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YS/T 679-2018: Test methods for minority carrier diffusion length in extrinsic semiconductors. Surface photovoltage method
Status: Valid YS/T 679: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| YS/T 679-2018 | English | 599 |
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Test methods for minority carrier diffusion length in extrinsic semiconductors. Surface photovoltage method
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YS/T 679-2018
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| YS/T 679-2008 | English | 599 |
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Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-state surface photovoltage
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YS/T 679-2008
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PDF similar to YS/T 679-2018
Basic data | Standard ID | YS/T 679-2018 (YS/T679-2018) | | Description (Translated English) | Test methods for minority carrier diffusion length in extrinsic semiconductors. Surface photovoltage method | | Sector / Industry | Nonferrous Metallurgy Industry Standard (Recommended) | | Classification of Chinese Standard | H21 | | Classification of International Standard | 77.040 | | Word Count Estimation | 26,293 | | Date of Issue | 2018-10-22 | | Date of Implementation | 2019-04-01 | | Older Standard (superseded by this standard) | YS/T 679-2008 | | Regulation (derived from) | Ministry of Industry and Information Technology Announcement No.54 of 2018 | | Issuing agency(ies) | Ministry of Industry and Information Technology | | Summary | This standard specifies the test method for minority carrier diffusion length in extrinsic semiconductor materials, including steady state photovoltage method, constant luminous flux method and digital oscilloscope recording method. This standard applies to extrinsic semiconductor materials, such as silicon single-wafer or minority-type carrier diffusion in a homogenous epitaxial layer of known resistivity deposited on a reductive substrate of the same conductivity type, test sample (epitaxial) The thickness of the layer) is greater than 4 times the diffusion length. The limits of resistivity and carrier lifetime of this standard can be tested, but P-type and N-type silicon samples with resistivity of 0.1 ����cm to 50 ����cm and carrier lifetime as short as 2 ns have been tested. . This standard can also calculate the iron content in silicon by testing the diffusion length. | YS/T 679-2008: Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-state surface photovoltage
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-state surface photovoltage
ICS 29.045
H80
People's Republic of China Nonferrous Metals Industry Standard
Extrinsic semiconductor in the minority carrier diffusion length
Test Method for Steady surface photovoltage
Posted 2008-03-12
2008-09-01 implementation
National Development and Reform Commission issued
Foreword
The revised standard steady-state surface photovoltage measured SEMIMF391-1106 "extrinsic semiconductor in the minority carrier diffusion length
Test Methods. "
The standards are compared with SEMIMF391-1106 major changes as follows.
--- According to a standard format GB/T 1.1 Requirements choreography;
--- Note the SEMIMF391-1106 in part is converted to text;
--- The SEMIMF391-1106 part of the contents of the arrangement.
This standard by the National Standardization Technical Committee of non-ferrous metals and centralized.
This standard by Grinm Semiconductor Materials Co., Ltd. is responsible for drafting.
The main drafters of this standard. Sun Yan, Lu Liyan, Du Juan, Li Junfeng, Difu Yi.
Extrinsic semiconductor in the minority carrier diffusion length
Test Method for Steady surface photovoltage
1 Scope
1.1 This standard applies to non-intrinsic monocrystalline semiconductor material or samples of the same conductivity type heavily doped substrate resistivity homogeneous deposition known outside
Epitaxial layer minority carrier diffusion length measurements. It requires that the sample or the epitaxial layer thickness is greater than 4 times the diffusion length.
1.2 This standard is applied to the sample and the development of single-crystal silicon, it can be used to measure other semiconductors such as gallium arsenide (while adjusting the corresponding light
Between the effective diffusion length and evaluation process for preparing grains wavelength (energy) range and samples) on perpendicular bound to have on the surface of the polycrystalline sample
Effect diffusion length. This standard can also be used for measuring the width of the silicon wafer clean areas.
1.3 This standard limits the application of the sample resistivity and life has not been determined, but has been successful on resistivity (0.1 ~ 50) Ω · cm, contained
Short carrier lifetime to p and n-type silicon sample 2ns were measured. The diffusion length standard measurement only into the next room at 22 ℃ ± 0.5 ℃
OK, lifetime and diffusion length is a function of temperature.
NOTE. This standard does not address safety issues, if any, associated with the use of standards. Standard before use, to establish appropriate safety and security measures and the development of tube
Li limit the scope of application is the standard user's responsibility.
2 Normative references
The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent
Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research
Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard.
GB/T 1552 silicon germanium crystal measuring resistivity inline four-probe method
GB/T 1553 germanium and silicon minority carrier lifetime measurement of photoconductivity decay method
GB/T 6616 resistivity of semiconductor silicon and silicon thin film sheet resistance measuring non-contact eddy current method
GB/T 6618 wafer thickness and total thickness variation of test methods
GB/T 11446.1 Electronic grade water
GB/T 14264 semiconductor material terms
GB/T 14847 heavily doped lightly doped silicon epitaxial layer on the substrate thickness infrared reflectance measurement method
3 Methods Summary
This standard is based on the surface energy of the incident light as a voltage measurement (wavelength) of the function.
This standard describes two test methods, two methods are non-destructive.
Test Method 1 --- steady surface photovoltage (CMSPV) method.
Test Method 2 --- linear voltage steady light photon flux (LPVCPF) method.
3.1 Method 1 --- with energy slightly larger than the surface of the semiconductor sample chopper monochromatic light band gap of the sample. And generate electron-hole pairs
Spread to the surface of the sample, electron-hole pairs by the electric field of the depletion region to be separated, resulting in surface photovoltage (SPV). Depletion region may be formed of surfaces
State, the surface potential barrier, p-n junction or a liquid junction is formed. SPV signal is capacitively coupled or connected directly to a lock-in amplifier to amplify and measure
the amount. All light energy range adjust the light intensity to get the same SPV value. For each choice of energy from the energy intensity of the absorption coefficient
Reciprocal plot. The resulting linear outer push to zero intensity at the negative value of the intercept is the effective diffusion length. The use of the detector signal is fed back to
A light source, and a stepping motor is equipped with a monochromator to automate measurements.
3.2 Method 2 --- first at two different photon flux measuring surface photovoltage generated by the white light chopper to ensure the photon
SPV is the linear flux, then, under the monochrome generating a set of narrow band filters in a linear SPV range and constant photon flux
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