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YS/T 839-2012: Test method for measurement of insulator thickness and refractive index on silicon substrates by ellipsometry
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Test method for measurement of insulator thickness and refractive index on silicon substrates by ellipsometry
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YS/T 839-2012
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Basic data | Standard ID | YS/T 839-2012 (YS/T839-2012) | | Description (Translated English) | Test method for measurement of insulator thickness and refractive index on silicon substrates by ellipsometry | | Sector / Industry | Nonferrous Metallurgy Industry Standard (Recommended) | | Classification of Chinese Standard | H68 | | Classification of International Standard | 77.120.99 | | Word Count Estimation | 11,169 | | Regulation (derived from) | Ministry of Industry and Information Technology Bulletin No. 55 of 2012; industry standard filing Notice 2013 No. 1 (Total No. 157); | | Issuing agency(ies) | Ministry of Industry and Information Technology | | Summary | This standard specifies test methods using ellipsometry measurements grown or deposited on the silicon substrate insulator film thickness and refractive index method. This standard applies to no absorption wavelength of the test film and the substrate on | YS/T 839-2012: Test method for measurement of insulator thickness and refractive index on silicon substrates by ellipsometry
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Test method for measurement of insulator thickness and refractive index on silicon substrates by ellipsometry
ICS 77.120.99
H68
People's Republic of China Nonferrous Metals Industry Standard
An insulator film on a silicon substrate thickness and refractive index
Elliptically polarized test method
Issued on. 2012-11-07
2013-03-01 implementation
Ministry of Industry and Information Technology of the People's Republic of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
This standard by the national non-ferrous metals Standardization Technical Committee (SAC/TC243) centralized.
This standard was drafted. China Institute of Metrology, there is research semiconductor material Co., Semi Leber Trading (Shanghai) Co.,
the company.
The main drafters of this standard. Gao Ying, Wu Bin, Sun Yan, Xu Jiping, Xuzi Liang, Huang Li.
An insulator film on a silicon substrate thickness and refractive index
Elliptically polarized test method
1 Scope
1.1 The method specifies the insulator film thickness measured by ellipsometry Test grown or deposited on the silicon substrate and the refractive index
method.
1.2 test method is applicable to the film and the substrate without absorption wavelength of the light-wavelength testing, and it is known to test the substrate at a wavelength of refraction
Measuring the insulator film thickness and refractive index and extinction coefficient. For non-insulator film, when certain conditions are met before the present
method.
2 Method summary
2.1 Instrument assembly shown in Figure 1. Since the light emitted from the monochromator after the polarizer is converted to linearly polarized light.
2.2 compensator set the angle -45 ° (or 315 °), the linearly polarized light into elliptically polarized light. In to see the beam incident surface (Looking
A light source), the counterclockwise direction as a positive direction.
2.3 degree azimuth and polarization ellipse is determined by the incident light polarizer and compensator setting.
2.4 After the incident sample reflection, azimuth and polarization ellipse of change. System by alternating polarizer and analyzer is provided
Position, light incident on the sample surface is elliptically polarized reflected light to linearly polarized light, the detector is adjusted to extinction.
2.5 insulator film thickness and refractive index by hand or by means of a graphic method Accompanying software calculated.
2.6 Non-insulating film having a certain thickness, refractive index and extinction coefficient, only when the reflected light measured meets the measuring signal
When the requirements of the instrument before measurement.
3 disturbances
If there is contamination on the external surface of the sample 3.1, erroneous measurement results will be given.
3.2 in the spot diameter and comparable scope, if the substrate is uneven, the insulator film thickness is uneven, uneven distribution of the refractive index, can be
Accuracy can not achieve complete extinction, the measurement results will be reduced.
3.3 If the insulator film is part of the test wavelength of light absorbed or scattered, it may not be the only solution.
3.4 If a graphic method in the calculation, when the angle of phase change (Δ, phase changes ejΔ) between 140 ° ~ 180 ° or amplitude change
Angle [Ψ, amplitude changes tanΨ] is between 11.6 ° ~ 14 °, the measurement accuracy will be reduced.
4 measuring instruments
4.1 Source. multicolor lamp with a collimator or a monochromator, or a laser, monochrome collimated light beam to generate a designated test wavelength.
4.2 polarizer. a birefringent crystal, is used to produce unpolarized source of monochromatic light is converted to linearly polarized light. The crystals need to be rotated, and security
Mounted on the positioning accuracy of ± 0.1 ° reach the round dial.
4.3 analyzer. a birefringent crystal, and from a similar partial structure and installed in a similar manner.
4.4 compensation. birefringent plate, a transmittance (Tc) and the phase delay (Delta] c) are known, for linearly polarized light into elliptically polarized light, mounted
Positioning accuracy of ± reach the circular dial of 0.1 °.
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