has a physical standard of certain geometric dimensions. Known by uncertainty Standard device, the physical resistance of the physical standard and other indicators are calibrated, the standard sample is used as the standard, the phase The parameter is passed for magnitude measurement.

3 Metrological performance requirements

3.1 Measurement range of resistivity of standard samples The measurement range of the resistivity is 0.005 Ω·cm to 5000 Ω·cm. 3.2 Standard sample nominal value The nominal value of the standard sample should meet one of the following 19 specifications, see Table 1. Table 1 The nominal value of the standard sample Ω·cm Resistivity nominal value 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 25 75 180 250 500 1000.2000 5000 3.3 Standard sample parameters and performance requirements 3.3.1 Standard samples, in addition to the nominal and actual values of resistivity, shall also have the following parameters or data. Conductive Type, doping element, diameter value, thickness value and usage requirements. 3.3.2 For the standard samples of different levels, the requirements of each indicator are shown in Table 2. Table 2 Indicators of standard samples Sample level qualification index project National standard sample first-class standard sample secondary standard sample Diameter (40~75)±1%mm (40~75)±1%mm (25~100)±2%mm Thickness W≤1.0mm W≤1.0mm W≤1.0mm Nominal value deviation 0.01Ω·cm~500Ω·cm ±5% ±10% ±15% Center point resistivity repeatability (2σ) 0.3% 0.4% 0.8% Radial resistivity unevenness ≤3% ≤4% ≤8%

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