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GB/T 32280-2022: Test method for warp and bow of silicon wafers - Automated non-contact scanning method
Status: Valid GB/T 32280: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 32280-2022 | English | 279 |
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Test method for warp and bow of silicon wafers - Automated non-contact scanning method
| Valid |
GB/T 32280-2022
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| GB/T 32280-2015 | English | 479 |
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Test method for warp of silicon wafers -- Automated non-contact scanning method
| Obsolete |
GB/T 32280-2015
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PDF similar to GB/T 32280-2022
Basic data | Standard ID | GB/T 32280-2022 (GB/T32280-2022) | | Description (Translated English) | Test method for warp and bow of silicon wafers - Automated non-contact scanning method | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H21 | | Word Count Estimation | 14,112 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 32280-2022: Test method for warp and bow of silicon wafers - Automated non-contact scanning method
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for warp and bow of silicon wafers - Automated non-contact scanning method
ICS 77.040
CCSH21
National Standards of People's Republic of China
Replacing GB/T 32280-2015
Wafer warpage and curvature testing
Automatic non-contact scanning method
Published on 2022-03-09
2022-10-01 Implementation
State Administration for Market Regulation
Released by the National Standardization Administration
foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules of Standardization Documents"
drafted.
This document replaces GB/T 32280-2015 "Automatic Non-Contact Scanning Method for Wafer Warpage Test", which is consistent with GB/T 32280-2015
In addition to structural adjustments and editorial changes, the main technical changes are as follows.
a) changed the scope (see Chapter 1, Chapter 1 of the.2015 edition);
b) Added the relevant content of "curvature" (see Chapter 1, Chapter 4, Chapter 6, Chapter 9, Chapter 10);
c) added the term "reference sheet" (see 3.2);
d) The probe sensor size of 2mm×2mm is added (see 7.3);
e) Removed the reference piece for calibration (see 8.2 of the.2015 edition).
Please note that some content of this document may be patented. The issuing agency of this document assumes no responsibility for identifying patents.
This document is jointly developed by the National Standardization Technical Committee for Semiconductor Equipment and Materials (SAC/TC203) and the National Standard for Semiconductor Equipment and Materials
The material sub-technical committee (SAC/TC203/SC2) of the Chemical Technology Committee jointly proposed and managed it.
This document is drafted by. Youyan Semiconductor Silicon Materials Co., Ltd., Shandong Youyan Semiconductor Materials Co., Ltd., Hefei Zhongnan Optoelectronics Co., Ltd.
Company, Zhejiang Jinruihong Technology Co., Ltd., Luoyang Hongtai Semiconductor Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., Shanghai Hejing Silicon
Materials Co., Ltd., Kaihua County Inspection and Testing Research Institute, Tianjin Zhonghuan Leading Materials Technology Co., Ltd., Yiwu Limai New Materials Co., Ltd.
Company, Nonferrous Metals Technology and Economic Research Institute Co., Ltd.
The main drafters of this document. Sun Yan, Cai Liyan, He Dongjiang, Li Suqing, Wang Kesheng, Xu Xinhua, Zhang Haiying, Wang Zhenguo, Pan Jinping, Cao Yan,
Lou Chunlan, Zhang Xuenan, Pi Kunlin.
This document was first published in.2015 and this is the first revision.
Wafer warpage and curvature testing
Automatic non-contact scanning method
1 Scope
This document describes a method for testing the warpage and curvature of silicon wafers by automated non-contact scanning of the wafer surface using two probes.
This document applies to clean and dry silicon wafers with a diameter of not less than 50mm and a thickness of not less than 100μm, including cutting, grinding, etching,
Polished, epitaxial, etched or other surface states of silicon wafers can also be used for warpage and other semiconductor wafers such as gallium arsenide, silicon carbide, sapphire, etc.
Bending test.
2 Normative references
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, dated citations
documents, only the version corresponding to that date applies to this document; for undated references, the latest edition (including all amendments) applies to
this document.
GB/T 6619 silicon wafer bending test method
GB/T 6620 Non-contact test method for warpage of silicon wafers
GB/T 14264 Terms of Semiconductor Materials
GB/T 16596 Specification for determining wafer coordinate system
3 Terms and Definitions
The terms and definitions defined in GB/T 14264 and the following apply to this document.
3.1
typical piece representativewafer
Gravity-corrected wafers with the same nominal diameter, nominal thickness, fiducial structure and crystallographic orientation as the measured wafers
representative wafers.
3.2
Reference film referencewafer
Wafers marked with warp and bow parameter values used to determine compliance with the repeatability requirements of the test equipment operating instructions.
NOTE. Parameter values are average values obtained through a large number of repeated tests using test equipment, or statistical values based on equipment repeatability studies.
3.3
warp
The difference between the maximum and minimum distances of a free, unclamped wafer midplane relative to the reference plane within the qualified area.
3.4
Bow
The offset between the center point of the free unclamped wafer midplane and the midplane reference plane.
NOTE. The midplane datum is a plane determined by three equidistant points on the circumference of a designated diameter smaller than the nominal diameter of the wafer.
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