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GB/T 43682-2024: Nanotechnology - Measurement methods for carrier mobility and sheet resistance of graphene films of sub-nanometer thickness
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 43682-2024 | English | 379 |
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Nanotechnology - Measurement methods for carrier mobility and sheet resistance of graphene films of sub-nanometer thickness
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GB/T 43682-2024
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Basic data | Standard ID | GB/T 43682-2024 (GB/T43682-2024) | | Description (Translated English) | Nanotechnology - Measurement methods for carrier mobility and sheet resistance of graphene films of sub-nanometer thickness | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | A42 | | Classification of International Standard | 71.040.50 | | Word Count Estimation | 18,142 | | Date of Issue | 2024-03-15 | | Date of Implementation | 2024-07-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 43682-2024: Nanotechnology - Measurement methods for carrier mobility and sheet resistance of graphene films of sub-nanometer thickness
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 71.040.50
CCSA42
National Standards of People's Republic of China
Nanotechnology Sub-nanometer thickness graphene film carrier
Mobility and Sheet Resistance Measurement Methods
Released on 2024-03-15
2024-07-01 Implementation
State Administration for Market Regulation
The National Standardization Administration issued
Table of Contents
Preface III
Introduction IV
1 Scope 1
2 Normative references 1
3 Terms and Definitions 1
4 Principle 2
5 Equipment 3
6 Device preparation and measurement process 4
7 Calculation method 7
8 Analysis and calculation of uncertainty 9
9 Measurement Report 10
Appendix A (Informative) Graphene samples grown by chemical vapor deposition (CVD)
Mobility and sheet resistance are key control characteristics for graphene film quality control and product development. From touch screens to solar cells, sheet resistance is a key control characteristic for graphene films.
The resistance varies by two to three orders of magnitude. However, even when made of the same thin film, the carrier mobility extracted from devices with different structures varies.
The formulation of this document is conducive to standardizing the shape, electrode type, electrode contact method, and measurement of Hall devices of graphene films.
The scientific nature of the graphene film quality evaluation system can be improved, and the influence of different experimental conditions on the measurement of carrier mobility and sheet resistance can be reduced.
At the same time, the measurement method specified in this document is simple to operate, low-cost and has good economic benefits.
Nanotechnology Sub-nanometer thickness graphene film carrier
Mobility and Sheet Resistance Measurement Methods
1 Scope
This paper describes the principle of sample preparation and carrier mobility and sheet resistance measurements of Hall devices in sub-nanometer thick graphene films.
The instrument includes the principles, equipment, device preparation and measurement process, calculation methods, analysis and calculation of uncertainty, and measurement reports.
This document applies to the carrier mobility of sub-nanometer thick graphene films with length and width greater than 100 μm.
(< 104cm2/Vs) and sheet resistance measurements.
2 Normative references
This document has no normative references.
3 Terms and definitions
The following terms and definitions apply to this document.
3.1
Graphene film of sub-nanometer thickness
Graphene film with a thickness of less than 1nm.
3.2
Hall Effect
If a magnetic field is applied to a sample with current flowing through it, a transverse potential difference is generated in the direction perpendicular to the current and magnetic field due to the influence of the Lorentz force.
Phenomenon.
[Source. GB/T 14264-2009, 3.111, modified]
3.3
Resistivity
The ratio of the potential gradient parallel to the current flow in a material to the current density.
Note. Resistivity is a directly measurable material parameter.
[Source. GB/T 4326-2006, 2.1, modified]
3.4
Hall electric field
When a sub-nanometer graphene film (3.1) sample is simultaneously subjected to a mutually perpendicular electric field and a magnetic field, the carriers in the sample will be
The sample is deflected in three mutually perpendicular directions, establishing a transverse electric field on both sides of the sample.
[Source. GB/T 4326-2006, 2.2, modified]
3.5
Hall coefficient halcoefficient
The ratio of the Hall electric field (3.4) to the product of current density and magnetic flux density.
[Source. GB/T 4326-2006, 2.2, modified]
3.6
The ratio of the absolute value of the Hall coefficient (3.5) to the resistivity.
3.7
aspect ratio
The ratio of the width (w) to the length (l) of a Hall device.
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