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Database: 189760 (18 Oct 2025)
SJ/T 1830-2016 English PDF
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SJ/T 1830-2016
: (Semiconductor discrete device 3DK101 silicon NPN low power switching transistor detailed specification)
Status: Valid
SJ/T 1830: Evolution and historical versions
Standard ID
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Standard Title (Description)
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SJ/T 1830-2016
English
279
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(Semiconductor discrete device 3DK101 silicon NPN low power switching transistor detailed specification)
Valid
SJ/T 1830-2016
SJ 1830-1981
English
279
Add to Cart
3 days [Need to translate]
Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK101
Obsolete
SJ 1830-1981
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Basic data
Standard ID
SJ/T 1830-2016 (SJ/T1830-2016)
Description (Translated English)
(Semiconductor discrete device 3DK101 silicon NPN low power switching transistor detailed specification)
Sector / Industry
Electronics Industry Standard (Recommended)
Classification of Chinese Standard
L42
Word Count Estimation
12,199
Date of Issue
2016-04-05
Date of Implementation
2016-09-01
Older Standard (superseded by this standard)
SJ 1830-1981
Regulation (derived from)
The Ministry of Industry and Notice No. 2016 in 2016; industry standard record announcement 2016 No. 7 (total 199)
Issuing agency(ies)
Ministry of Industry and Information Technology
Summary
This standard specifies the external dimensions, maximum ratings and electrical characteristics, test conditions and inspection requirements of the 3DK101 type NPN device.