Search result: GB/T 4023-2015 (GB/T 4023-1997 Older version)
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Semiconductor devices -- Discrete devices and integrated circuits -- Part 2: Rectifier diodes
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GB/T 4023-2015
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| GB/T 4023-1997 | English | RFQ |
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Semiconductor devices Discrete devices and integrated circuits Part 2: Rectifier diodes
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GB/T 4023-1997
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| GB 4023-1986 | English | RFQ |
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Semiconductor discrete devices--Part 2: Rectifier diodes
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GB 4023-1986
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| Standard ID | GB/T 4023-2015 (GB/T4023-2015) | | Description (Translated English) | Semiconductor devices -- Discrete devices and integrated circuits -- Part 2: Rectifier diodes | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | K46 | | Classification of International Standard | 31.080.10 | | Word Count Estimation | 59,517 | | Date of Issue | 2015-12-31 | | Date of Implementation | 2017-01-01 | | Older Standard (superseded by this standard) | GB/T 4023-1997 | | Quoted Standard | GB/T 2900.66-2004; GB/T 17573-1998 | | Adopted Standard | IEC 60747-2-2000, IDT | | Regulation (derived from) | State Standard Announcement 2015 No.43 | | Issuing agency(ies) | Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China; Standardization Administration of China | | Summary | This standard specifies the following categories or categories of devices standards: rectifier diodes include: avalanche rectifier diodes; controlled avalanche rectifier diodes; fast switching rectifier diodes. |
GB/T 4023-2015
Semiconductor devices - Discrete devices and integrated circuits - Part 2. Rectifier diodes
ICS 31.080.10
K46
National Standards of People's Republic of China
Replacing GB/T 4023-1997
(IEC 60747-2.2000, IDT)
Issued on. 2015-12-31
2017-01-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Table of Contents
Preface Ⅶ
Introduction Ⅸ
1 Scope 1
2 Normative references 1
3 Terms and definitions
3.1 General terms 1
3.2 Terms ratings and characteristics. voltage 2
3.3 Terms ratings and characteristics. the current 3
Term rating of 3.4 and features. 4 power dissipation
Term rating of 3.5 and features. 5 Other features
4 text symbols 7
4.1 Overview 7
General index added 4.2 7
4.2.1 current, voltage and power 8
4.2.2 Parameter 8
4.3 Table 8 text symbols
4.3.1 voltage (see FIG. 4, FIG. 5) 8
4.3.2 current (see Fig. 6) 9
4.3.3 Power 10
4.3.4 switch 10
5 Essential ratings and characteristics 10
5.1 Overview 10
5.1.1 Scope 10
Rated 10 5.1.2 Method
5.1.3 Recommended temperature 10
5.2 rated conditions 11
5.2.1 Environmental rated rectifier diodes 11
5.2.2 case - rated rectifier diodes 11
Voltage and current rating of 5.3 (limit) 11
5.3.1 Non repetitive peak reverse voltage (VRSM) 11
5.3.2 repetitive peak reverse voltage (VRRM) 11
5.3.3 Reverse Working peak voltage (VRWM) 11
5.3.4 Reverse DC voltage (VR) (if applicable) 11
5.3.5 average forward current (IF (AV)) 11
5.3.6 repetitive peak forward current (IFRM) (if applicable) (particularly suitable for fast switching diodes) 11
5.3.7 forward overload current (I (OV)) 12
5.3.8 forward surge current (IFSM) 12
5.3.9 DC forward current (IF) 12
5.3.10 shell is not broken peak current (IRSMC) 13
5.4 rated frequency (limit) 13
5.5 Dissipation Power Rating (limit) 13
5.5.1 Reverse Surge power dissipation (avalanche rectifier diodes and controlled avalanche rectifier diodes) 13
5.5.2 repetitive peak reverse power dissipation (controlled avalanche rectifier diodes) 13
5.5.3 reverse average power dissipation (controlled avalanche rectifier diodes) 13
5.6 Temperature Rating (limit) 13
5.6.1 The temperature of the cooling fluid temperature or reference point (for ambient - rated or case - rated rectifier diodes) 13
5.6.2 Storage Temperature (Tstg) 13
5.6.3 equivalent junction temperature (Tj) (if applicable) 13
13 5.7 electrical characteristics
5.7.1 Forward Characteristics (when applicable) 13
5.7.2 forward voltage (under thermal equilibrium conditions) 14
5.7.3 breakdown voltage (V (BR)) (, not for duplication of avalanche rectifier diodes) 14
5.7.4 reverse repetitive peak current (IRRM) 14
5.7.5 The total power dissipation (Ptot) 14
5.7.6 The maximum total energy of a half sine-wave forward current pulse (when applicable) (particularly suitable for fast switching diodes) 14
5.7.7 recovery charge (Qr) (when applicable), shown in Figure 915
5.7.8 peak reverse recovery current (iRM) (when applicable), shown in Figure 915
5.7.9 reverse recovery time (trr) (if applicable), shown in Figure 915
(If applicable) 5.7.10 forward recovery time of 15
(If applicable) 5.7.11 forward recovery voltage peak (VFRM) 15
5.7.12 (reverse recovery) soft [degrees] factor (FRRS) (if applicable) 16
(If applicable) 16 5.8 Thermal Characteristics
5.9 The mechanical properties and other data 16
5.10 application data 16
5.10.1 steady state operation (including overload) 16
5.10.2 transient conditions 17
Claim 6 Type tests and routine tests, the rectifier diode 17 mark
6.1 Type tests 17
6.2 Routine tests 17
6.3 Measurement and test methods 18
6.4 rectifier diode symbol 18
7 measuring and test methods 18
Methods of measurement of electrical characteristics 18 7.1
7.1.1 General Considerations 18
7.1.2 Forward voltage 18
7.1.3 Avalanche and controlled avalanche rectifier diode breakdown voltage (V (BR)) 20
7.1.4 Reverse Current 21
7.1.5 recovery charge and reverse recovery time (Qr, trr) 24
7.1.6 forward recovery time and forward recovery voltage peak (tfr, VFRM) 27
Methods of measurement 28 7.2 Thermal Characteristics
7.2.1 reference point temperature 28
7.2.2 Thermal resistance and transient thermal impedance 28
7.3 rating (limit) test method 30
7.3.1 forward surge current (IFSM) 30
7.3.2 Non repetitive peak reverse voltage (VRSM) 32
7.3.3 Avalanche and controlled avalanche rectifier diode reverse peak power (or did not repeat a) (PRRM, PRSM) 32
7.3.4 shell is not broken peak current 36
7.4 electrical endurance test 38
7.4.1 Durability Test Table 38
7.4.2 Durability test conditions 38
7.4.3 receiving test failure criteria and failure characteristic determination 38
7.4.4 Reliability Test determination failure characteristics and failure criterion 38
7.4.5 Test program error when 38
7.4.6 cycle load test 38
Appendix A (informative) temperature rise over time to calculate the load 40
1 forward recovery voltage waveforms during 5
2 reverse recovery current waveform during 6
Figure 3 Recovery Charge 7
4 reverse voltage rating 8
5 forward characteristic 9
6 forward current rating 9
7 repetitive peak forward current (IFRM) Example 12
And the relationship between the maximum forward current value of the total energy and pulse duration Figure 8 a half sine-wave current pulses
(Parametric. The Joule pulse energy units) 14
9 recovery charge Qr, peak reverse recovery current iRM, reverse recovery time trr (ideal characteristic curve) 15
10 forward voltage test circuit (DC method) 19
11 forward voltage test circuit (oscilloscope method) 19
12 forward voltage test circuit (pulse method) 19
13 average forward voltage of the test circuit 20
Figure 14 is a breakdown voltage test circuit 21
15 reverse current test circuit (DC method) 21
16 reverse current test circuit (oscilloscope method) 22
17 peak reverse current test circuit 22
18 peak reverse current test circuit (current heating method) 23
Figure 19 Qr and trr test circuit (half sine-wave method) 24
FIG. 20 through the diode D current waveform (half sine-wave method) 24
Figure 21 Qr and trr test circuit (rectangular wave method) 25
FIG. 22 through the diode D current waveform (rectangular wave method) 26
Figure 23 tfr and VFRM test circuit 27
24 Figure tfr and measuring the current and voltage waveforms VFRM 27
25 thermal resistance test circuit 29
26 transient thermal impedance of the test circuit 30
27 surge current test circuit 31
Figure 28 does not reverse repetitive peak voltage test circuit 32
29 Avalanche and controlled avalanche rectifier diode peak reverse power test circuit (reverse current triangular wave method) 33
Figure 30 Reverse current waveform (triangular wave method) 33
31 reverse avalanche peak power and controlled avalanche rectifier diode test circuit (reverse current sine wave method) 34
32 Reverse current waveforms (sine-wave method) 34
Figure 33 Avalanche and controlled avalanche rectifier diode peak reverse power test circuit (reverse current rectangular wave method) 35
Figure 34 Reverse current waveform (rectangular wave method) 35
Diagram 35 reverse breakdown voltage and power PRSM 36
Figure 36 shell does not break the peak current of the test circuit 37
37 by the reverse current iR device test waveform 37
Circuit and the waveform 38 of 38 thermal cycling load test
Figure A.1 non-rectangular pulses stepped approximate 40
Generating the power P dissipated Figure A.2 semiconductor device, a rectangular pulse duration of 40 t1
Diagram A.3 transient thermal impedance Zth (t) with a time of 41
Figure A.4 three single rectangular pulse sequence 41
Figure A.5 same period of the pulse sequence 42
Figure A.6 each cycle of the pulse sequences of two different 43
Table 1 Minimum pilot project rectifier diode type tests and routine tests 17
Table 2 after the durability test, when the reception determining failure characteristic 39
Table 3 39 durability test conditions
The formula equivalent junction temperature rise Table A.1 several typical load 45
Foreword
"Semiconductor devices Discrete devices" national standards are expected structure as follows.
--- Part 1. General;
--- Part 2. rectifier diode;
--- Part 3. Signal (including switching) and regulator diodes;
--- Part 4. Microwave Devices;
--- Part 4-1. Microwave diodes and transistors - Microwave field effect transistor detailed specification;
--- Part 5-1. Optoelectronic devices - General;
--- Part 5-2. Optoelectronic devices - Essential ratings and characteristics;
--- Part 5-3. Optoelectronic devices - Test method;
--- Part 5-4. Optoelectronic devices of the semiconductor laser;
--- Part 5-5. Optoelectronic devices Optocoupler;
--- Part 6. Thyristors;
--- Part 7. Bipolar transistors;
--- Part 8. field effect transistor;
--- Part 9. insulated gate bipolar transistor;
--- Part 10. Generic specification for discrete devices and integrated circuits;
--- Part 11. Sectional specification for discrete devices;
--- Part 14-1. Semiconductor sensors - General and classification;
--- Part 14-2. Semiconductor Hall sensor element;
--- Part 14-3. Semiconductor sensors Pressure sensors;
--- Part 14-4. Semiconductor sensors semiconductor accelerometer;
--- Part 14-5. Semiconductor sensors PN junction semiconductor temperature sensor;
--- Part 15. insulating power semiconductors;
--- Part 16-1. Microwave integrated circuits - Amplifiers;
--- Part 16-2. Microwave integrated circuits frequency prescaler;
--- Part 16-3. Microwave integrated frequency converter;
--- 16-4. Microwave integrated circuit switch;
--- Part 17. Basic and reinforced insulation of magnetic and capacitive coupling.
This section "Semiconductor devices Discrete devices" national standards for Part 2.
This section drafted in accordance with GB/T 1.1-2009 given rules.
This Part replaces GB/T 4023-1997 "Semiconductor devices - Discrete devices and integrated circuits - Part 2. Rectifier diodes."
This part of GB/T 4023-1997 compared to the main changes are as follows.
--- The preparation and adoption of the rules of IEC standard version, with its different levels of consistency. GB/T 4023-1997 is based on GB/T 1.1-
1993, equivalent to IEC 747-2. 1983 and 1992, two in 1993 Rev.; this section is based on GB/T 1.1-
2009 and GB/T 20000.2-2009, identical with IEC 60747-2.2000.
--- Different content structure layout. GB/T 4023-1997 adopted articles (chapter), section, article, item number and "introduction" of a text and edited reg
No; this part chapter, article, item number, "Introduction" in front of the body as an individual, is not programmed reg number.
--- Added "peak current shell is not broken," the text symbols "IRSMC", and the corresponding "shell without breaking I2t" I2t in
To I2RCt, while the "shell is not broken I2RCt" by the power dissipation term bar to bar current term.
--- Increased "(reverse recovery) soft [degrees] factor" conditional terms, definitions, symbols and text property value.
--- Added "forward recovery voltage peak" condition characteristic values.
--- Zhang added text text symbols symbol switching characteristics of 11 symbols and text current four (IFAV, IFRMS, IRM,
IRSMC), remove the IR (AV).
--- Added "requires type test and routine test, the rectifier diode flag" a chapter.
--- Remove the "repetitive peak reverse voltage" another name "maximum reverse voltage is repeated" and related "Notes."
--- Remove Appendix B "transient thermal impedance test method (Quick Test Method)."
This section uses the translation method is equivalent to using IEC 60747-2.2000 "Semiconductor devices - Discrete devices and integrated circuits - Part 2.
Rectifier diode "(in English).
This part made the following editorial changes and corrections.
--- Added "Foreword" to delete the IEC standard "foreword";
--- "IEC 60747 This part of" the "publication" and the "international standard" are replaced by "this section";
--- According to the standard provisions of the actual reference, an increase in the GB/T 2900.66-2004 "Electrotechnical terminology Semiconductor devices and set
Circuit "as normative references;
--- It will be used for current and voltage modifier "continuous (DC)" is replaced by "DC";
--- Indicates the temperature of the text symbols "T" and "θ" two kinds of letters in "T", indicates the temperature of text symbols subscript amb, case,
vj, ref were changed a, c, j, r;
"." --- With a decimal point instead of a comma as the decimal point, "";
--- Unified Numbering of formulas;
--- The "forward (not repeat) surge current" unified "forward surge current", in line with Chapter 3;
--- 5.7.4 in the "reverse repetitive peak current," the text symbol IRM errata to IRRM;
--- Remove 5.8.1 (5.8 lines in the next level of solitary article) number, the corresponding content directly into 5.8;
--- The release formula (A.29) symbol t2 text "repetition rate higher frequency" errata as "repetition rate higher frequency of reciprocal."
This part is proposed by the Ministry of Industry and Information Technology of the People's Republic of China.
This part of the National Standardization Technical Committee of the semiconductor device (SAC/TC78) centralized.
This section is drafted. Xi'an Power Electronics Technology Institute, the state-run eighth seventy-three factory, Hubei LMH Semiconductor Co., Ltd., Zhuzhou
CSR Times Electric Co., Ltd. Power Electronics Division, Zhejiang Power Electronic Co., Ltd. are silicon.
The main drafters of this section. Qin Yin full, Zousheng Lin, Yen St., Liuguo You, the first Shen Liang.
This part of the standard replaces the previous editions are.
--- GB 4023-1983, GB 4023-1986, GB/T 4023-1997.
introduction
This portion of the GB/T 17573-1998 "Semiconductor devices - Discrete devices and integrated circuits - Part 1. General Principles" together.
GB/T 17573 provides the following basic information about the semiconductor device.
---the term;
--- Text symbols;
--- Essential ratings and characteristics;
---Test Methods;
--- Reception and reliability.
Semiconductor devices - Discrete devices and integrated circuits
Part 2. Rectifier diodes
1 Scope
This section presents the following standards of various types of devices or each category.
Rectifier diode comprising.
--- Avalanche rectifier diodes;
--- Controlled avalanche rectifier diodes;
--- Fast switching rectifier diode.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 2900.66-2004 Electrotechnical terminology Semiconductor devices and integrated circuits (IEC 60050-521.2002, IDT)
GB/T 17573-1998 Semiconductor devices - Discrete devices and integrated circuits - Part 1. General (idt IEC 60747-1. 1983)
3 Terms and Definitions
GB/T 17573-1998 and GB/T 2900.66-2004 defined and the following terms and definitions apply to this document.
3.1 General terms
3.1.1
Forward forward direction
DC current flows along the direction of low resistance semiconductor diode.
3.1.2
Reverse reverse direction
DC current flows along the direction of the high resistance of the semiconductor diode.
3.1.3
Anode terminal (semiconductor rectifier diode or rectifier stack) anode terminal (ofasemiconductorrectifierdiodeor
rectifierstack)
Forward current from an external circuit inflow end.
3.1.4
Cathode terminal (semiconductor rectifier diode or rectifier stack) cathode terminal (ofasemiconductorrectifierdiodeor
rectifierstack)
End of the forward current flowing to an external circuit.
3.1.5
Rectifier heap arm rectifier stack arm
Bounded by two end circuits that partially rectified stack having substantially only conduct current in one direction characteristic.
NOTE. rectifier heap arm may contain one or several in series or in parallel or series-parallel rectifier diode, and the work as a whole. This means. rectifier heap
Arm may be all or part of the rectified rectifying heap heap.
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