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GB/T 32282-2015 English PDF

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GB/T 32282-2015: Test method for dislocation density of GaN single crystal -- Cathodoluminescence spectroscopy
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PDF similar to GB/T 32282-2015


Standard similar to GB/T 32282-2015

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Basic data

Standard ID GB/T 32282-2015 (GB/T32282-2015)
Description (Translated English) Test method for dislocation density of GaN single crystal -- Cathodoluminescence spectroscopy
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard H21
Classification of International Standard 77.040
Word Count Estimation 11,122
Date of Issue 2015-12-10
Date of Implementation 2016-11-01
Regulation (derived from) National Standard Announcement 2015 No.38
Issuing agency(ies) General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China

GB/T 32282-2015: Test method for dislocation density of GaN single crystal -- Cathodoluminescence spectroscopy


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Test method for dislocation density of GaN single crystal - Cathodoluminescence spectroscopy ICS 77.040 H21 National Standards of People's Republic of China The gallium nitride single crystal dislocation density measurement Cathode fluorescent microscopy Issued on. 2015-12-10 2016-11-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and National Semiconductor Equipment and Materials Standards Materials Branch of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed. This standard was drafted. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Science and Technology Co., Ltd., Suzhou Navier. The main drafters of this standard. Zeng Xiong Hui, Zhang Yi, Dong Xiaoming, cattle cowboy, Liu Zheng Hui, Qiu Yongxin, Wang Jianfeng, Xu Ke. The gallium nitride single crystal dislocation density measurement Cathode fluorescent microscopy

1 Scope

This standard specifies the method of cathode fluorescence microscopy test gallium nitride single crystal dislocation density. This standard applies to the dislocation density gallium nitride single crystal Ge 1 × 103/cm2 ~ 5 × 108/cm2 or between dislocation density test.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including with amendments) apply to this document. GB/T 1554 crystallographic perfection of silicon by preferential etch test methods GB/T 14264 semiconductor material terms GB/T 27788 micro-beam analysis SEM image magnification calibration Guidelines

3 Terms and Definitions

GB/T 14264 and defined by the following terms and definitions apply to this document. 3.1 Cathode fluorescent cathodoluminescence Luminescence material produces a physical phenomenon in a cathode ray (electron beam) excitation. 3.2 Radiative recombination radiativerecombination Electrons from high energy state to a lower energy state transition process, the released electrons and holes recombine certain energy, energy in the form of photons freed. 3.3 Non-radiative recombination nonradiativerecombination Electrons from high energy state to a lower energy state transition process, the released electrons and holes recombine certain amount of energy to remove energy photon radiation Other forms of external release.

4 Method summary

Typically, the luminescent material samples tested under the electron beam, a variety of signals will be excited, such as a secondary electron signals, backscattered electron signal No, X-ray signal, cathode fluorescent signals. The use of specific detectors respectively receive said signals, can be reflected in the sample phase It should feature images. Cathode fluorescent signal mainly photomultiplier tubes to detect the light signals into electric current, and finally to the image output. Cathode fluorescent contrast images reflect the different regions of the sample luminescence strength. Dislocation gallium nitride single crystal is usually non-radiative recombination centers, and therefore the performance of dark spots on the cathode fluorescent image, a cathode fluorescence microscopy Space mirror up to several tens of nanometers resolution, it is possible to detect a gallium nitride single crystal dislocation density without destroying the sample.

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