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GB/T 42106-2022: Nanotechnology - Fabrication of three dimensional nanostructures and devices - A strain method induced by ion beam irradiation
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 42106-2022 | English | 199 |
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Nanotechnology - Fabrication of three dimensional nanostructures and devices - A strain method induced by ion beam irradiation
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GB/T 42106-2022
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Basic data | Standard ID | GB/T 42106-2022 (GB/T42106-2022) | | Description (Translated English) | Nanotechnology - Fabrication of three dimensional nanostructures and devices - A strain method induced by ion beam irradiation | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | A42 | | Classification of International Standard | 07.030 | | Word Count Estimation | 10,160 | | Date of Issue | 2022-12-30 | | Date of Implementation | 2023-07-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 42106-2022: Nanotechnology - Fabrication of three dimensional nanostructures and devices - A strain method induced by ion beam irradiation
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ICS 07.030
CCSA42
National Standards of People's Republic of China
Nanotechnology 3D Nanostructures and Fabrication of Devices
Ion beam irradiation induced strain method
Posted on 2022-12-30
2023-07-01 implementation
State Administration for Market Regulation
Released by the National Standardization Management Committee
table of contents
Preface I
Introduction II
1 Scope 1
2 Normative references 1
3 Terms, Definitions and Abbreviations 1
3.1 Terms and Definitions 1
3.2 Abbreviations 1
4 Processing Principle 2
4.1 Principle 2
4.2 Three-dimensional nanostructures that can be constructed using this processing principle 2
5 Materials and Equipment 3
5.1 Materials 3
5.2 Device 3
6 Environmental conditions 3
6.1 Temperature 3
6.2 Humidity 3
6.3 Cleanliness 4
7 processing method 4
7.1 Substrate cleaning 4
7.2 Processing method of erecting nanowires to construct three-dimensional nanostructures 4
7.3 Processing methods for building three-dimensional nanostructures with planar nanofilms 5
7.4 Save 5
Reference 6
foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules for Standardization Documents"
drafting.
This document was proposed by the Chinese Academy of Sciences.
This document is under the jurisdiction of the National Nanotechnology Standardization Technical Committee (SAC/TC279).
This document was drafted by. Institute of Physics, Chinese Academy of Sciences, National Nanoscience Center, Shenzhen Institute of Standards and Technology.
The main drafters of this document. Gu Changzhi, Yang Haifang, Li Junjie, Liu Qian, Wang Yiqun, Fan Yangbo.
Introduction
Ion beam irradiation can induce strain in the upright nanowires or planar nanofilms, so that the nanowires or nanofilms can be produced in three-dimensional space.
It can be bent or folded, which provides a new processing method for the construction of high-performance three-dimensional nanoelectronic devices, optoelectronics and optical components. this document
A processing method specification for constructing three-dimensional nanostructures and devices using ion beam irradiation-induced strain technology is provided.
The issuing authority of this document draws attention to the fact that 7.2 and 7.3 may relate to vertical nanowire or planar nanothin when declaring compliance with this document.
Use of patents related to processing methods for building three-dimensional nanostructures from membranes.
The issuing authority of this document has no position on the veracity, validity and scope of the patent.
The patent holder has committed to the issuing authority of this document that he is willing to cooperate with any applicant on reasonable and non-discriminatory terms and conditions
Next, negotiate the licensing of patents. The patent holder's statement is on file with the issuing authority of this document. Relevant information can be obtained through the
Get it in the following way.
Name of patent holder. Institute of Physics, Chinese Academy of Sciences
Address. No. 8, South Third Street, Zhongguancun, Haidian District, Beijing
Please note that in addition to the above patents, some content of this document may still involve patents. The issuer of this document is not responsible for identifying patents
responsibility.
Nanotechnology 3D Nanostructures and Fabrication of Devices
Ion beam irradiation induced strain method
1 Scope
This document describes the processing method of ion beam irradiation-induced strain technology to construct three-dimensional nanostructures and devices, mainly including processing principles,
Materials and equipment, environmental conditions, processing methods.
This document is applicable to ion beam irradiation to induce spatial strain of vertical nanowires and planar nanofilms, and then realize the three-dimensional space by a
Three-dimensional nanostructures and devices composed of two-dimensional nanowires and two-dimensional nanofilms.
2 Normative references
The contents of the following documents constitute the essential provisions of this document through normative references in the text. Among them, dated references
For documents, only the version corresponding to the date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to
this document.
GB/T 6682 Analytical laboratory water specifications and test methods
3 Terms, Definitions and Abbreviations
3.1 Terms and Definitions
The following terms and definitions apply to this document.
3.1.1
In any dimension of three-dimensional space, one or more parts are interconnected components in the nanoscale region.
3.1.2
Under ion beam irradiation, the one-dimensional and two-dimensional nanostructures were strained and then deformed.
3.1.3
focused ion beam focused ion beam
Focus the ion beam to the sub-micron or nanometer scale, and control the ion beam scanning motion through the deflection system and acceleration system, which can realize micro-nano
Pattern detection analysis and maskless processing of micro-nano structures.
3.2 Abbreviations
The following abbreviations apply to this document.
FIB. focused ion beam (focusedionbeam)
FIB/FEB. Focused ion beam/focused electron beam (focusedionbeam/focusedelectronbeam)
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