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Std ID |
Description (Standard Title) |
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GB 6218-1986
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Blank detail specification for bipolar transistors for switching applications
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GB 4586-1984
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Measuring methods for field-effect transistors
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GB 9494-1988
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Detail specification for electronic component--Ambient-rated silicon rectifier diode for type 2CZ321
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GB 9495-1988
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Detail specification for electronic component--Ambient-rated silicon rectifier diode for type 2CZ322
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GB 9496-1988
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Detail specification for electronic component--Ambient-rated silicon rectifier diode for type 2CZ33
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GB 9497-1988
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Detail specification for electronic component--Ambient-rated silicon rectifier diode for type 2CZ323
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GB 9498-1988
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Detail specification for electronic component--Ambient-rated silicon rectifier diode for type 2CZ34Q
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GB 9503-1988
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Detail specification for electronic components--Reverse blocking triode thyristorcase-rated for type 3CT320
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GB 9504-1988
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Detail specification for electronic components--Avalanche triode thyristor case-rated for type 3CT315
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GB 9514-1988
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Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD 203
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GB 9523-1988
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Detail specification for electronic component--Silicon single phase bridge rectifier type for QL 62
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GB 8558-1987
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Silicon switching rectifier diode for type 2CN31D
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GB 4023-1986
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Semiconductor discrete devices--Part 2: Rectifier diodes
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GB 6259-1986
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Detail specification for electronic components Silicon fast-switching rectifier diode for type 2CN41
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GB 10271-1988
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Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG162
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GB 10272-1988
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Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG182
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GB 10273-1988
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Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG140
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GB 10279-1988
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Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG3130
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GB 9500-1988
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Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG107
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GB 9507-1988
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Detail specification for electronic components--Ambient-rated transistor for type 3CG844 silicon PNP for high frequency amplification
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GB 9508-1988
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Detail specification for electronic components--Ambient-rated transistor for type 3CG778 silicon PNP for high frequency amplification
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GB 9509-1988
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Detail specification for electronic components--Ambient-rated transistor for type 3CG778 silicon PNP for high frequency amplification
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GB 9510-1988
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Detail specification for electronic components--Ambient-rated transistor for type 3DG2271 silicon NPN for high frequency amplification
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GB 9511-1988
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Detail specification for electronic components--Case-rated transistor for type 3DD401 silicon NPN for low frequency amplification
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GB 9512-1988
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Detail specification for electronic components--Case-rated transistor for type 3CD546 silicon PNP for low frequency amplification
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GB 9513-1988
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Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD100C
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GB 9515-1988
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Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD205A
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GB 9516-1988
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Detail specification for electronic components high-frequency amplification transistor for silicon NPN ambient-rated for type 3DG 2636
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GB 9517-1988
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Detail specification for electronic components high-frequency amplification transistor for silicon NPN ambient-rated for type 3DG3077
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GB 9518-1988
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Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD204
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GB 9519-1988
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Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD207
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GB 9520-1988
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Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD207
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GB 9521-1988
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(Detailed specifications of electronic components. 3DD325 silicon NPN. Environmental rated low frequency amplifying transistor (for certification))
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GB 9522-1988
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Detail specification for electronic components--Ambie-nt-rated transistor for type 3DG1815 silicon NPN for high frequency amplification
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GB 7147-1987
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Detail specification for electronic components--Ambint-rated bipolar transistors for high frequency amplification type 3DG80
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GB 7148-1987
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Detail specification for electronic components--Single-gate junction type field-effect transistors of types CS111, CS112, CS113, CS114, CS115, CS116
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GB 7149-1987
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Detail specification for electronic components--Bipolar transistors for switching amplification types 3DK105A, 3DK105B
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GB 7150-1987
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Detail specification for electronic components--Bipolar transistors for switching amplification types 3DK107A, 3DK107B
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GB 7151-1987
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Detail specification for electronic components--Ambient-rated bipolar transistors for high-frequency amplification type 3DG131A, 3DG131B, 3DG131C
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GB 7577-1987
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Blank detail specification for case-rated bipolar transistors for low-frequency amplification
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GB 7578-1987
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Detail specification for electronic component--Case-rated bipolar transistor for types 3DA150B, 3DA150C for high-frequency amplification
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GB 7579-1987
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Detail specification for electronic component--Case-rated bipolar transistor for type 3DD201 for low-frequency amplification
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GB 7580-1987
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Detail specification for electronic components--Case-rated bipolar transistors for low-frequency amplification, type 3DD102B
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GB 6353-1986
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Detail specification for electronic component--Forward AGC low-noise transistor for high-frequency amplification--Type 3 DG79
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GB 6354-1986
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Glass passivated high voltage rectifier silicon stack for types 2CL24, 2CL25, 2CL27 and 2CL29
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GB 6355-1986
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Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3CG21B, 3CG21C
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GB 6356-1986
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Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3CX201A, 3CX201B, 3CX201C
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GB 6357-1986
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Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3DX201A, 3DX201B, 3DX201C
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GB 4587-1984
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Measuring methods for bipolar transistors
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GB 9499-1988
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Detail specification for electronic component silicon switching diode for type 2CK120
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GB 9524-1988
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Detail specification for electronic component--Silicon switching diodes for types 2CK111 2CK112 and 2CK113
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GB 9525-1988
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Detail specification for electronic component--Silicon switching diodes for types 2CK111 2CK112 and 2CK113
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GB 9526-1988
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Detail specification for electronic component--Silicon turing variable capacitance diodes for types 2CC22 and 2CC27
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GB 9527-1988
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Detail specification for electronic component--Silicon turing variable capacitance diodes for types 2cc23 and 2cc28
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GB 9528-1988
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Detail specification for electronic component--Silicon frequency modulated variable capacitance diodes for types 2CC24 and 2CC29
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GB 9529-1988
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Detail specification for electronic component--Silicon frequency modulated variable capacitance diodes for types 2CC24 and 2CC29
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GB 9595-1988
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Detail specification for electronic component--Semiconductor integrated circuit--cw574cs voltage stabilizer for electronic tuner
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GB 9596-1988
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(Detailed specifications of electronic components. 2CW380 ~ 411 silicon diode voltage regulator (for certification))
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GB 7152-1987
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Detail specification for electronic components--Switching rectifier diodes for types 2CZ201, 2CZ202 and 2CZ203
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GB 6571-1986
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Measuring methods for low-power signal diodes, voltage reference diodes and voltage regulator diodes
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GB 6802-1986
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Detail specification for electronic component--Glass passivated high voltage rectifier silicon stack for types 2CL61, 2CL62, 2CL63, 2CL64, 2CL65, 2CL66, 2CL67, 2CL68
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GB/Z 20283-2006
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Information security technology -- Guide for the production of Protection Profiles and Security Targets, NEQ
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GB 11499-1989
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Letter symbols for discrete semiconductor devices
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GB 6801-1986
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Reference methods of measurement for semiconductor devices
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GB 4937-1985
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Mechanical and climatic test methods for discrete semiconductor devices
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GB 8555-1987
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Variable ceramic vacuum capacitors of type CKTB 400/7. 5/60
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GB 6428-1986
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Methods of the measurement for hydrogen thyratron tubes
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GB 3213-1982
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Methods of measurement of thyratrons and gas-filled rectifier tubes
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GB 27701-2011
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Mechanical safety of cathode ray tubes
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GB 11484-1989
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Dimensions of reference gauges for cathode-ray tubes
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GB 11485-1989
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Preparation of outline drawings of cathode-ray tubes
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GB 9365-1988
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Performance requirements for camera tube yoke assemblies
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GB 9366-1988
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Performance requirements for camera tube yoke assemblies
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GB 9585-1988
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(Cathode ray tube electrostatic deflection pole naming)
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GB 8556-1987
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Defect criteria in useful screen area for cathode ray tubes
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GB 8557-1987
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Inspection standards for glass bulbs for cathode ray tubes
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GB 5998-1986
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Methods of measurement of colour picture tubes
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GB 6267-1986
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Detail specification for electronic components--Colour picture tube of type 37SX101Y22-DC01
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GB 6268-1986
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Detail specification for electronic components--Colour picture tube of type 56SX101Y22-DC03
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GB 6585-1986
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Test method for general purpose cathode-ray oscilloscopes
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GB 6586-1986
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Specification of general purpose cathode-ray oscilloscopes
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GB 7018-1986
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Detail specification for electronic component--Black-and-white picture tube of type 35SX 5B
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GB 3790-1983
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Methods of measurement of fluorescent display tubes
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GB 9042-1988
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Specification for type EY501 power travelling wave tube
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GB 9043-1988
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General technical requirements of gas discharge tubes for the over-voltage protection of telecommunications installations
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GB 4777-1984
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Colour codes for wire leads of microwave devices
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GB 11448-1989
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Detail specification for electronic components electronic tube of type FC-306
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GB 11488-1989
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Detail specification for electronic components--Electronic tube of type FU-250F
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GB 11489-1989
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Detail specification for electronic components--Electronic tube of type FU-100F
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GB 7273.1-1987
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Measurement of the electrical properties of disk-seal tubes--General
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GB 7273.2-1987
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Measurements of the electrical properties of disk-seal tubes--Measuring methods of the frequency-response characteristic
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GB 7273.3-1987
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Measurements of the electrical properties of disk-seal tubes--Measuring methods of the frequency position
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GB 7273.4-1987
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Measurements of the electrical properties of disk-seal tubes--Measuring methods of resonator unloaded Q
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GB 7273.5-1987
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Measurements of the electrical properties of disk-seal tubes--Measuring methods of self-neutralization frequency
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GB 7273.6-1987
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Measurements of the electrical properties of disk-seal tubes--Measuring methods of the power gain
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GB 7273.7-1987
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Measurements of the electrical properties of disk-seal tubes--Measuring methods of AM-PM conversion coefficient
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GB 7273.8-1987
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Measurements of the electrical properties of disk-seal tubes--Measuring methods of three tone inter-modulation distortion
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GB 11032-1989
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Metal oxide surge arresters without gaps for a. c. systems
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GB 11486-1989
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Measuring methods of the heater or filament current and voltage for electronic tubes
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GB 1956-1989
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The type designation for electron tubes
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