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GB/T 34481-2017: Test method for measuring etch pit density (EPD) in low dislocation density monocrystalline germanium slices
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 34481-2017 | English | 109 |
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Test method for measuring etch pit density (EPD) in low dislocation density monocrystalline germanium slices
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GB/T 34481-2017
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Basic data | Standard ID | GB/T 34481-2017 (GB/T34481-2017) | | Description (Translated English) | Test method for measuring etch pit density (EPD) in low dislocation density monocrystalline germanium slices | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H25 | | Classification of International Standard | 77.040 | | Word Count Estimation | 5,510 | | Date of Issue | 2017-10-14 | | Date of Implementation | 2018-07-01 | | Regulation (derived from) | National Standard Announcement 2017 No. 26 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | GB/T 34481-2017: Test method for measuring etch pit density (EPD) in low dislocation density monocrystalline germanium slices
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Test method for measuring etch pit density (EPD) in low dislocation density monocrystalline germanium slices
ICS 77.040
H25
National Standards of People's Republic of China
Low Dislocation Density Germanium Single Crystal Etch Pit Density
(EPD) measurement method
Testmethodformeasuringetchpitdensity (EPD) inlowdislocationdensity
2017-10-14 Published
2018-07-01 implementation
General Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
China National Standardization Administration released
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards
Technical Committee Sub-Technical Committee on Materials (SAC/TC203/SC2) co-sponsored and centralized.
This standard was drafted unit. Yunnan Branch Xin Crystal Materials Co., Ltd., Yunnan Lincang Xin Yuan Germanium Co., Ltd., Chinese Academy of Sciences
Body Institute.
The main drafters of this standard. Huifeng, universal Kun, Dong Rukun.
Low Dislocation Density Germanium Single Crystal Etch Pit Density
(EPD) measurement method
1 Scope
This standard specifies the low dislocation density of germanium single crystal etching pit density (EPD) measurement method.
This standard applies to the test dislocation density less than 1000/cm2, a diameter of 75mm ~ 150mm dislocation of the circular germanium single crystal
Corrosion pit density.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version applies to this article
Pieces. For undated references, the latest edition (including all amendments) applies to this document.
GB/T 5252 germanium single crystal dislocation corrosion pit density measurement method
3 method summary
Germanium single-wafer chemical etching method shows dislocation corrosion pits, the microscope can be observed within the field of view the number of corrosion pits. Dislocation corrosion
The pit density is equal to the number of etch pits across the field of view divided by the field of view. Germanium single crystal wafers mainly have 0 °, (100) partial (111) 6 ° and (100) partial
(111) 9 ° three kinds, the dislocation images are shown in Figure 1, Figure 2, Figure 3.
Fig. 1 0 °.200 × Fig. 2 (100) Partial (111) 6 °.200 ×
Figure 3 (100) Partial (111) 9 °.200 ×
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